81007 Search Results

Contextual Info: STM 81007X 1550 nm Laser in Receptacle Package, Medium Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

SDAXA

Abstract: gus manual IR3Y38M PG12864LRF-NRA PEAK tray drawing BUK 445 equivalent nK13
Contextual Info: SHARP • 81007=18 0 0 3 2 0 6 k bSO B SHARP IR 3 Y 3 8M ♦Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

Contextual Info: SHARP ELEK/ MELEC DIV 1SE D | 81007=10 0003141, 0 | GP1A40 Photointerrupter _ . Connector Terminal Type OPIC Photointerrupter with Lever Type Actuator GP1A40 • T-4 1 -7 3 ■ Features O u tlin e D im ensions

Contextual Info: SHARP E L E K / MELEC D IV 7 ' 7 3 ‘ 5 “3 1SE D | 81007^8 O O G aO ta o | High Speed Dual Comparator IR9319/IR9319N IR9319/IR9319N • Description ■ The IR9319/IR9319N is a high speed dual compa­ rator, which is designed to operate from a wide range of supply voltage as well as a signal 5V supply.

TSAL5100 Vishay

Abstract: TSAL5100
Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

AMP PBT connector 7 way

Abstract: EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E
Contextual Info: Amphenol 2010 Amphenol 12-C3 Circular Interconnects Products for Military, Aerospace and Harsh Environments Circular Interconnects • Aluminum • Stainless Steel/Firewall • Composite • Printed Circuit Board Connectors • High Speed Connectors • EMI Filter/Transient

DTS27

Contextual Info: DIODE TRANSFER SWITCHES SERIES DTS 0.025 - 18 GHz GENERAL INFORMATION Series DTS transfer switches allow power entering two input ports, A and B, to exit from output ports C and D respectively, or by appropriate switching, to exit from ports D and C respectively. A functional schematic of a transfer is shown in Fig. 1, and a typical circuit is shown in Fig. 2.

Contextual Info: CUSTOM CAPABILITY COMBINER/ISOLATOR DUPLEXER W/DIVIDER MODEL AY-C10 POWER DIVIDER SPECIFICATIONS In-Phase: 2-Way Frequency: 1010-1050 MHz Loss: ≤0.2 dB, above 3 dB split Isolation: 20 dB Minimum Phase Balance: ±3° VSWR: 1.25:1 Power: Peak: 500 W, 1% Duty Cycle

SWM-1300

Abstract: pin diode microstrip
Contextual Info: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS SP3T DIODE SWITCH REFLECTIVE MODEL SWM-1300 0.5–18.0 GHz GENERAL INFORMATION The Model SWM-1300 SP3T PIN Diode switch operates over the full frequency range 0.5–18.0 Ghz in a single unit. KDI/Triangle has integrated microstrip soft substrate with thick film hybrid drivers, which are

RT 179

Abstract: RGX-179 5M2397-002 S280W502-1 RGX179 RT179 ST5M1323-001 Axon TWINAX ST5M1212-002 TRX179
Contextual Info: Twinax Contacts for Subminiature Cylindricals general description, application data - size 10 &12 Amphenol Twinax Contacts were designed for use with twinax cable in Data Bus systems. Twinax contacts provide the following benefits: • Protection from magnetic interference

Contextual Info: MODULATORS, BI-PHASE SERIES MP 0.2–18 GHz GENERAL INFORMATION Bi-Phase modulators shift the phase of an RF signal y 180° b upon appl -i cation of aTTL logic signal Logic . 0 produces a re erence f 0° phase and logic 1 changes the phase 18 °.0 Bi phase modulators can be used in ca - r

Cannon connectors

Contextual Info: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d

Contextual Info: BROADBAND SP8T DIODE SWITCH SERIES TB800 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBm operational. Consult factory for high power options. DC Requirements:

74ACT540

Abstract: RESISTORS-470 OHMS SWX-01 SWX-02 SWX-03 SWX-04 SWX-05 capacitors smd ghz smd diode marking U1
Contextual Info: HIGH ISOLATION–SURFACE MOUNT PIN DIODE SWITCHES MODULES SERIES SWX 0.2–2.4GHz FEATURES • Full Cellular Frequency Coverage: 200–2400 MHz (Ideal for PCS Applications) • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs

SQ0003

Abstract: SQ-0003
Contextual Info: PCS SURFACE MOUNT CERAMIC PHASE SHIFTER MODEL SQ0003 1930-1990 GHz GENERAL INFORMATION KDI’s new ceramic surface mount analog-phase shifter provides 0-120 degree phase shift minimum over the 1930-1990 MHz frequency band. The maximum insertion loss and VSWR of the unit is 2.8 dB; the maximum VSWR is 1.7. Phase flatness is specified at ϩ/Ϫ9 degrees maximum, and the insertion loss change verses phase shift is well within

ATN-4072

Abstract: kdi 64537
Contextual Info: BROADBAND SURFACE MOUNT ANALOG–CERAMIC ATTENUATORS, PIN DIODE SERIES ATN-4072 500–2000 MHz DESCRIPTION KDI/t riangle Model A TN-4072 is a surf ace mount atte n uator featur ing a continuous atten uation changev ersus controlv oltage. The h ybr id design

FP 310

Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
Contextual Info: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26

51004G

Abstract: laserdioden
Contextual Info: Semiconductor Devices for Fiber* Optic Systems and High-Power Lasers Bauelemente für die LWL-Technik und Leistungslaser Emitter für Glasfaseranwendungen Emitters for glass fiber applications InGaAsP/lnP-IRED für das 2. Durchlaßfenster 1300 nm rop= -4 0 C . +85 0 , Bauteile nach Bellcore Spezifikation qualifiziert.

GEM X 365

Abstract: diode ed 85
Contextual Info: 81007G/N SIEMENS LOW POWER 1500 lim Laser in Receptacle Package Dimensions in inches mm 81007G (13-2) .739 (18.8) i_ spacing .1 (2.54) .283 (7.2) 267 (6.8) 53 A (13.6) .519(13.2) 0) .098 (2.5) .083(2.1) Mi 365 (9.3) 350 (8.9) IS 0) '+ k .613(15.6)

TSAL5100

Contextual Info: TSAL5100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

whdi

Abstract: LR3740 BF 0270 L202H 36 TI BBL
Contextual Info: SHARP ELEK/ M ELEC 1 SE o I D IV a ia o T T a Synchronous Signal G enerator for 2 /3 " C C D a a o ib M a a | LR 3740/L R 3740N T-41-55 LR3740/LR3740N • Pin Connections Description The LR3740/LR3740N is a CMOS synchronous signal generator LSI which generates TV synchro­

Contextual Info: ATTENUATORS, PIN DIODE SERIES DF & FF “PHASE-FREE” 0.25–18 GHz GENERAL INFORMATION: KDI/Triangle’s phase free Pin diode attenuators change the amplitude of a microwave signal with matched low VSWR over the full attenuation range, and with minimum phase shift change. The units are supplied with

Contextual Info: 12-WAY DIVIDER, POWER MODEL D311NS 800-2000 MHZ ELECTRICAL SPECIFICATIONS Frequency Range: 800–2000 MHz Insertion Loss: 1.5 dB Isolation: 18 dB VSWR: In: 1.5 • 1 typ. Out: 1.3 • 1 typ. Amplitude Balance: ±0.3 dB Phase Balance: ±6˚ Power: +30 dBm typ. as divider

FERRITE TOROIDAL CORE DATA

Contextual Info: CUSTOM DESIGN CAPABILITY FILTERED POWER DIVIDERS PSX SERIES FEATURES • • • • • • Utilizes “Ferriteless” Printed Circuit Lumped Component Design Available in Fixed Frequencies from 5-300 MHz Reactive Filtering Characteristics Provide Out of Band Rejection