880L Search Results

OD-880LJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LJ ANODE CASE .015 • High reliability LPE GaAlAs IRLEDs .209 .220 • High power output • 880nm peak emission .183 .152 .186 .156 • Hermetically sealed TO-46 package .100 • MIL-S-19500 screening available

Contextual Info: HI-REL GaAIAs IR EMITTERS OD-880LJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available • No internal coatings All surfaces are gold plated. Dimensions are nominal

OD-880L

Abstract: ODD-45W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

OD-880LJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LJ ANODE CASE .015 • High reliability LPE GaAlAs IRLEDs .209 .212 • High power output • 880nm peak emission • Hermetically sealed TO-46 package .183 .152 .186 .156 .100 • MIL-S-19500 screening available

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS OD-880LHT FEATURES 1.00 MIN. GLASS DOME • Extended operating temperature range ANODE CASE .209 .220 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .186 .156 All surfaces are gold plated. Dimensions are nominal

OD-880L

Abstract: ODD-45W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .015 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

photoelectric detector

Abstract: infrared detectors infrared diode infrared emitters and detectors OD-880L PDI-E807
Contextual Info: PHOTONIC DETECTORS INC. High-Power GaAIAs Infrared Emitters Peak Wavelength, 880 nm,Type PDI-E807 PACKAGE DIMENSIONS inch mm CL 0.175 [4.45] 45° 0.040 [1.02] 0.145 [3.68] INDUSTRY EQUIVALENT OD-880L 1.00 [25.4] MIN CL 0.146 [3.71] 0.029 [0.74] Ø0.019 [0.48]

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .186 .156 .100 .041 .017 .024

OD-880LJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LJ ANODE CASE • High reliability LPE GaAlAs IRLEDs .209 .212 .015 • High power output • 880nm peak emission • Hermetically sealed TO-46 package .183 .152 .186 .156 .100 • MIL-S-19500 screening available

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LHT ANODE CASE .015 • Extended operating temperature range • No internal coatings .209 .220 • No derating or heat sink required to 80°C .100 .041 All surfaces are gold plated. Dimensions are nominal

Contextual Info: HIGH-POWER GaAIAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Medium emission angle for best coverage/power

IR Emitters

Abstract: IR Diode
Contextual Info: OD-880L HIGH-POWER GaAIAs IR EMITTERS FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission for optimum matching with silicon detectors • Wide range of linear power output

ODD-45W

Abstract: OD-880L
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

OD-880LHT

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LHT ANODE CASE .015 • Extended operating temperature range .209 .212 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .186 .156 .100 .041 .017 .024

IR Emitters

Contextual Info: HIGH TEMPERATURE GaAIAs IR EMITTERS OD-880LHT FEATURES • Extended operating temperature range • High reliability eutectic preform die attach • No internal coatings • 100% test for minimum power requirement • Uses OD- 88O-C chip All surfaces are gold plated. All dimensions are nominal

Contextual Info: HIGH TEMPERATURE GaAIAs IR EMITTERS OD-880LHT FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. W indow

OD-880L

Abstract: ODD-45W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE CASE .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

Contextual Info: HI-REL GaAIAs IR EMITTERS GLASS DOME OD-880LJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output .143 .150 • 880nm peak emission .i_ •017 -[• - 1.00 MIN. I • Hermetically sealed TO-46 package • MIL-S-19500 screening available

OD-880LHT

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LHT ANODE CASE .015 • Extended operating temperature range .209 .220 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .186 .156 .100 .041 .017 .024

OD-880LJ

Contextual Info: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880LJ ANODE CASE .015 • High reliability LPE GaAlAs IRLEDs .209 .220 • High power output • 880nm peak emission .183 .152 .186 .156 • Hermetically sealed TO-46 package .100 • MIL-S-19500 screening available

Contextual Info: MBR870L - MBR8100L 8.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

ir led 940 nm 1 w

Abstract: 660 880 940 led IR LED 940 nm spo2 spo2 specifications spo2 features 895nm emitter 660 880 940 dual-emitter DUAL-EMITTER MATCHING-PHOTODET
Contextual Info: DUAL EMITTER / MATCHING PHOTODETECTOR SERIES MOLDED LEAD FRAME AND LEADLESS CERAMIC SUBSTRATE APPLICATIONS FEATURES • SPO2 • Blood Analysis • Medical Instrumentaion • Ratiometric Instruments The Dual LED series consist of a 660 nm red LED and a companion IR

SPEC-883

Abstract: ld 33v GS880L32T-100 e1 3887
Contextual Info: Preliminary 880L32T-100 256K x 32 8Mb Sync Burst SRAMs 100 Pin TQFP Commercial Temp Industrial Temp 100Mhz 3.3V VDD 3.3V & 2.5V I/O Features Flow Through / Pipeline Reads • FT pin for user configurable flow through or pipelined operation. • Single Cycle Deselect SCD Operation

2760-RB

Abstract: 1784-T47 1771-DA Allen-Bradley bulletin 705 x3.28-1976 corn level sensor circuit diagram ASD 810 CT SENSOR SGI-1 1784T50
Contextual Info: important User information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. “Application Considerations for Solid-State Controls” Publication SGI-1.1 describes some important differences between solid-state