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    Maxim Integrated Products MAX38902EVKIT#

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    DigiKey MAX38902EVKIT# Box 2 1
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    Tripp Lite SB58902ETG

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    Tripp Lite SB58902EAL

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    Maxim Integrated Products MAX38902EATA+

    IC REG LINEAR POS ADJ 8TDFN
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    Maxim Integrated Products MAX8902EVKIT+

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    DigiKey MAX8902EVKIT+ Box 21
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    8902E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI8407DB

    Abstract: 8902E Si8902EDB
    Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB 8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 8902EDB T2 Device on Tape Orientation 8902E


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    Si8407DB Si8902EDB 275-mm 8902E 8902E PDF

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304 PDF

    8902E

    Abstract: J-STD-020A Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04 PDF

    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A PDF

    Si8902EDB

    Abstract: J-STD-020A
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 8902E 8902E 11-Mar-11 PDF

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Contextual Info: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


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    Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET


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    Si8902EDB 8902E 8902E 18-Jul-08 PDF

    Contextual Info: 8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03 PDF

    Si8902EDB

    Abstract: Si8902EDB-T2-E1
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 11-Mar-11 Si8902EDB-T2-E1 PDF