85OC3 Search Results

XY-6060

Abstract: 3421A fluke T17 H331
Contextual Info: SEPTEMBER 27,1991 TEST REPORT # 91412 VERIFICATION TESTING 17X17 PGA SOCKET UF SAMTE APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It

3g mobile MOTHERBOARD CIRCUIT diagram

Abstract: H55S1222EFP mobile MOTHERBOARD CIRCUIT diagram H55s1222
Contextual Info: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

AS5C4009CW

Abstract: AS5C4009
Contextual Info: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention

H55S1262EFP

Contextual Info: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

smd A9

Abstract: smd transistor A8 AS5C4009LL 54321
Contextual Info: SRAM AS5C4009LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention

Contextual Info: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

9668e

Abstract: SR 13009 BY284 455e 2246 09 06 232 6843 9826e MAR 618 transistor MS1324 RX3 0633
Contextual Info: Product Characterization Report for the SP3243 Family of Products Prepared By: Velvet Doung & Greg West Date: Aug 17, 2006 SP3243 Product Family Characterization Report Table of Contents Section Introduction Characterization Procedure Data Summary for Key Parameters

Contextual Info: SRAM AS5C4009 LL Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION (Top View) 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention

Contextual Info: 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M 4Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

AS5C4009

Abstract: smd transistor marking A11
Contextual Info: SRAM AS5C4009 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention (0.2mW MAX worst case Power-down standby)

H55S1262EFP

Contextual Info: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

512 X 32 SRAM

Abstract: AS5C4009 198765 asi 320
Contextual Info: SRAM AS5C4009 Austin Semiconductor, Inc. 512K x 8 SRAM Ultra Low Power SRAM PIN ASSIGNMENT AVAILABLE AS MILITARY SPECIFICATION Top View 32-Pin DIP, 32-Pin SOJ & 32-Pin TSOP • SMD 5962-956131,2 • MIL STD-8831 FEATURES A18 1 32 Vcc • Ultra Low Power with 2V Data Retention