830 CE Search Results

Contextual Info: CERAMIC BAND PASS FILTER The content of this specification may change without notification 12/08/2011 800MHz to 950MHz P/N CBPF-830-10A CBPF-875-10A CBPF-830-10B CBPF-875-10B CBPF-830-10C CBPF-875-10C CBPF-830-10D CBPF-875-10D CBPF-897-24 CBPF-842-24 CBPF-902.5-25A

Contextual Info: TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : 5 Peak wavelength: p = 830 nm • • • • High reliability

Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm

JAY TRONICS

Contextual Info: C ir % A v w iH W v ^ Coiporalion^ SIGNAL PROCESSING EXCELLENCE NORTH AMERICAN MANUFACTURERS REPRESENTATIVES ALABAMA Huntsville EMA EMA Tel: Fax: 205-830-4030 800-633-2920 AL only 205-830-1947 ARIZONA SOUTHWEST TECHNICAL SALES Tel: Fax: 602-893-1209 602-893-1312

VSMG2720

Abstract: VSMG2720-GS08 VSMG2720-GS18
Contextual Info: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability

VSMG2700

Abstract: VSMG2700-GS08 VSMG2700-GS18
Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability

TSHG5510

Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm

830MG

Abstract: 82830MG intel 830 STR d 5441 830M Chipset DRC encoder 153 121 - 256 a19 d18 hue nv 82830 830m design guide lcd gba
Contextual Info: R Intel 830 Chipset Family: 82830 Graphics and Memory Controller Hub GMCH-M Datasheet January 2002 Order Number: 298338-003 ® Intel 830 Chipset Family R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

0x00000000-0x00007FF

Abstract: mb86833 MB86930 0x00000148 sparclite asi bus DRAM controller MB86832
Contextual Info: SPARClite 830 Series Embedded Processor User’s Manual MB86833 OCTOBER 1997, Edition 1.0 FUJITSUMICROELECTRONICS, INC. CONTENTS Chapter 1: Overview of MB86833 1.1 General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

cdg308ak

Abstract: 309CJ CDG309BK CDG308CJ
Contextual Info: caloric REPRESENTED Quad Monolithic SPST CMOS/D-MOS Analog Switches by CORPORATION itchiiical Consultants V 415 830-0829 CDG308, CDG309 / CDG4308, CDG4309 FEATURES DESCRIPTION • • • • • • Calogic’s CMOS/DMOS Analog Switches feature high-speed,

SMB 345

Contextual Info: RF Coax Connectors SMB Connectors, 50 Ohm Straight Plugs 6.35 [.250] Max. 21.10 [.830] Max. Center Contact Plating RG/U Cable 178, 178A, 178B, 196, 196A 174, 316, 188, 188A 179, 179A, 179B, 161, 187, 187A, BELDEN 9221 RG 316, 188 Double Braid Right-Angle Plugs

J-STD-020B

Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

TSHG8400

Abstract: TSOP35D25 10klux
Contextual Info: TSOP35D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm

LFCN-630D

Contextual Info: Ceramic Low Pass Filter LFCN-630D+ Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 1 50 100 630 700 830 840 865 900 935 955 970 1000 1020 1040 1050 1065 1130 1250 1360 1625 2015 2500 3000 3500 4000 4500 5000 5400 6000 6500 7000 7500 8000 9000 10000

injection laser diode

Abstract: EYP-TPA-0830-01000-4006-CMT04-0000 830nm
Contextual Info: Version 0.90 18.09.2008 page: 1 from 4 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL PRELIMINARY SPECIFICATION BAL Tapered Amplifier EYP-TPA-0830-01000-4006-CMT04-0000 General Product Information Product Application 830 nm Tapered Amplifier

TSOP75D25

Abstract: TSAL6200 TSOP75D ir receiver smd diode 2 pin
Contextual Info: TSOP75D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm

MF1053S-2

Contextual Info: MF1053S-2 FOR DIGITAL MOBILE TELEPHONE, Rx MF1053S-2 DESCRIPTION FEATURES MF1053S-2 TYPICAL CHARACTERISTICS This SAW filter for the receiving RF circuit of digital mobile communication equipment operating at 810 MHz ~ 830 MHz. 1. SMD package insures small size, lightweight.

Contextual Info: Under development ● New product GH4837A1TG Infrared Laser Diode Infrared Eye-safe Laser Diode • Features ■ Absolute Maximum Ratings Tc=25℃ *1 (1) Wavelength : 830 nm(Typ.) Symbol Ratings Unit Forward Current(CW) Iop 1 A (3) Φ5.6mm CAN package

Contextual Info: THS4304 www.ti.com SLOS436A – MARCH 2004 – REVISED JULY 2004 Wideband Operational Amplifier FEATURES APPLICATIONS • • • • • • • • • • Wide Bandwidth: 3 GHz High Slew Rate: 830 V/µs Low Voltage Noise: 2.4 nV/√Hz Single Supply: 5 V, 3 V

Contextual Info: ? LASER DIODE INC 1EE D I 5302^05 ÜGGG4M4 Ö | -p_ ca •■=■e ] IRE-830 SERIES LASER DIODE, INC. HIGH RADIANCE, HIGH SPEED 830nm SURFACE EMITTING LED FEATURES High Output Power: 1mW into 100/140 Fiber ► High Speed: Suitable for > 100 Mbps NRZ Operation

SAWEP880MCL0F00

Abstract: smd diode marking 325 murata SAW
Contextual Info: SAW FILTER FOR W-CDMA Dual Rx Murata part number : SAWEP880MCL0F00 (fc=880MHz) Feature 1. Low Insertion Loss (2.0 dB max.) 2. High Attenuation (at 830 to 840 MHz ; 45 dB min.) 3. Ultra Small SMD package (2.0x1.6mm package) 4. Dual type Test Circuit 50Ω

74as30

Contextual Info: SN54ALS30Â, SNS4AS30, SN74ALS30A, SN74AS30 8-INPUT POSITIVE-NAND GATES M AR C H 1 9 8 4 — REVISED M A Y 1 9 8 6 SN 54A LS30A , SN 54A S30 . . . J PACKAGE SN 74A LS30A . S N 74A 830 . . . D OR N PACKAGE Package Options Include Plastic "S m all O utline " Packages, Ceramic Chip Carriers,

IC OZ 9926

Contextual Info: Surface Mount Voltage Controlled Oscillator 5V Tuning for PLL IC’s ROS-970+ 830 to 970 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pushing • Low Pulling • Aqueous washable CASE STYLE: CK605 PRICE: $19.95 ea. QTY 5-49