8A SF SC 10 Search Results

12a h3 fuse

Abstract: 12a h3 sc sf SFH-1412 12ah4 7A SF SFH-1412A SFH-1212A 12a g1 battery fuse SFH-1212 5A SF
Contextual Info: Est. 1997/12/10 Rev.20 2002/11/27 SC Protector Self Control Protector Innovative way of safety control for Li-ion rechargeable battery At any moment, SC Protector system monitors the voltage of Li-ion rechargeable battery and its heater fuses the fuse at the same instant when the system detects the overcharge. Usual protection element

Contextual Info: PRELIMINARY MICRON 256K X MT 43C4257A/8A 4 TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (SDB-3) SCb 1 40 Vss 39 SDOb4 3 38 SD Qb3 4 37 SËb 5 36 MKD 6 35 SD Qa4 SD Q a2 C 7 34 SD Qa3 8 33 SËa 9

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

L9230

Abstract: L9230-DIE1 SO20 "Stepper Motors" 8A SF diode MO166
Contextual Info: L9230 SPI CONTROLLED H-BRIDGE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE 5V TO 28V TYPICAL RDSon = 150 mΩ FOR EACH OUTPUT TRANSISTOR AT 25°C CONTINOUS DC LOAD CURRENT 5A (Tcase < 100 °C) OUTPUT CURRENT LIMITATION AT TYP. 6.6 A±

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

7A SF SC 30

Abstract: ESX10-103 uP 6308 AD ESX10 SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30
Contextual Info: Electronic Circuit Protector ESX10 Description Electronic circuit protector type ESX10 is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that

L9230

Abstract: L9230-DIE1 SO20 MO-166
Contextual Info: L9230 SPI CONTROLLED H-BRIDGE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ OPERATING SUPPLY VOLTAGE 5V TO 28V TYPICAL RDSon = 150 mΩ FOR EACH OUTPUT TRANSISTOR AT 25°C CONTINOUS DC LOAD CURRENT 5A (Tcase < 100 °C) OUTPUT CURRENT LIMITATION AT TYP. 6A

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

Contextual Info: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits

SRT9

Abstract: osam marking code 4258A MT43C MT43C425
Contextual Info: PRELIMINARY l^ iic n o N 256K X MT43C 4257A/8A 4 T R IP LE -P O R T DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible w ith 1 Meg VRAM

mt43c4257adj7

Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Contextual Info: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM

Contextual Info: TOSHIBA 2SK2542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2542 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10.3MAX. g3.6 ±0.2 4V Gate Drive Low Drain-Sorce ON Resistance : RDS(ON = 0-75ß (Typ.)

Contextual Info: EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING ENG. NO S D -5 10 1 0 -* * 1* CJl ft3-r *hr 3£ 2ft i* 5 jC. S* r+i g c5 vi m - vj - a TIM SM z3 SM 22.4 ~n 85 12.4 v*_,SC 7 J- a i iv> t i l gm s mLf ; m 3*1 zo an m zdM S5 E# sa 0 -c^ cn ro CaJ i# ^3 UKe

CIRCUIT BREAKER AEG me 800

Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
Contextual Info: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.

ESX10-TA-100

Abstract: dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars
Contextual Info: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by

AD-TX-EM01

Abstract: ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549
Contextual Info: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by

TC524258AZ

Contextual Info: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits

AD-TX-EM01

Abstract: ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367
Contextual Info: Electronic Circuit Protector ESX10-T.-DC 24 V Description Electronic circuit protector type ESX10-T is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that

Contextual Info: TOSHIBA {DIS CR ET E/ OPT O} I 9097 25 0 TOSHIBA ¿/oihihi TD DISCRETE/OPTO DE | Ì G ^ S S O GGlb37b 1 90D 16376 D 2 S K 5 6 8 " T- SEMICONDUCTOR M G 8 G A G H 1 TECHNICAL DATA M G 8 G 6 E M 1 7 po­ -o w lli ò o Irl Irl ]►¡1 X O O 00 o as Irl Irl 1 1

Contextual Info: MICRON TECHNOLOGY INC bOE D • L111SMT OOObTBb S5T ■ URN SUPERSEDED BY MT43C4257A/8A M in P H M I ^ MT43C4257/8 256K X 4 TRIPLE-PORT DRAM TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512 X 4 SAMS FEATURES P IN A S S IG N M E N T (T op V ie w ) PIN ASSIGNMENT

RH-12V

Abstract: 2SK1083-MR
Contextual Info: 2SK1083-M R FUJI P O W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F -III S E R I E S Outline Drawings I Features H gh current Le w on-resistance No secondary breakdown Low driving power High forward Transconductance lApplications Motor controllers G îneral purpose power amplifier

MT43C4257ADJ-7

Contextual Info: b l l l S M T OOIOOL j? 3Tfi • URN IU |C Z R O N I MT43C4257A/8 A 256K x 4 TRIPLE-PORT DRAM SEW iCOhD'JCTOa INC. TRIPLE-PORT DRAM 256K x 4 DRAM WITH DUAL 51 2 x 4 SAMS FEATURES • • • • • • • • Three asynchronous, independent, data-access ports

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

Contextual Info: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [