8A05 Search Results

8A10

Abstract: 8a100 8A60 8A20 8A80 8A05 8A40
Contextual Info: CURRENT 8.0 Amperes VOLTAGE 50 to 1000 Volts 8A05 THRU 8A100 Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 · High forward current capability · High surge current capability · Construction utilizes void-free molded plastic technique

8A10

Abstract: 8A05 8AF05
Contextual Info: GLASS PASSIVATED RECTIFIER 8A05 THRU 8A10 VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Ampere TO-220AC FEATURES • • • • • • • • Glass passivated chip junction Low power loss, high efficiency Low Leakage High current capacity, high surge capacity

Contextual Info: 8A05 thru 8A10 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes PLASTIC SILICON RECTIFIERS R-6 FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current .052 1.3 .048(1.2) DIA 1.0(25.4) MIN ● High current capability

8A10

Abstract: 8A05
Contextual Info: 8A05 thru 8A10 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes PLASTIC SILICON RECTIFIERS R-6 FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current .052 1.3 .048(1.2) DIA 1.0(25.4) MIN ● High current capability

Contextual Info: 8A05-8A10 Plastic Silicon Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 8.0 A R-6 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0

germanium transistor asy

Abstract: 18y4 ASY48 21 k 1564 y703
Contextual Info: ESC D • Û235b05 00040Û7 r - 37 - 0 7 b H SIE6 ASY48 ASY70 PNP Transistors for Switching Applications - SIEMENS A K T IE N G E S E LL S C H A F Not for new design A S Y 48 and A S Y 70 are alloyed germanium PN P transistors in 1 A 3 DIN 41871 case

1N4004S

Abstract: 8a100 1N4001S 1N4002S 1N4003S 1N4005S 1N4006S RL101 RL102 RL103
Contextual Info: LEADED THRU-HOLE General Purpose Rectifiers, 1 to 8 Amps GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) RF Cross Max Avg. Peak Peak Fwd Surge Max Forward Max Reverse Part Number Reference Rectified Inverse Current @ 8.3ms Voltage @ 25°C Current @ 25°C

R5F56218BNFP

Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SF8A01-G

Contextual Info: Glass Passivated Super Fast Recovery Rectifier SF8A01-G THRU SF8A06-G Voltage Range 50 to 600 V Current 8.0 Ampere Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability

SF8A01F

Contextual Info: SF8A01F THRU SF8A06F Glass Passivated Super Fast Recovery Rectifier Voltage Range 50 to 600 V Current 8.0 Ampere ITO-220AC .185 4.70 .175(4.44) MAX.412(10.5) DIA .140(3.56) .130(3.30) .140(3.56) .130(3.30) .594(15.1) .587(14.9) PIN .108(2.75) .098(2.50) 2

Contextual Info: CMOS CSI 0.5 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE 7/14/2010 Device MIC2003 1.2YM5 MIC2004 0.8YM5 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005M 0.8YM5 MIC2005M 0.5YM6 MIC2005 0.5BM6 MIC2006 1.2BM6 MIC2007 YM6 MIC2007 YM6

34BD5

Contextual Info: BCD2 - BIPOLAR CMOS DMOS 2u OPERATING LIFE @ TA = +125C AT RATED VOLTAGE Family USB Power Distribution Switch Qty Act Hrs +5.5V 116 168 SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC +5.5V +5.5V +5.5V +5.5V +5.5V +5.5V +5.5V +5.5V +5.5V +5.5V

TPCP8A05-H

Contextual Info: 8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H 8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A

Contextual Info: 8A05-H ショットキバリアダイオード内蔵電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅤ-H 8A05-H ○ 高効率 DC-DC コンバータ用 ○ ノートブック PC 用 ○ 携帯電子機器用 Unit: mm 0.33±0.05

8A03

Abstract: 8A02 8A05
Contextual Info: EF8A02 THRU EF8A06 Glass Passivated Super Fast Recovery Rectifier Voltage Range 100 to 600 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability

Contextual Info: EF8A02F THRU EF8A06F Glass Passivated Super Fast Recovery Rectifier Voltage Range 100 to 600 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability

TPCP8A05-H

Contextual Info: 8A05-H ショットキバリアダイオード内蔵電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅤ-H 8A05-H ○ 高効率 DC-DC コンバータ用 ○ ノートブック PC 用 ○ 携帯電子機器用 Unit: mm 0.33±0.05

1N4004S

Abstract: 8a100 1N4001S 1N4002S 1N4003S 1N4005S 1N4006S RL101 RL102 RL103
Contextual Info: LEADED THRU-HOLE General Purpose Rectifiers, 1 to 8 Amps GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) RF Cross Max Avg. Peak Peak Fwd Surge Max Forward Max Reverse Part Number Reference Rectified Inverse Current @ 8.3ms Voltage @ 25°C Current @ 25°C

Contextual Info: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 5 4 3 2 PUBLICATION RIGHTS LOC RESERVED. ES BY TYCO ELECTRONICS CORPORATION. D IS T R E V IS IO N S 00 LTR D E SC RIPTIO N DATE DWN APVD I.E REVISED PER F B 0 0 -0 2 4 6 -0 4 210CT04 L.Z

Contextual Info: e h S a t a D LEADED (THRU-HOLE General Purpose Rectifiers, 1 to 8 Amps GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) RF Cross Max Avg. Peak Peak Fwd Surge Max Forward Max Reverse Part Number Reference Rectified Inverse Current @ 8.3ms Voltage @ 25°C Current @ 25°C

UF8A01-G

Abstract: UF8A05-G
Contextual Info: Glass Passivated Ultra Fast Recovery Rectifier UF8A01-G THRU 8A05-G Voltage Range 50 to 600 V Current 8.0 Ampere TO-220AC MAX.412 10.5 .154(3.91) .06(1.52) .05(1.27) .148(3.74) .16(4.06) .14(3.56) DIA .594(15.1) .587(14.9) PIN 2 MAX.05(1.5) 1 .037(0.94)

FR8A01F-G

Abstract: FR8A07F-G 8A02F
Contextual Info: Glass Passivated Fast Recovery Rectifier FR8A01F-G THRU FR8A07F-G Voltage Range 50 to 1000 V Current 8.0 Ampere Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability

Contextual Info: DatasheetDatasheet RX62N Group, RX621 Group R01DS0052EJ0140 Rev.1.40 2014.07.16 Renesas MCUs 100 MHz 32-bit RX MCU with FPU, 165 DMIPS, up to 512-Kbyte Flash, Ethernet, USB 2.0 Full-Speed Host/Function/OTG, CAN, 12-bit ADC, TFT-LCD, RTC, up to 14 communication channels

UDC 1200

Abstract: TA 8275h 4019 data TTL 1980 131-6 bj 028 BCM 2836 RX62N 16-1-223 resistor DTC 164213 STPA2
Contextual Info: User’s Manual 32 Cover RX62N Group, RX621 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,