8340 DIODE Search Results

834x

Abstract: S-8340 S-8340A25AFT-T2 S-8340A30AFT-T2 S-8340A33AFT-T2 S-8341 S-8341C50 UH28M S8340B00AFT
Contextual Info: Rev.2.1_60 PWM Control & PWM/PFM Control S-8340/8341 Series High-Frequency Step-Up Switching Regulator-Controllers The S-8340/8341 Series consists of CMOS step-up switching regulatorcontrollers with PWM control S-8340 and PWM/PFM switched control (S8341). These devices contain a reference voltage source, oscillation circuit,

transistor current booster circuit

Abstract: PWM IC 8 PIN 8340 diode current source circuit diagram 8341
Contextual Info: PWM CONTROL & PWM/PFM CONTROL HIGH OSCILLATION FREQUENCY STEP-UP SWITCHING REGULATOR-CONTROLLERS UNDER DEVELOPMENT The S-8340/8341 series is the PWM control S-8340 and the PWM/PFM switchover control (S-8341) CMOS booster switching regulation controller made up of reference voltage

Different types of PWM ICs

Abstract: SL 100 NPN Transistor FDN335N S-8340 S-8341 8341b Matsua rs 24v
Contextual Info: Rev.3.0_01 STEP-UP, 600 kHz, PWM CONTROL OR PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8340/8341 Series The S-8340/8341 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, oscillation circuit, error amplifier, phase compensation circuit, PWM

8340 diode

Abstract: S-8340 S-8341
Contextual Info: Rev.3.1_00 STEP-UP, 600 kHz, PWM CONTROL OR PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8340/8341 Series The S-8340/8341 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, oscillation circuit, error amplifier, phase compensation circuit, PWM

CNW82

Abstract: CNW83 CNW84 CNW85
Contextual Info: WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

AN 7373

Contextual Info: LED SPACER MOUNTS • Unique design separates leads and retains Tri-Lead and/or Bi-Lead components “SELF-ALIGNING” FOR BI-LEAD T-1 & T-1 3/4 • These unique, new self-aligning Bi-Lead LED mounting spacers, for T-1 and T-1 / 3 • • Designed for PC board mounting of Tri-Lead (and/or

CNW82

Abstract: CNW83 CNW84 CNW85
Contextual Info: WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity.

7357

Abstract: pm 8921 CAT 24 8930 8326 8328 8908
Contextual Info: M55 Sect 5 p72-85 m 10/13/06 6:06 PM Page 83 “UNIVERSAL” FOR T-1 & T-1 3/4 “SELF-ALIGNING” FOR BI-LEAD T- 1 & T- 1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • These unique, new self-aligning Bi-Lead LED mounting spacers, for T-1 and T-1 3/4

SKIM45

Abstract: SKiM93
Contextual Info: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM459GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

SKIM459GD12E4

Contextual Info: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C 438 A Ts = 70 °C 347 A 450 A VGES

Contextual Info: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 554 A Ts = 70 °C 450 A 450 A ICnom ICRM VGES SKiM 93 tpsc Trench IGBT Modules SKiM459GD12E4 Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

SKIM459GD12E4

Contextual Info: SKiM459GD12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3xICnom tpsc Trench IGBT Modules VCC = 800 V VGE 15 V VCES 1200 V V 554 A 450 A 450 A 1350 A -20 . 20 V 10 µs -40 . 175

ds33

Contextual Info: Bridgelux Vero 29 Array Series Product Data Sheet DS33 – Published April 16th 2013 BXRC-27x10K0, BXRC-30x10K0, BXRC-35E10K0, BXRC-40E10K0, BXRC-50C10K0 Introduction VeroTM represents a revolutionary advancement in chip on board COB light source technology

Si4368DY

Contextual Info: Si4368DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFETt FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0032 @ VGS = 10 V 25 0.0036 @ VGS = 4.5 V 22 D Extremely Low Qgd WFET Technology for Switching Losses Improvement D TrenchFETr Gen II Power MOSFET

IXFK38N80Q2

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 38N80Q2 IXFX 38N80Q2 Q-Class = = = 800 V 38 A Ω 220 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol Test Conditions

transistor fn 1016

Contextual Info: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making

Si4368DY

Abstract: Si4368DY-T1-E3
Contextual Info: Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0032 at VGS = 10 V 25 0.0036 at VGS = 4.5 V 22 • Halogen-free According to IEC 61249-2-21 Available • Extremely Low Qgd WFET Technology for

Contextual Info: HV256 HV256 Preliminary Information 32-Channel High Voltage Amplifier Array Features Block Diagram ❑ 32 independent high voltage amplifiers ❑ 300V operating voltage Byp-VPP To internal VPP bus ❑ 295V output voltage Byp-VDD To internal VDD bus ❑ 2.2V/µs typical output slew rate

Contextual Info: HV256 HV256 Preliminary Information Demo Kit Available 32-Channel High Voltage Amplifier Array Features Block Diagram ❑ 32 independent high voltage amplifiers ❑ 300V operating voltage BYP-VPP To internal VPP bus ❑ 295V output voltage BYP-VDD To internal VDD bus

AN 7823

Abstract: 1N4004 1N5817 HV256 HV256FG HV256X 1N4004 diode PIV rating
Contextual Info: HV256 HV256 Preliminary Information 32-Channel High Voltage Amplifier Array Features Block Diagram ❑ 32 independent high voltage amplifiers ❑ 300V operating voltage BYP-VPP To internal VPP bus ❑ 295V output voltage BYP-VDD To internal VDD bus ❑ 2.2V/µs typical output slew rate

BXRC-40E10K0

Contextual Info: Bridgelux Vero 29 Array Series Product Data Sheet DS33 BXRC-27x10K0, 30x10K0, 35x10K0, 40x10K0, 50x1000, 56G10K0 Introduction TM Vero represents a revolutionary advancement in chip on board COB light source technology and innovation. These new LED light

AN 7823

Abstract: l2930
Contextual Info: Supertexinc. HV257 Preliminary Information 32-Channel High Voltage Sample and Hold Amplifier Array Features General Description □ 32 independent high voltage amplifiers The Supertex HV257 is a 32-channel high voltage sample and hold amplifier array integrated circuit. It operates on a single high

PHILIPS CNW82

Abstract: philips cnw83 BS415 BS7002 CNW82 CNW83 TRANSISTOR WM 9 transistor wm
Contextual Info: 7110fi5ti OOB O ^ t i ö B I P H I N MIE D PHILIPS INTERNATIONAL 7 - V Philips S em ico n d uctors / - 8 3 P ro du ct s p ecificatio n Wide body, high isolation optocouplers CNW82/CNW83 FEA TUR ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

DIODE 1N4004

Abstract: 1N4004 1N5817 HV257 HV257FG HV257X
Contextual Info: HV257 HV257 Preliminary Information 32-Channel High Voltage Sample and Hold Amplifier Array Features General Description ❑ 32 independent high voltage amplifiers The Supertex HV257 is a 32-channel high voltage sample and hold amplifier array integrated circuit. It operates on a single high