8N50PM Search Results

Contextual Info: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A Ω ≤ 0.8 ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

IXTP8N50PM

Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C

Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 4 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

8N50PM

Abstract: 8N50P
Contextual Info: Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET IXFP 8N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500 V = 4.4 A ≤ 0.8 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches