8TQ080 Search Results

40HFL40S02

Abstract: 8TQ080S 8TQ100S IRFP460 VS-8TQ100 VS-8TQ100SPBF
Contextual Info: VS-8TQ080SPbF, VS-8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • • • • Base cathode 2 • D2PAK 3 Anode 1 N/C • • • 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

D2PAK-6

Abstract: IRFP460 40HFL40S02 8TQ100S
Contextual Info: 8TQ080SPbF, 8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: 8TQ080 /S 8TQ100 /S SANGDEST MICROELECTRONICS Technical Data Data Sheet N0639, Rev. - Green Products 8TQ080/S/ 8TQ100/S SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection

40HFL40S02

Abstract: 8TQ100GS IRFP460
Contextual Info: 8TQ080GSPbF, 8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-8TQ080GSPbF, VS-8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • • • • Base cathode 2 • D2PAK 3 Anode 1 N/C • • • • PRODUCT SUMMARY 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-8TQ080SPbF, VS-8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • • • • Base cathode 2 • D2PAK 3 Anode 1 N/C • • • 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-8TQ080SHM3, VS-8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical

40HFL40S02

Abstract: 8TQ080 8TQ100 IRFP460 pd223
Contextual Info: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-244-58 8TQ080 sch diodTO-220AC 70-244-74 8TQ100 sch diodTO-220AC PD-2.238 rev. A 12/97 8TQ. SERIES SCHOTTKY RECTIFIER

VS-8TQ100GSPBF

Abstract: 40HFL40S02 8TQ080GS 8TQ100GS IRFP460
Contextual Info: VS-8TQ080GSPbF, VS-8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • • • • Base cathode 2 • D2PAK 3 Anode 1 N/C • • • • PRODUCT SUMMARY 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-8TQ080SPbF, VS-8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES • • • • Base cathode 2 • D2PAK 3 Anode 1 N/C • • • 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: Bulletin PD-21041 rev. B 06/06 8TQ.SPbF 8 Amp SCHOTTKY RECTIFIER IF AV = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 8 A 80 - 100 V IFSM @ tp = 5 s sine 850 A VF @ 8 Apk, TJ = 125°C

Contextual Info: Bulletin PD-21041 05/05 8TQ.SPbF 8 Amp SCHOTTKY RECTIFIER IF AV = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 8 A 80 - 100 V IFSM @ tp = 5 µs sine 850 A VF @ 8 Apk, TJ = 125°C

11CTQ050

Abstract: 9CTQ040 11CTQ040 80SG045 11CTQ060 D0204AR 18TQ030 11CTQ030 30CTQ030 11CTQ090
Contextual Info: INTE RNA TIONAL R E C T I F I E R HE D | 4355455 □010020 fi Schottky Rectifiers T ~ ?>-£ o li 5.0 TO 30 AMPS !F AV TC VRWM VFH @ «FM (A) !RM @ Tj — 125°C & Rated VRWM Max. Tj (V) (A) 5QSQ10Q 60 80 90 100 5 5 5 5 92 92 92 92 0.52 0.52 0.52 0.52 13

IRF 850

Abstract: cat 7105 02 diode case R-1 40HF 8TQ080G 8TQ100 8TQ100G P460
Contextual Info: Bulletin PD-20686 rev. A 01/06 8TQ.G 8 Amp SCHOTTKY RECTIFIER IF AV = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular 8 A 80 - 100 V waveform VRRM range IFSM @ tp = 5 µs sine 850

Contextual Info: SINGLE-DIE INTERNATIONAL. RECTIFIER - INTERNATIONAL RECTIFIER 2bE D • 4ÔSS4SS QDlQfaSM 5 ■ SINGLE-DIE AXIAL LEAD Pari VRWM Number !F{AV 180« ta rect V A 110Q03 30 1.1 11DQ04 40 11DQ05 °c V FM ® T j = 100°C T j max 'RM ' fsm ) Bulletin ' f m = l F(AV)

40HF

Abstract: 8TQ100 P460
Contextual Info: Bulletin PD-20862 rev. A 01/06 8TQ.PbF Series 8 Amp SCHOTTKY RECTIFIER IF AV = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 8 A 80 - 100 V waveform VRRM range IFSM @ tp = 5 µs sine

8TQ080

Abstract: MBR1080 MBR1090 MBR780 MS1008 MS1009
Contextual Info: 10 Amp Schottky Barrier Rectifiers S1008, MS1009 •c Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes ■B .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P Base Cathode J. ■tJi - .500 .190 .014 .080 .028 .045 .415 .055

8A80

Abstract: 40HF 8TQ100 8TQ100S P460 SMD-220
Contextual Info: Bulletin PD-21041 rev. B 06/06 8TQ.SPbF 8 Amp SCHOTTKY RECTIFIER IF AV = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 8 A 80 - 100 V IFSM @ tp = 5 s sine 850 A VF @ 8 Apk, TJ = 125°C

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —