85U1 Search Results

Contextual Info: 1 su M 2 SU 1 :1 NF = I= = x— • X c t s X =1 _ 3pjf S =m =m £ b= in , I* — — >-' £ - ' M 1: 1 3 SU M 1:1 cn CM = He*« |f = 1 _' •*|{ 4 SU M 1: 1 Note 1: Labeling: 85U1-XXXX = m aterial number, Y Y /Z Z = Y e a r/W e ek Note 2: For m aterial numbers of p a rts see individual draw ing of pa rt

CXK58257ATM

Contextual Info: CXK58257ATM/AYM -70LL/85LL/1 -70L/85U10LOLL/12LL /12L SONY 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32,768 w ords by 8 bits, CMOS static RAM.; It is suitable fo r portable and battery back-up

Contextual Info: TOSHIBA TC55V2001 FI/FTI/TRI/STI/SRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001FI/FTI/TRI/STI/SRI is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device

CXK584000

Abstract: CXK584000M 100 10L AD CXK584000YM
Contextual Info: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

Contextual Info: TOSHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

CXK584000

Contextual Info: Son y, CXK584000TM/YM/M/P ‘55lJ7rjU851J,0L -55LL770LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

OL10l

Contextual Info: CXK58267AM SONY. -7 0 L /8 5 L /1 0 L /1 2 L -7 0 L U 8 5 L L /1 0 L L y i2 L L 32768-word x 8-bit High Speed CMOS Static RAM D escription C X K 58267A M is 262,14 4 bits high speed C M O S static R A M organized as 3 2 ,768 words by 8 bits and operates from a single 5V supply. Th e C X K 58267A M 's two chip

Contextual Info: TOSHIBA T C 5 5 4 1 6 1 F n V T R L r 7 0 L / 8 5 L / 1 0 L PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description The TC554161 FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an

D38999 jamnut connector O ring

Abstract: MS18271 MS14055 umbilical connector MIL-STD-1353 ms3452l20-4p ms3402d18 MS3402 MC98S L-C-26500
Contextual Info: .— 41L. STD-1353B NOTICE 1 30 August 1983 . 41 MILITARY ANO TO ALL HOLDERS THE 1. LISTEO: ELECTRICAL AS SOCIATEO CONNECTORS, PLUG-IN HAROUARE, SELECTION sOCKETS ANO USE OF OF MI L- STO-1353B: FOLLOHING PAGES OF UIL-STO-1353B NEhI PAGE .$: !-. :>.: -.

85U1

Contextual Info: Data Display Products Wide Angle iUuminator’ Non-oiffused • Red, Amber, Amber/Yellow, Yellow, Green • Non-Diffused Tinted Encapsulation • Wide Viewing Angle Electro-O ptical •C haracteristics 8 9m Color Nam ber j rA = 25°c Peak Wavelength Jlpk (nm