8Q TRANSISTOR Search Results

Contextual Info: SIEMENS BSS 159 Preliminary data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type BSS 159 ^DS 50 V b 0.16 A ^DS on 8Q Package Ordering Code SOT-23 Q67000-S321 Maximum Ratings Parameter Symbol Drain source voltage

SMD SOT23 XC

Abstract: smd transistor marking code XC
Contextual Info: BSS 159 I n fin e o n technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type Vbs to RDS on Package Marking Ordering Code BSS 159 50V 0.16 A 8Q SOT-23 SEs Q67000-S321 Maximum Ratings

Contextual Info: SIEMENS BSP 88 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.6.1.2V Type Id 0.32 A BSP 88 VDS 240 V Type BSP 88 Ordering Code Q67000-S070 flbS(on) Package Marking 8Q SOT-223 BSP 88 Tape and Reel Information

VN1304N2

Abstract: VN1306N2 VN1310N3
Contextual Info: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A

ncc7

Abstract: 8Q transistor PDIP20 TDA7480
Contextual Info: -, SGS-THOMSON TDA7480 k7 # . RfflDtgœHILIÊ'înSORÔDtgS 10W MONO CLASS-D AMPLIFIER PRO DU CT PREVIEW • 10W OUTPUT POWER: R l = 8Q, THD = 10% ■ HIGH EFFICIENCY . NO HEATSINK ■ SPLIT SUPPLY . OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION

VP0106N2

Abstract: VP01A VP0109ND
Contextual Info: 0 Supertex inc. /p \ ^ VP 01A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDss1 Order Number / Package RdS ON *D(ON| b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8£2 8Q 8a -0.5A VP0104N2 VP0104N9 VP0104N3

ADG201BP

Abstract: ADG201-series ADG201CJ ADG201AP DG201 314S adg201c ADG201 adg201b
Contextual Info: ANALOG DEVICES DI CMOS Protected Quad SPST Analog Switch FEATURES Latch-Proof Dl CM OS Overvoltage Proof to 25V Beyond Supplies Superior DG201 Replacement Break-Before Make Switching Action Low R o n : 8QÌ2 Low Power Dissipation: 30mW max Direct T T L or CM OS Interfacing

VP0106N5

Abstract: VP0104N5 VP0109N2 VP0109N5 VP0104N2 VP0106N2 VP0109N9 cmo60 VP0109ND vp0106N3
Contextual Info: _ =JJJi — _ — " ^ VP0104 VP0106 VPQ 1Q Q ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Q -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5

VN1304N2

Abstract: VN1306N2
Contextual Info: VN1304 S u p e r t e x in e . v n i soe VN1310 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices bv dss/ Order Number / Package ^ DS ON I d (ON) b v dgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A — VN1304N2

Contextual Info: h a r r is H I-524/8Q 3 4 Channel Wideband Multiplexer August 1988 Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The H I-5 24/8 83 is a four channel CMOS analog

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . \MQfgœniLiCTffiti 0 1 T DA7482 25W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 25W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . W IDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION

Contextual Info: SGS-1H0 MS0 N 57. \M Q ^©[llL[E©TO [iìQO©Ì T DA 7481 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 18W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION

Contextual Info: & à S u p e r te x in c VN1304 VN1306 VN1310 . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) B V dgs (max) (min) 40V 8Q 0.5A 60V 8Ü 0.5A 100V an 0.5A Order Number / Package TO-243AA* TO-39 TO-92 — VN1304N2

Contextual Info: SGS-1H 0 M S 0 N 5 7 . \MQ ^©[llL[E©TO [iìQO©Ì T DA7480 1OW MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 10W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . NO HEATSINK ■ SPLIT SUPPLY . OVERVOLTAGE PROTECTION ■ S T-BY A N D MUTE FEATURES

stk4216mk10

Abstract: Transformer MG-200 8Q transistor STK4216 MG-200
Contextual Info: STK4216MK10 Thick Film Hybrid IC 2-Channel AF Power Amp TENTATIVE C ase O u tlin e : 22 pins See attached case outline drawing. F u n ctio n : 2-channel AF power amp U s e : 70W audio use F e a tu re : Low-load (2Q to 8fl) use, on-chip m uting transistor

2sc536

Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
Contextual Info: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK444

Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C

2076M

Abstract: NJM2076
Contextual Info: DUAL LOW VOLTAGE P O W E R AMPLIFIER NJM2076 The NJM2076 is a dual pow er am plifier, which operates with l.OV minimum supply voltage. The NJM2076 is suitable to small radio and head-phone of stereo and single BTL application. • Package Outline Features

Contextual Info: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG

STK4231II

Abstract: STK4231 for power supply STK4231 stk4231 ll STK4231 II tagl2 8Q transistor 100 100w stereo amplifier 8c 617 transistor DBA40C
Contextual Info: Ordering number: EN 2307 Thick Film Hybrid IC No.2307 S T K 4 2 3 1 II 2-Channel 1Û0W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­

12J60

Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Contextual Info: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices

STK4231

Abstract: STK4231II STK4231II power amplifier stereo STK4231 for power supply 8Q transistor 8c 617 transistor STK4231 II DBA40C MG-200 STK4201II
Contextual Info: Ordering number: EN 2307 Thick Film Hybrid IC S T K 4 2 3 1 II 2-Channel 100W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­