870UH Search Results

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb —FREE S n96% , Ag4% Yes Yes IVidcom PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .0 2 0 S Q .(9 ) [• 5 0 ] .0 9 0 /. 1 1 5 [2 .2 9 /2 .9 2 ] WF more than you expect -A - ELECTRICAL SPECIFICATIONS @ 25°C u n le s s o th e rw ise n o te d :

Contextual Info: C U S TO M E R S n96% , T E R M IN A L Ag4% R oH S L E A D P b -F R E E Y es Y es more than you expect PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID 0 .0 2 4 ( 8 ) * DOT LOCATES TERM. #1 8 3 0 MAX. [2 1 .0 8 ] j -| PARAM ETER TEST P a c k a g in g

Contextual Info: APT30M40LVR A dvanced P o w er Te c h n o l o g y ' 300V 76A 0.040Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: APT30M40LVFR A dvanced po w er Te c h n o lo g y 300V POWER MOS V 76A 0.040Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™