82784 Search Results

FDB3632

Abstract: FDP3632 FDI3632 tc144e
Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

2SK932

Abstract: CPH5901 2SC4639 ITR10329 ITR10330 npn fet
Contextual Info: CPH5901 注文コード No. N 8 2 7 8 A 三洋半導体データシート 半導体ニューズ No.N8278 とさしかえてください。 CPH5901 TR : NPN エピタキシァルプレーナ型シリコントランジスタ FET : N チャネル接合型シリコン電界効果トランジスタ

ASTM B633 zinc plating

Abstract: A108 A109 B633 MIL-T-10727
Contextual Info: 7 DRAWING MADE IN T H I R D A N G L E T HI S DRAWING IS UNPUBLISHED COPYRIGHT 6 5 4 3 2 1 PROJECTION 19 R ELEASED FOR P U B L I C A T I O N BY AMP INCORPORATED. ALL LÛC ,19 INTERNATIO NAL RIG H T5 BD RESERVED. D IST 77 REVISIO NS ZONE LTR DESCRIPTIO N

CPH5901

Contextual Info: Ordering number : EN8278B CPH5901 N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 http://onsemi.com Features Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly

FDB3632

Abstract: FDI3632 FDP3632 tc144e
Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

FDB3632

Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

TA3705

Contextual Info: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

A108

Abstract: A109 B633 MIL-T-10727
Contextual Info: 7 DRAWING THIS MADE IN THIRD DRAWING ANGLE 15 UNPUBLI5HED COPYRIGHT 6 5 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL <3> 4 3 2 RIGHTS DI ST LOC 19 GP RESERVED. REV I 5 I0N 5 00 LTR ZONE D E S C R I R T I ON D REDRAW S 0 B 5

Contextual Info: 7 TH IS DRAWING COPYRIGHT IS U N P U B LIS H E D . - RELEASED FOR 5 PUBLICATION ALL RIGHTS RESERVED. By D C -MATING FACE 270+.0 1O T Y P . 2 l^326±.0 657+. O1O TYP. (2) 1O T Y P .(2) :0 60 TYP. ”A M P ” , P A R T N O . & D A T E C O D E , M A R K E D

Contextual Info: 7 8 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED ART ALL C O P Y R IG H T - B Y TYC O E LE C T R O N IC S FOR P U B L IC A T IO N R IG H T S 5 6 - RESERVED. C O R P O R A TIO N . c •MATING FACE 2 7 0 + .0 1O T Y P . 2 0 3 2 6 + .O 1O T Y P .( 2 )

FDP3632

Abstract: 82784 FDB3632 FDI3632
Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 83nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

marking 1a

Abstract: CPH5901 2SC4639 2SK932 82786
Contextual Info: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

Contextual Info: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting