8V2 850 Search Results

8v2 850

Contextual Info: BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

Contextual Info: B ZT03D Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

Contextual Info: Vishay Telefunken v is h a y Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539

ic 85600

Abstract: 0 258 007 351
Contextual Info: BZT03D. VISHAY Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9 5?9 Medium power voltage regulators and medium power transient suppression circuits

0 258 007 351

Contextual Info: Tem ic BZT03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power

1N007

Abstract: fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005
Contextual Info: FAGQR ELECTRONICS 57E D WÊ 3 ^ 3 2 5 Q000LS3 T31 « F G R S CROSS REFERENCE COMPETITIVE SERIES COMPETITOR FAGOR SERIES 1 5SKE 8 2 - 1 5KE 300 1 SKE 8 2 A -1 5KE 300 A THOM/CS1/MOT/GI THOM/GSI/MOT/GI 1 SKE 8 2 C -1 5KE 300 C 1 5SE 12 - 1 SSE 300 1 5SE 12 A • 1 5SE 300 A

BZTO3-C

Abstract: bzto3c BZTO3
Contextual Info: Te m ic BZT03C. TELEFU N K EN Semiconductors Silicon Z-Diodes Features • G lass passivated junction • H erm etically sealed package • C lam ping tim e in p icosecon d s Applications M edium pow er voltage regulators and medium pow er transient suppression circuits

Contextual Info: v tS H A Y _BZT03D— ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and

BZT03C

Contextual Info: BZT03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

ZT03C

Abstract: bzt03c
Contextual Info: vS ü y ▼ BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium

BZT03D

Contextual Info: BZT03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits

Telefunken tk 19

Abstract: BZT03C
Contextual Info: BZT03C. Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539

BZT03D

Contextual Info: BZT03D. TELEFUNKEN Semiconductors Silicon Z–Diodes Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539 Absolute Maximum Ratings

BZT03D

Contextual Info: BZT03D. Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539

BZV85

Abstract: BZV85Cxx "Voltage Regulator Diodes" 5V6 DIODE BZV85-C3V6 BZV85-C75 JTP 141
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product data sheet Supersedes data of 1996 Apr 26 1999 May 11 NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series FEATURES DESCRIPTION • Total power dissipation:

120V ZENER

Abstract: 160V zener diode 5C transistor 6V2 Zener Diode BZX15c5v1 bzx15c8v2 bzx15c15v 5c75v
Contextual Info: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Power Dissipation Ptot Junction Temperature 1.5 TS Unit 1) W 175 O -65 to +175 O Tj Storage Temperature Range 1) Value C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

160V zener diode

Abstract: 5C transistor 6V2 Zener Diode 5c75v
Contextual Info: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Power Dissipation Ptot Junction Temperature 1.5 TS Unit 1) W 175 O -65 to +175 O Tj Storage Temperature Range 1) Value C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Contextual Info: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.

Contextual Info: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

5C transistor

Abstract: 6V2 Zener Diode ZM15C
Contextual Info: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Cathode band Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.

5C transistor

Abstract: 6V2 Zener Diode
Contextual Info: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.

5C transistor

Abstract: 6V2 Zener Diode zener 5v6
Contextual Info: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.

diode zener 6V8 BZX C 55

Abstract: diode zener 6v2 BZX bzx 4v7 ZENER DIODE bzx 3V9 ZENER DIODE diode zener 9v1 BZX diode zener 8v2 BZX bzx 8v2 ZENER DIODE diode zener bzx 55 c 15 diode zener 6V2 BZX C 55 bxz55
Contextual Info: CE BZX55-C0V8 THRU BZX55-C200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES FEATURES . The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request. MECHANICAL DATA . Case: DO-35 glass case

Zener Diode BZx 84

Abstract: BZX 12v IN4728A diode zener 6V8 BZX C 55 in4742a BZX 12v zener diode in4756a IN4739A IN4738A IN4733A
Contextual Info: （package）:DO-35 Zener Voltage Range 1 Dynamic resistance Reverse Leakage Current TYPE BZX 55/C 0V8 BZX 55/C 2V0 BZX 55/C 2V4 BZX 55/C 2V7 BZX 55/C 3V0 BZX 55/C 3V3 BZX 55/C 3V6 BZX 55/C 3V9 BZX 55/C 4V3 BZX 55/C 4V7 BZX 55/C 5V1 BZX 55/C 5V6 BZX 55/C 6V2