836 DIODE CURRENT Search Results

650nm 5mw laser module

Abstract: 650NM laser diode 5mw QL65D6SA QSI 650 QL65
Contextual Info: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode

850nm 5mw laser diode

Abstract: 1550 laser diode B 1359 Dual Wave laser diode 1550 communication laser diode 1550nm communication laser diode 1550nm laser diode Laser Diode 850nm 1300nm laser diode 1550 nm SMJ-3S3A-1300
Contextual Info: 219 Westbrook Rd, Carp, ON, Canada, K0A 1L0 Toll Free: 1-800-361-5415 Tel: 613 831-0981 Fax:(613) 836-5089 E-mail: sales@ozoptics.com VISOR TM BASED DUAL LASER DIODE SOURCE Features: • Dual wavelength laser diode sources, with interchangeable modules: four

OZ Optics Fiber pigtail AR coating

Abstract: Laser Diode 1550nm 1300nm 1550nm laser diode Radial sma OPTICAL FIBER LDC-21A laser coupler LASER DISTANCE METER SMA 905 fiber dimensions laser diodes for optical source lens laser diode
Contextual Info: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX: (613) 836-5089 E-MAIL: sales@ozoptics.com WEBSITE: www.ozoptics.com LASER DIODE TO FIBER COUPLERS A: 0.708" B: 0.552" D: 0.275" L: 0.650" L Ø: 0.086" Lens A B Laser Diode

HSC276A

Abstract: DSA003644
Contextual Info: HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836 Z Rev. 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

peltier driver

Abstract: SMA905 1550nm led diode Peltier 1550 laser diode sLED 1550nm 2 Wavelength Laser Diode LED 1550nm peltier cooler SMA-905
Contextual Info: OZ OPTICS LTD. 219 WESTBROOK RD, CARP, ON, CANADA, K0A 1L0 TEL: 613 831-0981 FAX:(613) 836-5089 E-MAIL: sales@ozoptics.com WEB SITE: www.ozoptics.com FIBER PIGTAILED TEMPERATURE CONTROLLED LASER DIODE HOUSING FEATURES: • • • • • • • • •

U 806 DI

Abstract: 836 DIODE tp 806
Contextual Info: tSENSITRON SPM6G050-060D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 836, REV. A Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS

836 DIODE current

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G050-060D TECHNICAL DATA DATA SHEET 836, REV. B Three Phase IGBT Bridge, With Gate Drivers & Optical Isolation Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS

7660 harris

Abstract: transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 TQ9142B rf power amplifier 850 MHZ Dual PNP Transistor diode 824
Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9142B VD2 TQ9142 VD3 ZO = 50Ω RF OUT RF IN VG1 VG2 VG3 High-Efficiency 3-Stage AMPS Power Amplifier IC GND The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets and

ptx1

Abstract: GPS SAW filter
Contextual Info: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: • SLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • • Excellent Crossmodulation Performance -100 dBm Typ @ Cellular (PTx1 = 22.5 dBm @ 836 MHz, PTx2 = 22.5 dBm

MG200H2CK1

Abstract: tf3s cm7200
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)

Contextual Info: TQP4M3007 Preliminary data sheet SP3T High Power 2.7V CDMA Antenna Switch Features: MLP-12 lead 3 x 3 mm Package Outline: • MLP-12 Packaged PHEMT GaAs MMIC Die • Small Footprint 3.0 x 3.0 mm • Excellent Crossmodulation Performance -107 dBm Typ @ Cellular

Contextual Info: S WIRE LE SS E M I C O N D U C T O R , I N C C O M M U N I C A T I O N S VD1 VD2 High-Efficiency 3-Stage AMPS Power Amplifier 1C The TQ 9142B is a h ig h ly efficient 3-stage power a m p lifie r developed fo r handsets and portable term in a ls operating in the AM PS ce llu la r band 82 4 -8 4 9 M Hz . The part is

duplex display

Abstract: PCF8577CT
Contextual Info: IN TE G R A TE D ClR C U fTS PCF8577C LCD direct/duplex driver with l2C-bus interface 1997 Mar 28 Product specification Supersedes data of 1995 Jun 08 File under Integrated Circuits, IC12 Philips Semiconductors P H IL IP S PHILIPS P h ilip s S e m i c o n d u c t o r s

smd diode code mj

Abstract: smd diode code SL
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS

mlp 836

Contextual Info: TQP4M3018 Preliminary data sheet Rev A SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

GPS SAW filter

Contextual Info: TQP4M3007 Preliminary data sheet Rev B SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

GPS SAW filter

Contextual Info: TQP4M3007 Preliminary data sheet Rev C SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

6X836

Contextual Info: 3.3V C M O S 20-BIT U N I V E R S A L BUS DRIVER WITH 3-STATE O U T P U T S IDT74ALVCH1 6836 IDT74ALVCH1 62836 ADVANCE INFORMATION FE ATURES: DESCRIPTION: • C o m m o n feat ures: The ALVCH 16x836 20-bit universal bus drivers are built using advanced dual metal CMOS technology. These high­

TQP4M3007

Contextual Info: TQP4M3007 Preliminary data sheet Rev0.2 SP3T High Power 2.7V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V

cec p77 transistor

Abstract: APM 2513 pm 8921 to-92 type 120 gsm AN2654 32181 light sensor 011V CEC2 2510
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: TQP4M3018 Preliminary Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 RF3 2 8 RF1 N/C 3 7 N/C • • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm

Contextual Info: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die

TQP4M3007

Contextual Info: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die

Contextual Info: bOE D • SIEMENS fl235bDS 0GSD727 S73 « S I E G SIEMENS AKTIENGESELLSCHAF T ' é S - O á TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching