84A DIODE Search Results

Contextual Info: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency

digital phase shifter mhz

Abstract: "Phase Shifters" digital phase shifter phase shifters
Contextual Info: PTB & PTM-84A Series 8-BIT DIGITAL PHASE SHIFTER 20 to 100 MHz / 1.4 Phase Resol. / Monotonic / Broadband, Switched Cable Design / BNC or SMA PRINCIPAL SPECIFICATIONS GENERAL SPECIFICATIONS Calibration Frequency, fc, MHz Usable Bandwidth SMA Model Number BNC

BDW83D

Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
Contextual Info: SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching

ultra fast recovery diode 500V

Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low

BDW84

Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
Contextual Info: Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching

APT84F50B2

Abstract: APT84F50L MIC4452
Contextual Info: APT84F50B2 APT84F50L 500V, 84A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET T-MaxTM Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low

nf 0036 diode

Contextual Info: APT30M36B2FLL APT30M36LFLL 84A 0.036Ω 300V POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

marking code 43a

Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

AN-994

Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

Contextual Info: PTB & PTM-84A Series 8-BIT DIGITAL PHASE SHIFTER 20 to 100 MHz / 1.4' Phase Resol. / Monotonie / Broadband, Switched Cable Design / BNC or SMA PRINCIPAL SPECIFICATIONS GENERAL SPECIFICATIONS Calibration Frequency, fc, MHz Usable Bandwidth SMA Model Number

UDN2981 application note

Abstract: UDN2981
Contextual Info: 2981 2984 THRl 8-CHANNEL SOURCE DRIVERS UDN2982/84LW UDN2981-84A Recommended for applications requiring separate logic and load grounds, load supply voltages to 80 V, and load currents to 500 mA, the UDN2981A through UDN2984A/LW 8-channel source drivers are

Contextual Info: APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: PD - 9.1278C International IO R Rectifier IRF1010N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = Id = 0 011 £1 84A(D Description

APT30M36B2LL

Abstract: APT30M36LLL
Contextual Info: APT30M36B2LL APT30M36LLL 300V 84A 0.036Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

marking F53

Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
Contextual Info: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†

BDW84C

Abstract: BDW84 BDW84B BDW84A DIODE 84A BDW84D
Contextual Info: SavantIC Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching

BDW83

Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
Contextual Info: Inchange Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching

ISD50A

Abstract: NS BR 1010 690 mosfet
Contextual Info: E 1010 HEXFET z Advanced Process Technology z Ultra Low On-Resistance z Dynamic dv/dt Rating Power MOSFET VDSS = 60V z 175°C Operating Temperature z Fast Switching z Fully Avalanche Rated ID = 84A RDS ON =13mΩ Description Advanced HEXFET® Power MOSFETs from

APT30M36B2FLL

Abstract: APT30M36LFLL
Contextual Info: APT30M36B2FLL APT30M36LFLL 300V POWER MOS 7 R FREDFET FREDFET 84A 0.036Ω B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: AP9990GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 60V RDS ON SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant & Halogen-Free 5m 84A S D Description

Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft