8Q TRANSISTOR Search Results

VN1304N2

Abstract: VN1306N2 VN1310N3
Contextual Info: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A

VP0106N2

Abstract: VP01A VP0109ND
Contextual Info: 0 Supertex inc. /p \ ^ VP 01A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDss1 Order Number / Package RdS ON *D(ON| b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8£2 8Q 8a -0.5A VP0104N2 VP0104N9 VP0104N3

ADG201BP

Abstract: ADG201-series ADG201CJ ADG201AP DG201 314S adg201c ADG201 adg201b
Contextual Info: ANALOG DEVICES DI CMOS Protected Quad SPST Analog Switch FEATURES Latch-Proof Dl CM OS Overvoltage Proof to 25V Beyond Supplies Superior DG201 Replacement Break-Before Make Switching Action Low R o n : 8QÌ2 Low Power Dissipation: 30mW max Direct T T L or CM OS Interfacing

VP0106N5

Abstract: VP0104N5 VP0109N2 VP0109N5 VP0104N2 VP0106N2 VP0109N9 cmo60 VP0109ND vp0106N3
Contextual Info: _ =JJJi — _ — " ^ VP0104 VP0106 VPQ 1Q Q ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package b v dss/ ^DS ON ^D(ON) b v dgs (max) (min) TO-39 TO-52 TO-92 TO-220 -40V 8Q -0.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5

VN1304N2

Abstract: VN1306N2
Contextual Info: VN1304 S u p e r t e x in e . v n i soe VN1310 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices bv dss/ Order Number / Package ^ DS ON I d (ON) b v dgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A — VN1304N2

Contextual Info: h a r r is H I-524/8Q 3 4 Channel Wideband Multiplexer August 1988 Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The H I-5 24/8 83 is a four channel CMOS analog

Contextual Info: S G S -1 H 0 M S 0 N 5 7 . \MQfgœniLiCTffiti 0 1 T DA7482 25W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 25W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . W IDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION

Contextual Info: SGS-1H0 MS0 N 57. \M Q ^©[llL[E©TO [iìQO©Ì T DA 7481 18W MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 18W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . WIDE SUPPLY VOLTAGE RANGE UP TO ±25V . SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION

Contextual Info: & à S u p e r te x in c VN1304 VN1306 VN1310 . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) B V dgs (max) (min) 40V 8Q 0.5A 60V 8Ü 0.5A 100V an 0.5A Order Number / Package TO-243AA* TO-39 TO-92 — VN1304N2

Contextual Info: SGS-1H 0 M S 0 N 5 7 . \MQ ^©[llL[E©TO [iìQO©Ì T DA7480 1OW MONO CLASS-D AMPLIFIER PR O D U C T PREVIEW • 10W OUTPUT POWER: R l = 8Q./4Q.\ THD = 10% ■ HIGH EFFICIENCY . NO HEATSINK ■ SPLIT SUPPLY . OVERVOLTAGE PROTECTION ■ S T-BY A N D MUTE FEATURES

2SC536

Abstract: D612K b632k 2sc1175 D612 2SB632 2SB632K 341G 2SD438 B632
Contextual Info: Ordering n u m b e r:EN341G 2SB632,632K/2SD612,612K N 0.34 IG PNP/NPN Epitaxial Planar Silicon Transistors SAW O 25V/35V, 2A Low-Frequency Power Amp Applications F e a tu re s • High collector dissipation and wide ASO. : 2SB632,632K A b solute M axim um R atin g s a t Ta = 25°C

stk4216mk10

Abstract: Transformer MG-200 8Q transistor STK4216 MG-200
Contextual Info: STK4216MK10 Thick Film Hybrid IC 2-Channel AF Power Amp TENTATIVE C ase O u tlin e : 22 pins See attached case outline drawing. F u n ctio n : 2-channel AF power amp U s e : 70W audio use F e a tu re : Low-load (2Q to 8fl) use, on-chip m uting transistor

Contextual Info: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C

Contextual Info: 2N3055A m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T03 U 4J MAXIMUM RATINGS 7.0 A VCE p 1 DISS T 60 V .65 5 -675 115 W @ T c = 25°C -65 °C to +200 °C "^"sTG

12J60

Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Contextual Info: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices

STK4231

Abstract: STK4231II STK4231II power amplifier stereo STK4231 for power supply 8Q transistor 8c 617 transistor STK4231 II DBA40C MG-200 STK4201II
Contextual Info: Ordering number: EN 2307 Thick Film Hybrid IC S T K 4 2 3 1 II 2-Channel 100W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­

Contextual Info: DUAL LOW VOLTAGE POWER AMPLIFIER NJM2076 The NJM2076 is a dual power amplifier, which operates with I.OV minimum supply voltage. The NJM2076 is suitable to small radio and head-phone of stereo and single BTL application. Package Outline • Features • BTL operation Po =90mW type.

MG25N6EK1

Abstract: ij98
Contextual Info: MG25N6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. Unit in mm 13.5 13.5 . 6 Power Transistors and 6 Free Wheeling Tolerance is ± Q 5 m m unless Diodes are Built Into 1 Package.

NTE74HC393

Abstract: NTE74LS393 NTE74393 NTE74LS386 NTE74HC390 o2-a2 NTE74LS390 NTE74S387 NTE74HC377 Dual D-type flip-flop
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74376 16-Lead D IP, See Diag. 249 Quadruple J-K Flip-Flop 20-Lead DIP, See Diag. 294 NTE74HC377, NTE74LS377 Octal D-Type Flip-Flop w/Common Enable W/Ck>ck & Single Rail Outputs Enable G u NTE74LS378

CIRCUIT DIAGRAM audio Amplifier USING LM386

Abstract: LM386 PIN DIAGRAM LM386 audio amplifiers lm386 LM386 oscillator LM386 PIN DIAGRAM IN pin diagram of LM386 LM386A LM386 speaker Ultrasonic amplifier schematic circuit
Contextual Info: ISemiconductor LM386 Low Voltage Audio Power Amplifier T he inputs are ground referenced w hile the o u tput is r T "'h e L M 386 is a pow er am plifier designed for use in autom atically biased low voltage consum er applications. The gain is to one h a lf

STK4392 circuit

Abstract: STK4392 supply stk4392 STK4392 output STK4392 ic equivalent amplifier 15w 8Q transistor stk4392 applications 1231C RP22
Contextual Info: rdering number: EN 1231C Thick Film Hybrid IC STK4392 AF Power Amplifier 15W + 15W min,THD = 1.0%) Features Package Dimensions • Small and slim package with 31mm height. • Capable of guaranteeing substrate temperature 125°C, thereby reducing heat sink.

Contextual Info: H m www S M lC ITßSQ uil « » mm W « w «UPI W « 1^0 Commerce Drive Afxfx Montgomeryville, PA 18936-1013 Tel: {215 631-3840 o n « o U 1 4 U U ” d> RF & MICROWAVE TRANSiSTORS 9Q0-960MHZ CLASS C, BASE STATIONS G LA S S C T R A N S IS T O R FREQUENCY

2SB948A

Abstract: 2SD1445 2SD1445A
Contextual Info: Power Transistors 2SD1445, 2SD1445A 2SD1445, 2SD1445A Silicon NPN Epitaxial Planar Type Package D im ensions Pow er A m plifier Power Sw itching Low V oltage Sw itching C om plem enta ry Pair w ith 2SB 948A U n it ! mm 4 .4 m a x . 2 .9 m a x , • Features

Contextual Info: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bfc,S3^31 0014366 1 ■ BUZ11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies