838MHZ Search Results

RF1131

Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features „ „ „ „ „ Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

RF1131

Abstract: DS100406
Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features      Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

Contextual Info: t>a 4 ^ 0 2=] 0017 2 fl^ T b S • MITSUBISHI RF POWER MODULE M57792 806-870MHZ, 13.5V, 20W, FM MOBILE RADIO BLOCK DIAGRAM PIN : © Pin @ V CC 1 VCC 2 ©VCC3 ® PO DGND © : RF INPUT : 1st. DC S U PPLY : 2nd. DC SU PPLY : 3rd. DC SU PPLY : RF OUTPUT

Contextual Info: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features ̈ ̈ ̈ ̈ ̈ ̈ Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation

RA03M8087M-101

Abstract: RA03M8087M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to

D408

Abstract: RA03M8087M-E01 RA03M8087M RA03M8087M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 806- to 870-MHz range.

"MOSFET Module"

Abstract: 03M8087 marking GG RA03M8087M rara RA03M8087M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087 RA03M8087M 03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier

RF1131

Abstract: QFN 36 footprint antenna CDMA GPRS
Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features      Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

869MHz

Abstract: 8680MHz
Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 868.0MHz Part No: MP03372 Model: TA1219A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: +10dBm 2. DC Voltage: 5V

RA03M8087M

Abstract: RA03M8087M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to

Contextual Info: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features „ „ „ „ „ „ Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation

MRF844

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica­ tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.

Contextual Info: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features      Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm

RA03M8087M

Abstract: RA03M8087M-101 transistor marking zg
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to