88-108 MHZ POWER AMPLIFIER W Search Results

300w class ab amplifier

Abstract: 88-108 an power 88-108 mhz RPAP88108M700 300w amplifier power amplifier 88-108
Contextual Info: RPAP88108M700 Preliminary Solid State Broadband High Power Pallet Amplifier 88-108 MHz, 700W The RPAP88108M700 is a Class C Pallet Amplifier providing 700 Watts CW Power output. This pallet features MOSFET Transistors and is matched for 50-ohms input and output.

88-108 rf amplifier

Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
Contextual Info: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

inductor vk200

Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

neosid* 10k

Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

blf578

Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
Contextual Info: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power

4cx20000d-9015

Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
Contextual Info: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The

4cx20000d-9015

Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an

Pallet VHF Power Amplifier TELEVISION

Abstract: Pallet VHF Power Amplifier AV600 LDU400C-R Tower Mounted Amplifiers Communications tower LDU300-R LDU300 Pallet UHF Power Amplifier LDU601C
Contextual Info: LNA & Power Amplifier Selection Guide LNA & Power Amplifiers Richardson Electronics’ RF and Microwave Communications Group designs, tests and markets low noise amplifiers, amplifier pallets, amplifier modules and rack mount amplifiers used in Digital Broadcast DVB-T , Communications, Military Wireless Infrastructure

js 1088

Abstract: hyper BAND TV TUNER pin TUA2007X all mosfet vhf power amplifier FA-MT afvh l718a siemens TUA oszillator TUA2007
Contextual Info: SIEMENS Preliminary Data Sheet TUA 2007 X VHF/UHF-Tuner IC This integrated circuit permits the design of TV tuners covering the entire frequency range from 48.860 MHz with a division into 3 bands. Application All tuners in TV- and VCR-sets Features: • Combined UHF /Hyperband / VHF-Tuner-IC

C2071

Abstract: SDA 3202-3 Siemens ofw k682 MOSFET OFWG K68A ofw m 1958 oszillator k682 BB515B
Contextual Info: Preliminary Data Sheet SIEMENS TUA 2007 X VHF/UHF-Tuner IC This integrated circuit permits the design of TV tuners covering the entire frequency range from 48.860 MHz with a division into 3 bands. Application All tuners in TV- and VCR-sets Features: • Combined UHF /Hyperband /VHF-Tuner-IC

Contextual Info: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and

BGY133

Abstract: BGY132 PHILIPS 108 CAPACITOR Amplifier Modules VHF Amplifier Chip "Amplifier Modules" vHF amplifier module BGV132
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEATURES DESCRIPTION • Broadband VHF amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element

BGY36

Abstract: BGY32 BGY33 BGY35 an power amplifier 108 mhz
Contextual Info: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers DESCRIPTION PIN • 18 W output power 1 RF input • Direct operation from 12 V vehicle electrical systems.

BGY133

Abstract: BGY132 dcn4
Contextual Info: Philips Semiconductors Product specification VHF amplifier modules BGY132; BGY133 FEA TUR ES D ES C R IPTIO N • Broadband V H F amplifiers The BGY132 and BGY133 are two stage amplifier modules. Each module comprises two NPN silicon planar transistor chips together with lumped-element

vHF amplifier module

Abstract: BGY33 BGy36A
Contextual Info: J BGY32 BGY33 BGY35 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices will produce 18 W output into a 50 Î Î load.

d1047

Abstract: BGY33 d1047* Transistor BGY36 88-108 rf amplifier vHF amplifier module capacitor polyester philips BGY32 BGY35 68-88MHz
Contextual Info: Philips Semiconductors Product specification BGY32; BGY33; BGY35; BGY36 VHF power amplifier modules PINNING - SOT132B FEATURESS • Broadband VHF amplifiers PIN • 18 W output power • Direct operation from 1 2 V vehicle electrical systems. APPLICATIONS

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

fx1115

Abstract: vHF amplifier module RF POWER TRANSISTOR NPN vhf rf amplifier module VHF Amplifier Chip power rf
Contextual Info: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145A PINNING -SOT183A The BGV145Aisa RF amplifier module, designed for use in transminers of mobile communications equipment powered by vehicles with 12.5 V battery supplies.

Contextual Info: 5/91 F 7 ^ -0 9 -0 1 I^ O D U E F ÌH ' 'f r - Z f - ß - W 2225-K Martin Avenue, Santa Clara, CA 95050 FAX naM P O N B N TS s 408 492-1400 (408) 492-1500 10 to 2000 MHz TO-8 Cascadable Amplifier I r AP2009 (Typical Values) Medium Gain .

Philips BGY36 VHF Power amplifier Module

Abstract: BGY36 BGY33 Philips bgy32 BGY35 BGV33 BGY32 12p capacitor VB212
Contextual Info: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The deviceswill produce 18 W output into a 50 Î2 load. The modules consist of a two stage RF amplifier using npn transistor chips, together with lumpedelement matching components.

BGY33

Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Contextual Info: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.

CS35L33

Abstract: 12/CS35L33 WM8768 WM8281 CS48L10 CS496122 WM8740 "Audio D/WM8782
Contextual Info: Product Summary Guide Advanced Signal Processing Components Cirrus Logic Product Summary Guide First Choice in Advanced Signal Processing Components Cirrus Logic is a premier supplier of high-precision analog and digital signal processing components. The company is a world leader in the design of innovative custom, semi-custom and general-market ICs

Contextual Info: HMC421QS16 / 421QS16E v02.0705 8 PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz Typical Applications Features The HMC421QS16 / HMC421QS16E is ideal for: Input IP3: +19 dBm • GSM, GPRS & EDGE Infrastructure Integrated IF & LO Amps: +10 dBm LO • CDMA, WCDMA Infrastructure