8MBIT EEPROM Search Results
8MBIT EEPROM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| X28C512DM-15/B | Rochester Electronics LLC | X28C512 - EEPROM, 64KX8, Parallel, CMOS |
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| X28C010FI-15 | Rochester Electronics LLC | X28C010 - EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32 |
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| X28C512JI-15 | Rochester Electronics LLC | X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32 |
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| X28C512DM-15 | Rochester Electronics LLC | X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32 |
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| X28C512JI-12 | Rochester Electronics LLC | X28C512 - EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32 |
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8MBIT EEPROM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FM23MLD16
Abstract: 3.3v 1Mx8 static ram high speed
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fm23mld16512kx1633mhzc8556953bg1+2 | |
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Contextual Info: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process |
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fm23mld16512kx1633mhzc8556953bg1+1 | |
8Mbit FRAMContextual Info: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz |
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fm23mld16512kx1633mhzc8556953bg1+2 | |
FM23MLD16-60-BG
Abstract: FM23MLD16 fm23mld16-60 fm23mld1660bg 3.3v 1Mx8 static ram high speed
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fm23mld16512kx1633mhzc8556953bg1+4 | |
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Contextual Info: FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process |
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fm23mld16512kx1633mhzc8556953bg1+1 | |
LH28F800BJHE-PTTLT6Contextual Info: PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PTTLT6 Flash Memory 8Mbit 512Kbitx16 / 1Mbitx8 (Model Number: LHF80JT6) Spec. Issue Date: October 26, 2004 Spec No: EL16192 LHF80JT6 ●Handle this document carefully for it contains material protected by international copyright law. |
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lh28f800bjhe-pttlt6512kbitx16lhf80jt6el16192 | |
LH28F800BJHE-PBTLT9Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law. |
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lh28f800bjhe-pbtlt9lhf80jt9el16x081 | |
ICE Technology glv32
Abstract: GLV32 27C010 27C040 27C256 27C512 29F040 Speedmaster LV speedmaster
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glv3232-pin27c512glv-32+9 | |
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Contextual Info: HANBit HMN1M8DV Non-Volatile SRAM MODULE 8Mbit 1024k x 8bit 36Pin – DIP, 3.3V Part No. HMN1M8DV GENERAL DESCRIPTION The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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1024k36pin608-bit120ns+1 | |
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Contextual Info: HANBit HMN1M8D Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 36Pin-DIP, 5V Part No. HMN1M8D GENERAL DESCRIPTION The HMN1M8D Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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36pin-dip608-bit120ns150ns | |
40-PIN-DIPContextual Info: HANBit HMN1M8DN Non-Volatile SRAM MODULE 8Mbit 1,024K X 8-Bit , 40Pin-DIP, 5V Part No. HMN1M8DN GENERAL DESCRIPTION The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write |
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40pin-dip608-bit40-pin-dip | |
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Contextual Info: HANBit HMN1M8DVN Non-Volatile SRAM MODULE 8Mbit 1024k x 8bit 40Pin – DIP, 3.3V Part No. HMN1M8DVN GENERAL DESCRIPTION The HMN1M8DVN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DVN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited |
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1024k40pin608-bit120ns+1 | |
SmartDie
Abstract: 28F800 272819 transistor 2201 1024Kx8
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28f800bv/ce512kx161024kx8x8/x16-selectable+8 | |
8 bit sequential multiplier VERILOG
Abstract: ATMEGA 32 AVR DATASHEET data sheet of AT89c52 microcontroller rfid based 8 bit microprocessor using vhdl interface bluetooth with AVR ATMEGA 16 interface bluetooth with AVR atmel isp attiny atmega Tiny 84 pin plcc ic base ic at89c51
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at90s120020-pinat90s2313at90s2323+12 | |
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Contextual Info: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V |
OCR Scan |
28f800bv/ce512kx161024kx8x8/x16-selectable+6 | |
28F400BV-TContextual Info: INTEL PRODUCTS INTEL High Integration Boot Block 2-, 4- and 8-Mbit Family with SmartVoltage Technology • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2-, 4- and 8-Mbit x8 or ×8/×16 JEDEC-standard configuration Footprint upgradable from 2-Mbit through 8-Mbit |
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28f400bv-t | |
28F800
Abstract: intel pa28f800
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1024k28f800bv-t/b28f800cv-t/b28f008bv-t/b+8 | |
28F800
Abstract: 29053 te28f800cvt90 intel pa28f800
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28f800bv-t/b28f800cv-t/b28f008bv-t/b28f800ce-t/b+9 | |
intel 28F400
Abstract: flash bios chip 28 pin intel 28F200 PA28F200 28F400
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x8/x16110nspa28f200do15/a1+8 | |
28F800
Abstract: 28f800 errata intel pa28f800
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1024k28f800bv-t/b28f800cv-t/b28f008bv-t/b+8 | |
28F800Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B n n n n n n n Intel SmartVoltage Technology 5 V or 12 V Program/Erase 2.7 V, 3.3 V or 5 V Read Operation |
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28f800bv-t/b28f800cv-t/b28f008bv-t/b28f800ce-t/b+6 | |
28F800
Abstract: CE3150 SRAM TTL 1024K x 8 t90 series 28F008BE-T 28F008BV-T 28F800BV-T 28F800CE-T 28F800CV-T TE28F800
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1024k28f800bv-t28f800cv-t28f008bv-t+11 | |
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Contextual Info: PRELIMINARY in te l 8-MBIT 512K X 1 6 ,1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B Extended Temperature Operation 40°C to +85°C Intel SmartVoltage Technology — 5V or 12V Program/Erase |
OCR Scan |
1024k28f800bv-t/b28f800cv-t/b28f008bv-t/b+6 | |
3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
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hb56u132hb56h132hb56u232hb56h232+16 | |