855 SOT363 Search Results

1n914 surface mount diode

Abstract: 1N4148 minimelf marking code DIODE d6 A6 DIODE 1n4148 marking a6 sot363 ka2 t4 DIODE T4 marking
Contextual Info: MCC Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Reverse Recovery Time mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF trr Max. nS Maximum Power Dissipation @ TA=25°C PD mW 1.00

Contextual Info: DEMO MANUAL DC1575A LTC4362-2: Monolithic Overvoltage/ Overcurrent Protector DESCRIPTION Demonstration circuit DC1575A features the LTC 4362, a monolithic overvoltage/overcurrent protector that safeguards 2.5V to 5.5V systems from power supply overvoltage. It is designed for portable devices with multiple

BAW56

Contextual Info: BAW56. Silicon Switching Diode
For high-speed switching applications
Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T* BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

free pdf transistor a7s

Abstract: BAV99 application marking A7s a7s diode BAV99 Diode bav99 A7s SOT23 application circuit bav99 BAV99 soldering Diode BAV99 SOT23
Contextual Info: BAV99. Silicon Switching Diode
For high-speed switching applications
Connected in series BAV99/T/W BAV99S/U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 D 2 1 Type BAV99 BAV99S BAV99T BAV99U BAV99W 2 3 Package SOT23 SOT363 SC75 SC74 SOT323 Configuration series dual series

A1s sot23

Abstract: A1S diode BAW56 diode a1s Marking a1s BAW56S a1s marking BAW56T BAW56U BAW56W
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! ,  , " ,  Type BAW56 BAW56S BAW56T BAW56U BAW56W ,   , ! Package SOT23 SOT363 SC75 SC74 SOT323 Configuration

BAW56

Abstract: BAW56S MARKING SOT23 a1s
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

BAS16

Contextual Info: BAS16. Silicon Switching Diode
For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16

BAW56S

Abstract: BAW56
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323

diode A6s

Abstract: BAS16 BAS16-03W BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U
Contextual Info: BAS16. Silicon Switching Diode
For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16

BAV70DW

Contextual Info: BAV70DW SOT-363 BAV70DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJA ELECTRICAL CHARACTERISTICS (Tamb=25℃

BAV99DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate DIODE SOT-363 BAV99DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range

BAW56DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range

BAV99BRW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate DIODE SOT-363 BAV99BRW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage VR: 75 V Operating and storage junction temperature range

BAW56DW

Contextual Info: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Diode SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range

BAV99BRW

Abstract: maRking kgj
Contextual Info: BAV99BRW SOT-363 BAV99BRW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:KGJ ELECTRICAL CHARACTERISTICS (Tamb=25℃

BAV70DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range

BAV99DW

Contextual Info: BAV99DW SOT-363 BAV99DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJG ELECTRICAL CHARACTERISTICS (Tamb=25℃

BAW56DW

Contextual Info: BAW56DW SOT-363 BAW56DW SWITCHING DIODE FEATURES Power dissipation PD: 200 mW Tamb=25℃ Collector current IF: 150 mA Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ MAKING: KJC ELECTRICAL CHARACTERISTICS (Tamb=25℃

BAV756DW

Contextual Info: BAV756DW SOT-363 BAV756DW SWITCHING DIODE FEATURES Power dissipation PD : 200 mW Tamb=25℃ Collector current 150 mA IF: Collector-base voltage VR: 75 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ MARKING:KCA ELECTRICAL CHARACTERISTICS (Tamb=25℃

BAV756DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV756DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KCA

BAV70DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAV70DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJA

BAW567DW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diode SOT-363 BAW567DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KAC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes SOT-363 BAV70DW SWITCHING DIODE FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance MAKING: KJA