84 FBGA OUTLINE Search Results
84 FBGA OUTLINE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MKZ36V |
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Zener Diode, 36 V, SOT-23 | Datasheet | ||
MUZ6V2 |
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Zener Diode, 6.2 V, SOT-323 | Datasheet | ||
CEZ24V |
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Zener Diode, 24 V, SOD-523 | Datasheet | ||
MKZ30V |
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Zener Diode, 30 V, SOT-23 | Datasheet | ||
MSZ36V |
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Zener Diode, 36 V, SOT-346 | Datasheet |
84 FBGA OUTLINE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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E5116
Abstract: DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
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EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 E5116 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E | |
DDR2-667
Abstract: EDE5116AJBG
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EDE5116AJBG-LI 84-ball 667Mbps M01E0706 E1172E20 DDR2-667 EDE5116AJBG | |
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization 8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA) Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E40 | |
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization 8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA) Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E50 | |
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E10 | |
DDR2-533
Abstract: DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400
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EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E20 DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400 | |
Contextual Info: DATA SHEET 2G bits DDR2 SDRAM EDE2116AEBG 128M words x 16 bits Specifications Features • Density: 2G bits • Organization 16M words × 16 bits × 8 banks • Package 84-ball FBGA Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE2116AEBG 84-ball 800Mbps M01E1007 E1820E21 | |
EDE1116ACBGContextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1116ACBG-1J 64M words x 16 bits, 1066Mbps Specifications Features • Density: 1G bits • Organization 8M words × 16 bits × 8 banks • Package 84-ball FBGA Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE1116ACBG-1J 1066Mbps) 84-ball 1066Mbps M01E0706 E1357E10 EDE1116ACBG | |
Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2516AEBG-1J 16M words x 16 bits, 1066Mbps Specifications Features • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package ⎯ 84-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE2516AEBG-1J 1066Mbps) 84-ball 1066Mbps M01E0706 E1330E10 | |
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V |
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EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E30 | |
ede2116aebg
Abstract: DDR2-800 Humidifier EDE2116AEBG-8E-F ELPIDA DDR2 SDRAM
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EDE2116AEBG 84-ball 800Mbps M01E1007 E1820E20 ede2116aebg DDR2-800 Humidifier EDE2116AEBG-8E-F ELPIDA DDR2 SDRAM | |
DDR2-400
Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
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EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E | |
E1369
Abstract: DDR2-667
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EDE1116BEBG 84-ball 667Mbps M01E0706 E1369E10 E1369 DDR2-667 | |
DDR2-667
Abstract: EDE5116AJBG
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EDE5116AJBG-LI 84-ball 667Mbps M01E0706 E1172E20 DDR2-667 EDE5116AJBG | |
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DDR2-667
Abstract: EDE1116ACSE-LI
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EDE1116ACSE-LI 84-ball 667Mbps M01E0706 E1103E20 DDR2-667 EDE1116ACSE-LI | |
EDE1116ACSE-LI
Abstract: DDR2-667
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EDE1116ACSE-LI 84-ball 667Mbps M01E0706 E1103E20 EDE1116ACSE-LI DDR2-667 | |
20890Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE/BE 70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device |
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DS05-20890-1E MBM29PL3200TE/BE 90-pin 84-ball MBM29PL3200TE/BE 20890 | |
208 pin rqfp drawing
Abstract: 240 pin rqfp drawing BGA 144 MS-034 AAL-1 bga package weight 192 BGA PACKAGE thermal resistance
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EP4CE15
Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
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DS-PKG-16 EP4CE15 MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22 | |
EP4CE6 package
Abstract: EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80
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DS-PKG-16 EP4CE6 package EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80 | |
bd248
Abstract: UBGA169 EP1800 324 bga thermal HC1S6 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
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ep600i
Abstract: processor cross reference MS-034 1152 BGA Cross Reference epm7064 cross reference EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
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PQFP 176
Abstract: 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760
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144-Pin 100-Pin 256-Pin 780-Pin 256-Pin 68-Pin PQFP 176 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760 | |
240 pin rqfp drawing
Abstract: BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance
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7000B, 7000AE, 240 pin rqfp drawing BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance |