850 VCSEL ULM Search Results

SM 850nm laser vcsel

Contextual Info: Laser Diodes Single-mode & polarizationstable VCSEL 850 nm, TO46, 2.0 mW • Single-mode • Ideal circular gaussian beam • Stable Polarization • Built-in ESD protection structure PRELIMINARY ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherwise stated

Contextual Info: Single Mode VCSEL 850±3 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser ‹ internal TEC and Thermistor ‹ Narrow linewidth ‹ 2nm tunability with TEC ‹ High performance and reliability ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT

850-nm-multimode-VCSEL

Abstract: VCSEL 850 nm ULM Photonics vcsel 850 vcsel nm 850 VCSEL ULM VCSEL 40G ULM Photonics GmbH
Contextual Info: V2 850 nm multimode VCSEL 2,5 / 3,125 / 5 Gbps for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power consumption Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.

ULM Photonics

Abstract: laser 850 nm ULM Photonics GmbH
Contextual Info: V3 850 nm multimode 2,5 / 3,125 / 5 Gbps NxM VCSEL array for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.

R/ULM850-05-TT-C0101D

Contextual Info: 5 Gbps VCSEL 850 nm 1x1/1x4/12 chip    For flip chip stud bump and wire bond Unsealed 85% r.H./85°C certified 1, 4, or 12 channel array configuration INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS

ULM850-14-TT-N0112U

Abstract: ULM850-14-TT-N0101U
Contextual Info: 14 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS

Contextual Info: 10 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top or substrate side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS

ULM Photonics

Abstract: 10Gbps-VCSEL ULM Photonics GmbH
Contextual Info: V2 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data trans • • • • • Warning: High speed up to 10 Gb/s High reliability Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam.

ULM Photonics

Abstract: 10Gbps-VCSEL 850 VCSEL ULM VCSEL 850 nm ULM Photonics GmbH
Contextual Info: V3 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data transmission • • • • Warning: High speed up to 10 Gb/s Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam. Class 3B laser product,

6MA80

Contextual Info: 5 Gbps 850 nm VCSEL chip Vertical Cavity Surface-Emitting Laser 1 High speed up to 5 Gbps 1 Unsealed 85% r.H. / 85°C certified 1 Top side emission 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T = 25°C unless otherwise stated

ULM850-L2-PL-S0101U

Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Contextual Info: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

vcsel SMD

Abstract: ULM855-G2-TN-SSMDTL
Contextual Info: Single Mode VCSEL 850nm SMD package 1 without encapsulation 1 ESD protection 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated PARAMETER Emission wavelength SYMBOL 1R UNITS

ULM850-03-TN-S46FTT

Abstract: ULM850-03-TN-S46FOP ULM850-10-TN-S46FOP ULM980-03-TN-S46FOP ulm850 ULM980-01-TN-S46FTT ULM Photonics ULM850-10 E2000 T046
Contextual Info: Single Mode VCSEL 775±3 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor ‹ Narrow linewidth ‹ 2nm tunability with TEC ‹ High performance and reliability ‹ ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT

Contextual Info: Low cost Single Mode VCSEL 850nm,TO46, no glass window Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS

Contextual Info: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER

Contextual Info: 3mW / 6mW VCSEL SMA Receptacle / Chip Vertical Cavity Surface-Emitting Laser  3mW / 6mW peak power  >2,5 Gbps speed  e.g. for storage, free space, sensing  other wavelengths available, e.g. for WDM  INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

Contextual Info: 12mW / 24mW VCSEL SMA Receptacle / Chip Vertical Cavity Surface-Emitting Laser  12mW / 20mW / 24mW peak power  >2,5 Gbps speed  e.g. for storage, free space, sensing  other wavelengths available, e.g. for WDM  INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

Contextual Info: 6mW / 12mW VCSEL SMA Receptacle / Chip Vertical Cavity Surface-Emitting Laser  6mW / 12mW peak power  >2,5 Gbps speed  e.g. for storage, free space, sensing  other wavelengths available, e.g. for WDM  INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

ULM850-PM-TN-S46XZP

Contextual Info: Low cost Single Mode VCSEL 850nm,TO46, 1.0mW Ideal circular gaussian beam 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

Contextual Info: Single mode & polarization VCSEL 850nm,TO46, 0.7mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE

vcsel SMD

Contextual Info: 12mW VCSEL 850nm SMD Package Vertical Cavity Surface-Emitting Laser 1 SMD package 1 12mW cw output power 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Prototype ELECTRO-OPTICAL CHARACTERISTICS SMD package

laser diode three wave for Cd Player

Abstract: InGaAsN blue Laser-Diode samsung CD Pick-Up head GaAs 850 nm Infrared Emitting Diode VCSEL array, 1550 VCSEL Reflective Optical Sensor Edge-Emitting Diode laser diode samsung High Speed characteristics of VCSELs
Contextual Info: A P P L I C AT I O N S O P TO E L E C T R O N I C S Vertical-cavity surface-emitting lasers The laser of tomorrow Vertical cavity surface-emitting lasers VCSELs are still fairly unknown. This should soon change, however, as they combine, to put it simply, the

Contextual Info: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization at high output power up to 1.4mW Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION

ULM Photonics

Abstract: VCSEL array ULM Photonics GmbH
Contextual Info: Monolithic VCSEL array for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8 2.0 ELECTRO-OPTICAL-CHARACTERISTICS, CHIP FLIP-CHIP MOUNTED