835MHZ Search Results
835MHZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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filter 880MHzContextual Info: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute CDMA 收发双工器滤波器 III Tx/Rx Duplexer, Filter for CDMA III 1. Specifications SDP-8A 技术指标 SQF-8/10A 接收 发射 825-835MHz 870-880MHz |
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sqf-8/10a825-835mhz870-880mhz821mhz+3 | |
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Contextual Info: WSA-00038 High Selectivity A-Band Filter Assembly Description: The WSA-00038 is a compact, high selectivity A-band receive system assembly consisting of two filters covering primary and extended A receive bands 824-835MHz and 845-846.5MHz respectively , dual |
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wsa-00038824-835mhzdc-822mhz837-844mhz+2 | |
835MHz
Abstract: smd diode marking 325 marking 03 murata SAW
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sawep835mcm0f00835mhzsmd diode marking 325marking 03+1 | |
duplexer filter
Abstract: 870-880MHz
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870-880mhz825-835mhzduplexer filter | |
SAWES835MCM0F00
Abstract: smd diode marking 325 powermeter 800 SAWES SMD c015 murata SAW
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sawes835mcm0f00835mhz1950mhzsmd diode marking 325+4 | |
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Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications. |
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rd10mms2870mhz12wtyp800mhz-band | |
RA45H7687M1
Abstract: RA45H8994M1 AN-900-027-B
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an-900-027-bra45h8994m1ra45h7687m1ra45h8994m1/7687m1+3 | |
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Contextual Info: 830MHz SAW Filter 20MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT83005 www.sipatsaw.com Features For RF SAW filter Single-ended operation Ceramic Surface Mount Package Small size |
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830mhz20mhzlbt830052002/95/ec+4 | |
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Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 925.0MHz Part No: MP04346 Model: TA0754A Rev. No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC voltage: 5V |
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mp04346ta0754a10dbm928mhz+4 | |
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Contextual Info: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. |
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cxa4011gccxa4010 | |
341V
Abstract: RA45H7687M1 22an VGG13
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an-900-026-ara45h7687m1806mhz20dbm+3 | |
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Contextual Info: RF2643 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER Typical Applications • TDMA/AMPS Cellular Systems • PCS Systems • CDMA/AMPS Cellular Systems • Portable Battery-Powered Equipment Product Description 0.15 C A -A- The RF2643 is a complete upconverter, dual-power |
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rf264320-pin4mmx4m25 | |
SMIQ06B
Abstract: CXG1213XR
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cxg1213xr12-pin5980mhz880mhz+6 | |
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Contextual Info: SP9T/10T Antenna Switch Module for GSM and UMTS/CDMA Dual Mode Handset CXM3519ER Description The CXM3519ER is a SP9T/SP10T antenna switch module for GSM and UMTS/CDMA dual-mode handset. This IC has a built-in dual low pass filter and a +1.8V CMOS compatible decoder. |
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sp9t/10tcxm3519ersp9t/sp10tsp10t+1 | |
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RX318
Abstract: CXM3553ER jammer gsm SP12T RF pcb antenna for GSM VQFN-30P 4090MHz 900rx
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sp12tcxm3553ervqfn-30prx318+4 | |
CXM3529XRContextual Info: SP9T Antenna Switch for GSM/UMTS Dual Mode CXM3529XR Description The CXM3529XR is SP9T antenna switch for GSM/UMTS dual mode. This IC has a 1.8V CMOS decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity. |
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cxm3529xr24pin24-pin100pf | |
LFB315G82SN5-996
Abstract: LFB32426MSC1-603 LFB31SL LFB321G44SA1A538 LFB32205MSK1-948
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lfb311g48sg1-985lfb311g90sg1-799lfb311g90sg2-797lfb311g95sg3a564+11 | |
XM0830SM-BL0901Contextual Info: PRELIMINARY DATA SHEET XM0830SM-BL0901 DS0830SM-01A GaAs 1bit Control High Power SPDT Switch for 0.8~3.0GHz Applications Cell, PCS, AWS,W-CDMA, TD-SCDMA, WiMAX and other RF applications. Features • Positive Voltage Control .+1.5Vmin. • Low Insertion Loss .0.25dBtyp. @1.0GHz |
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xm0830sm-bl0901ds0830sm-01a25dbtyp | |
DFCH31G54HDJAA
Abstract: LFD31859MDP1A009 LFB321G61SA1A555 LFD212G45D dfch3860mhdjaa SAFSD1G57FA0T00 LFL18924MTC1A052 1805MHz DFCB25G80 DFCB21G57LBJAB
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dfcb800/900mhzdfcb2836mldjaadfcb3815mldjaadfcb3836mldjaa+15 | |
HMC838LP6CContextual Info: HMC838LP6CE v01.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -111 dBc/Hz in Band Typ. |
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hmc838lp6ce24-bithmc860lp3ehmc838lp6c | |
RF2643Contextual Info: RF2643 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER Typical Applications • TDMA/AMPS Cellular Systems • PCS Systems • CDMA/AMPS Cellular Systems • Portable Battery-Powered Equipment Product Description 0.15 C A -A- The RF2643 is a complete upconverter, dual-power |
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rf264320-pin | |
jammer gsm
Abstract: CXM3555ER TRX ESD SP10T
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sp10tcxm3555er68dbmvqfn-26p+2 | |
MP02436
Abstract: TA0907A
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830mhzmp02436ta0907a10dbm+2 | |
CXM3520
Abstract: cxm3520BER SP10T jammer gsm
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umtscdmasp10tcxm3520bercxm3520bergsmsp10t+6 | |