8192WORD Search Results

10ST10

Abstract: lq55
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

NE as7

Abstract: G1712
Contextual Info: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type

ST7035

Abstract: sanyo tas 2110 LC3564S LC3564SM LC3564SS LC3564ST ST-70 dip28 600mil package
Contextual Info: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM O verview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type

MB81C79

Contextual Info: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a

Contextual Info: Ordering num ber: EN4794B SANYO CMOS LSI N0.4794B LC3564S. SS, SM , ST-70/85/10 i 64K 8192words X 8 bits SRAM Overview T he LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs w ith a n 8192-word X 8-bit organization. These SRAMs are full CMOS type

Contextual Info: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

cxk5863b

Abstract: CXK5863BM
Contextual Info: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - M ilitary: 35/45ns (max.) - Com m ercial: 20/25/35/45ns (max.) Low-power operation - ID T70825S - A ddress based flags fo r b u ffer control

Contextual Info: in tj 5164S/L 8K x 8-BIT CMOS STATIC RAM 5164S/L-07 5164S/L-10 Units Address Access Time t^A 70 100 ns Chip Select Access Time (tAcs) 70 100 ns Output Enable Access Time (îq e ) 35 55 ns • Static Operation — No Clock/Refresh Required ■ Power Down Mode

Contextual Info: HD404618/H D404616/ HD404614/HD4074618 Description — 5 us fOSC = 800 kHz This microcomputer unit was designed with the p o w erfu l and e ffic ie n t arc h itec tu re o f the HMCS400 family. The MCU incorporates a highp recision dual-tone m ultifrequency (DTM F)

Contextual Info: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host

Contextual Info: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­

6264alp

Abstract: 6264ALSP-10
Contextual Info: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •

Contextual Info: microCMOS NMC6164 8192 x 8-Bit Static RAM General Description Features The NMC6164 is a 8192-word by 8-bit new generation s ta tic RAM. It is fabricated w ith N a tio n a l's proprietary m icroC M O S do uble-polysilicon tech nolog y w hich com ­ bines high pe rform ance and high de nsity w ith low power

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

Contextual Info: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759A Z Rev. 1.0 Aug. 29, 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable

Contextual Info: AKM 6264A Series 8192-word x 8-bit High Speed CMOS Static RAM FEATURES A K M 6 2 6 4 A P Series Low P ow er S ta n d b y S tan db y: L o w Power O peration O perating: • Fast access T im e 1 0 0 n s /1 2 0 n s /1 5 0 n s m a x . • Single + 5 V S upply

QP7C261-25LI

Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Contextual Info: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed

28P2W-C

Abstract: M66255FP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HN58C66P-25

Abstract: Hitachi DSA00164
Contextual Info: HN58C66 Series 8192-word x 8-bit CMOS Electrically Erasable and Programmable CMOS ROM ADE-203-375F Z Rev. 6.0 Apr. 12, 1995 Description The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS

Contextual Info: MITSUBISHI LSIs M5M5178P,J-35,-45,-55 6 5 S 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 8 1 9 2 w ord by 8-b it static RAM s, fabri­ cated w ith the high performance C M OS silicon gate MOS

HN58S65ATI-15

Abstract: Hitachi DSA00197
Contextual Info: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-670 Z Preliminary Rev. 0.2 Sep. 4, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and reliability by employing advanced MNOS

Contextual Info: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Rev. 0.2 Preliminary Aug. 29, 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word X 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced