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    Eaton Corporation

    Eaton Corporation 10250T184NC1N

    Panel Mount Indicators - Neon & Incandescent IND LGT 480V/XFR R PLST LENS
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    Mouser Electronics 10250T184NC1N
    • 1 $307.23
    • 10 $289.97
    • 100 $289.97
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    Eaton Corporation 10250T184NC2NX

    Panel Mount Indicators - Neon & Incandescent 480v TX Ind LGT Unit W/A GN Plastic Len
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 10250T184NC2NX
    • 1 $318.46
    • 10 $297.76
    • 100 $297.76
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    Eaton Corporation 10250T184NC1NX

    Panel Mount Indicators - Neon & Incandescent OILTIGHT INDICATING LIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 10250T184NC1NX
    • 1 $328.99
    • 10 $307.61
    • 100 $307.61
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    Eaton Corporation 10250T184NC5N

    Panel Mount Indicators - Neon & Incandescent INDICATIING LIGHT W/ CLEAR PLASTIC LENS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 10250T184NC5N
    • 1 $328.99
    • 10 $307.61
    • 100 $307.61
    • 1000 $307.61
    • 10000 $307.61
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    Eaton Corporation 10250T184NC6NX

    Panel Mount Indicators - Neon & Incandescent INDICATING LIGHT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 10250T184NC6NX
    • 1 $328.99
    • 10 $307.61
    • 100 $307.61
    • 1000 $307.61
    • 10000 $307.61
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    Find more 84NC price and stock on Findchips.com

    84NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HFA15TB60

    Abstract: PD233 ULTRA fast rectifier diode 15A 200V anode common ULTRA fast rectifier diode 30A 200V anode common HFA15TB60-1 IRFP250 IR HFA15TB60
    Contextual Info: Bulletin PD -2.334 rev. B 01/02 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		hfa15tb60hfa15tb60-1o-220aco-262+5pd233ultra fast rectifier diode 15a 200v anode commonultra fast rectifier diode 30a 200v anode commonirfp250ir hfa15tb60 PDF

    FDB3632

    Abstract: FDP3632 FDI3632 tc144e
    Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3632fdp3632fdi3632tc144e PDF

    HFA15TB60PBF

    Abstract: HFA15TB60 HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60
    Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		pd-95738hfa15tb60pbfhfa15tb60-1hfa15tb60+512-mar-07hfa06tb120irfp250vishay transistor date codeir hfa15tb60 PDF

    TRANSISTOR SMD MARKING CODE DM

    Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2
    Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		pd-20615hfa15tb60scharacterist86smd-220+5transistor smd marking code dmtransistor smd code marking tmirfp250transistor smd marking code 2x nsmd marking dt2 PDF

    irfp250

    Abstract: HFA06TB120 HFA15TB60 HFA15TB60-1 international rectifier
    Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		pd-95738hfa15tb60pbfhfa15tb60-1hfa15tb60+5unsurpass120o-262irfp250hfa06tb120international rectifier PDF

    Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		pd-20615hfa15tb60s08-mar-07 PDF

    Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		pd-96033hfa15tb60spbfhfa15tb60shfa15t PDF

    FDB3632

    Abstract: FDI3632 FDP3632 tc144e
    Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3632fdp3632fdi3632tc144e PDF

    Contextual Info: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		hfa15tb60o-220ac PDF

    IR HFA15TB60

    Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		hfa15tb60hfa15tb60-112-mar-07ir hfa15tb60 PDF

    Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		pd-96033hfa15tb60spbfhfa15tb60s08-mar-07 PDF

    FDB3632

    Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3632fdp3632fdi3632 PDF

    Contextual Info: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		kdb3632fdb3632o-263 PDF

    FDB3632_F085

    Abstract: FDB3632-F085 FDB3632
    Contextual Info: FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


    Original     		fdb3632o-263abfdb3632_f085fdb3632-f085 PDF

    Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		hfa15tb60hfa15tb60-108-mar-07 PDF

    Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		pd-95738hfa15tb60pbfhfa15tb60-1hfa15tb60+108-mar-07 PDF

    HFA15TB60S

    Abstract: IRFP250
    Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free


    Original     		pd-96033hfa15tb60spbfhfa15tb60s12-mar-07+1irfp250 PDF

    IR HFA15TB60

    Abstract: HFA15TB60 HFA15TB60-1 IRFP250
    Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC


    Original     		hfa15tb60hfa15tb60-1o-220aco-262+2ir hfa15tb60irfp250 PDF

    HFA15TB60S

    Abstract: IRFP250 SMD-220 MAR 618 transistor
    Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		pd-20615hfa15tb60s12-mar-07irfp250+2smd-220mar 618 transistor PDF

    FDB3632

    Contextual Info: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3632fdp3632fdi3632fdh3632+4o-220abo-263abo-262abo-24manner PDF

    HFA15TB60

    Abstract: IRFP250
    Contextual Info: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs


    Original     		hfa15tb60irfp250 PDF

    HFA15TB60

    Abstract: IRFP250
    Contextual Info: Bulletin PD -2.334 rev. A 11/00 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits VF = 1.7V Qrr * = 84nC


    Original     		hfa15tb60irfp250 PDF

    FDB3632

    Abstract: KDB3632 84NC mosfet smd
    Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)


    Original     		kdb3632fdb3632o-26384nc+1mosfet smd PDF

    FDB3632

    Abstract: FDH3632 FDI3632 FDP3632
    Contextual Info: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		fdb3632fdp3632fdi3632fdh3632+1o-220ab PDF