8237 DIODE Search Results

VSSX1284

Contextual Info: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • Lead Pb -Free available Product is pictured larger than actual size to show detail • Standard QSOP package (28 pins) - JEDEC mo-137AF • 17 terminating lines

VSSX1284

Abstract: 8237 diode 15KV VSSX1284AT VSSX1284B
Contextual Info: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • One sophisticated, integrated Thin Film technology solution • Up-graded IEEE 1284 parallel port termination, pull-up with Product is pictured larger than

Vishay Electro-Films

Abstract: electro-films 800w class d circuit diagram schematics dc-dc converter 50kW 100kW STR 61001 carbon resistor Dielectric Constant Silicon Nitride VISHAY MARKING SG "beryllium oxide" Foil Resistors
Contextual Info: VISHAY I N T E RT E CH N OLO G Y , I N C . INTERACTIVE data book THIN FILM PRODUCTS vishay Electro-films vsD-db0005-0404 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

1N4010

Abstract: 8245 diode 1N3501
Contextual Info: Zero-TC Reference Diodes 49.6 6.5 6.5 6.5 6.5 6.2 6.2 6.2 6.2 6.2 Zzt <C2 IR uA) VR I Toi. I (V) [(+/-%) 0.005 160 0.001 12 0.0005! 12 0.001 12 0.001 12 ID O 0.04 0.0005 0.04 0.001 0.04 0.001 0.04 0.0005! 0.01 2 2 0,01 O 6.4 0.003 0.01 0.01 0.005 0.002 0.001

MS146818B

Abstract: 440MX 82440MX W8237 82443MX CF9H interface 8254 with 8086 443BX 82C37 82C54
Contextual Info: 82443MX PCIset

Processor Host Bus Support — Optimized for the Intel Pentium® II and mobile Celeron processors at 66 MHz — GTL+ Bus Driver Technology Integrated DRAM Support — 8 MB to 256 MB using 16-/64/128-Mb Technology — Standard and Registered

DCM7 DIODE

Abstract: HD13S motorola mc55 DIODE CH71 82440MX mc60 speed controller 440MX STR M 6523 DCM7 MCEE
Contextual Info: intei 82443MX100 PCIset Datasheet • ■ Processor Host Bus Support — Optimized for the Intel mobile Pentium® II and the mobile Celeron processors at 100 MHz or 66 MHz — GTL+ Bus Driver Technology Integrated DRAM Support — 8 MB to 256 MB using 16-Mb,

128/AC 128 pnp transistor

Abstract: interfacing of 8237 with 8086 str 6628 440MX 443BX 82440MX 82443MX PCIset Electrical and Thermal Specification 8272A floppy disk controller block diagram CK100 pnp wcb valid bit
Contextual Info: 82443MX100 PCIset Datasheet § Processor Host Bus Support  Optimized for the Intel mobile Pentium® II and the mobile Celeron processors at 100 MHz or 66 MHz  GTL+ Bus Driver Technology § Integrated DRAM Support — 8 MB to 256 MB using 16-Mb,

Contextual Info: in te i 82443MX PCIset + Processor Host Bus Support — System Tim er based on 82C54 — O ptim ized fo r the Intel — Pentium ® II and m obile Celeron processors at 66 MHz Real Tim e C lock w / 256 Bytes Battery-backed RAM — X-bus Support for SIO, KBCX

8237 DMA Controller

Abstract: 8237 DMA Controller data sheet pci to isa bridge intel 8272 INTEL 845 MOTHERBOARD CIRCUIT diagram 82C59 DMA Controller 8237 Intel 8237 dma controller 82371AB 82C37
Contextual Info: 82371AB PCI ISA IDE Xcelerator PIIX4 8.0 PCI/ISA Bridge Functional Description This section describes each of the major functions on the PIIX4 PCI-to-ISA Bridge including the memory and I/O address map, DMA controller, interrupt controller, timer/counter and X-Bus

mar 722

Abstract: Vishay Military and Aerospace
Contextual Info: Introduction Vishay Foil Resistors Precision Bulk Metal Foil Fixed Resistors INTRODUCTION Bulk Metal® Foil technology was developed by Vishay in 1962 as a progression of the Company’s strain gage and stress analysis expertise. That technical development evolved into a Fortune 1000 company listed on the New York

Contextual Info: Introduction Vishay Foil Resistors Precision Bulk Metal Foil Fixed Resistors INTRODUCTION Bulk Metal® Foil technology was developed by Vishay in 1962 as a progression of the C om pany’s strain gage and stress analysis expertise. That technical development evolved into a Fortune 1000 company listed on the New York

24N50

Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH

BPW16N

Abstract: CQY 24
Contextual Info: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

rdc 19230

Abstract: tag 9035 PTC 2272 CS4281 SBR 2512 programmable divider circuit tc 8052 7492 PIN CONFIGURATION ICL 7211 data sheet CS4280-CM 9721 220
Contextual Info: Confidential Draft 3/7/00 CS4281 Programming Manual ft Revision 1.17w D ra 3/7/00 P.O. Box 17847, Austin, Texas 78760 512 445 7222 FAX: (512) 445 7581 http://www.cirrus.com Copyright  Cirrus Logic, Inc. 2000 (All Rights Reserved) MAR’00 DS308PRM1 1

8239

Abstract: BPW16N CQY36N
Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

CQY36N

Abstract: BPW16N ic 8236 8237 diode
Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW16N

Abstract: CQY36N
Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

BPW16N

Abstract: CQY36N
Contextual Info: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of

CQY36

Contextual Info: BPW16N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

ic 8237

Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

BPW16N

Abstract: CQY36N
Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

Contextual Info: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily

FDS4465

Abstract: 8237 diode
Contextual Info: FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate