80N60BD1 Search Results

80n60

Abstract: O M 335 80N60B PF650
Contextual Info: Advance Technical Information IGBT with Diode IXSN 80N60BD1 Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 160 A = 2.5 V C G E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A

80n60

Abstract: 80N60BD1 2X6-10 IXSN80N60BD1 2X61-06A
Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

80n60

Abstract: Siemens DIODE E 1240 80N60B 60-06A 6006A
Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

Siemens DIODE E 1240

Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: IXSN 80N60BD1 Symbol Test Conditions g fs IC = 60 A; VCE = 10 V, Note1 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. 40 52 S 6600 pF 660 pF C res 196 pF Qg 240 nC 85 nC 90 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH,

Contextual Info: IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E Symbol Test Conditions V CES TJ = 25°C to 150°C E Maximum Ratings 600 miniBLOC, SOT-227 B E153432 E V G V CGR