838P Search Results

Contextual Info: 1 9 9 9 =M l C O N D U C T O R tm 838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

CP113

Abstract: CP135 MARKING Z04 FIN26 CP106 MDIO controller TFRCS marking z12 bga "routing tables" HCL G28 CP
Contextual Info: C-5 Network Processor Data Sheet TM Supporting C-5 Network Processor Version D0 Feature List Complete programmability • • Programmability at all levels of the protocol stack: Layers 2-7 Examples of C-5 enabled systems: – Multiservice Access Platforms MSAPs

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: 108-78268 Product Specification 製品規格 22 May 13 Rev G DYNAMIC Connector D1000 Series GOLD Plating ダイナミックコネクタ D1000 シリーズ金 シリーズ金めっき めっき) 1. 適用範囲 1. Scope : 1.1. 内容 本規格はダイナミックコネクタ D1000 シリーズの製品性

XPC823E

Abstract: XPC832 "motorola computing group" MC68824 motorola zc XPC8260A XCC501RX166LD0B XCC501RX200LD0B XPC180 XPC855T
Contextual Info: 7 2 , R O T C NETWORK PROCESSORS O C S E H C AR D E IV BY U D N E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1007/D REV 0 C-PORT NETWORK PROCESSOR Network Processors Device No. Device Name Package Speeds Rev Throughput Power Typ.

RXIDk 2H

Abstract: asea ri 5A relay RTXP 18 5 MVA generator MVA generator transformer 2 mva RXIDG 838-AA 838-HA 1MDU09024-EN
Contextual Info: Time-overcurrent relays and protection assemblies RXIDK 2H, RAIDK, RXIDG 21H, RAIDG Page 1 1MRK 509 002-BEN Issued January 2004 Revision: A Data subject to change without notice SE970134 (SE970150) Features RXIDK 2H relay and assemblies • Single-, two-, three-phase and three-phase

838p

Abstract: FDR838P
Contextual Info: 838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

sot23 theta jc value

Abstract: DS18S201-Wire Theta JB 8-Pin TSSOP theta jc value an3930 DS1621 DS1624 TSSOP173 DS1822 DS1825
Contextual Info: Maxim > App Notes > 1-Wire DEVICES GENERAL ENGINEERING TOPICS TEMPERATURE SENSORS and THERMAL MANAGEMENT MEASUREMENT CIRCUITS Keywords: Theta JA, Theta JC, theta-ja, theta-jc, self heating, thermal dissipation, heat dissipation, power dissipation, thermal resistance, junction to case, junction to ambient, temperature, sensor, temperature

umts simulink matlab

Abstract: umts simulink hughes cpu MultiService Access Platform MSC810X 3g modem circuit FOIP MCC501RX233TD0B MPC8260 Hughes Access Network
Contextual Info: Access Universal Access Gateway Overview The Universal Access Gateway provides multiservice support for voice, fax, and data calls over packet to meet the increasing demands of network convergence. Products require increasing flexibility and may be located at a variety of network nodes; for

CBVK741B019

Abstract: F63TNR F852 FDR838P
Contextual Info: 838P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

5l 0380

Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
Contextual Info: 1999 =M l C O N D U C T O R tm 838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e