8200 DIODE Search Results

PC97551

Abstract: lcd acer monitor circuit diagram ICS954310BGLF 39VF080 LCD INVERTER DIAGRAM acer PA1900-04 china DVD player lens circuit diagram Laptop AC adapter 19V 90w ALC833 samsung hdd f3
Contextual Info: TravelMate 8200 Service Guide Service guide files and updates are available on the ACER/CSD web. For more information, please refer to http://csd.acer.com.tw PRINTED IN TAIWAN II Revision History Please refer to the table below for the updates of Travelmate 8200 service guide.

Contextual Info: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200

winpath

Abstract: Wintegra wintegra winpath AN005 M66EN REQ64 WinPATH 4
Contextual Info: Interfacing the PowerSpan IITM with the Wintegra WinpathTM 80A1010_AN005_05 November 4, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability

CA91L750-100IL

Abstract: cdma fwt 7400 BOOK CA91L750 interface 740 IBM MPC7400 MPC8260 PC-100 PPC7400 917D
Contextual Info: PowerPro User Manual 80A5000_MA001_10 November 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

MP 130B

Abstract: IBM750FX TSI110 32G nand ppc 750fx MPC7447 MPC7448 MPC7457 PowerPC 750FX Tsi110167CL
Contextual Info: Tsi110 User Manual 80E5000_MA001_05 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

Contextual Info: Tsi384 Evaluation Board User Manual 60E1000_MA001_08 September 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

tsi108

Abstract: Tsi109 tsi108-200cly compactpci 174 Tsi109TM Tundra Semiconductor tsi108 IVPR12 TSI108-200CL Tundra tsi108 Tsi109-200ILY
Contextual Info: Tsi108/Tsi109 User Manual 80B5000_MA001_08 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

SOIC127P600

Abstract: TSSOP65P64-16 CAPC0402 MAX4372FEUK T FB0603
Contextual Info: Tsi381 Evaluation Board User Manual 60E2000_MA001_03 September 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

winpath

Abstract: Wintegra WinPATH network diode t418 t428 motorola CA91L8200B CA91L8260B-100IE HSBGA 292 interface 740 IBM PowerPC 740 reference manual
Contextual Info: PowerSpan II User Manual 80A1010_MA001_09 November 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

5SDD 54N4000

Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability

TCCH-80

Abstract: zo 107 GU1041 zo 107 MA
Contextual Info: Very Wideband RF Choke TCCH-80+ 50 to 8200 MHz 50Ω Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

zo 107 MA

Abstract: TCCH-80 zo 107 GU1041 PL-147
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Storage Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.

hp 1458

Abstract: optocoupler 1458 hp 8200 diode HSSR-7110 HSSR-8060 HSSR-8200 HSSR-8400 HP 2000 optocoupler hp pin diode
Contextual Info: H 200-V/160 Ohm, 1 Form A, Small-Signal Solid State Relay Technical Data HSSR-8200 Features Applications Description • Compact Solid-State Bidirectional Signal Switch • Normally-Off Single-Pole Relay Function 1 Form A • Very High Output OffImpedance: 10,000

Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

zo 107 MA

Abstract: zo 107 ZO 109
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

zo 107

Abstract: zo 107 MA ZO 109 zo 109 ma
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

TCCH-80

Contextual Info: Very Wideband TCCH-80+ TCCH-80 RF Choke 50Ω 50 to 8200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.

Contextual Info: Very Wideband TCCH-80+ TCCH-80 RF Choke 50Ω 50 to 8200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ.

Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

zo 107

Abstract: zo 107 MA ZO 109 zo 109 ma
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

zo 107 MA

Abstract: zo 107 ZO 109
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Operating Temperature Features • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz