80LJ Search Results
80LJ Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JJV07D180LJ
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Jiangsu JieJie Microelectronics Co Ltd | Disc varistors with operating voltages from 11 to 510 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 to 510 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.JJV07D Disc Varistors offer 11 to 510 V RMS operating voltage, fast <25ns response, high surge current and energy absorption, low clamping voltage, and low capacitance for reliable transient overvoltage protection in various electronic applications.Disc varistors with operating voltages from 11 to 510 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection. | Original | ||||
JJV20D180LJ
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Jiangsu JieJie Microelectronics Co Ltd | Disc varistors with operating voltage from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 to 1000 V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.JJV20D series disc varistors offer surge protection with operating voltages from 11 to 1000 V RMS, fast response time under 25ns, high energy absorption, low clamping voltage, and capacitance values suitable for digital circuits.Disc varistors with operating voltage from 11 V RMS to 1000 V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltage from 11 V RMS to 1000 V RMS, fast response time less than 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection. | Original | ||||
JJV05D180LJ
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Jiangsu JieJie Microelectronics Co Ltd | Disk varistor with operating voltages from 11V to 460V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disk varistor with operating voltages from 11V to 460V RMS, response time under 25ns, high surge current and energy absorption capability, low clamping voltage and capacitance, suitable for transient overvoltage protection in various electronic applications.Disk varistor with operating voltages from 11V to 460V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disk varistor with operating voltages from 11V to 460V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection. | Original | ||||
JJV14D180LJ
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Jiangsu JieJie Microelectronics Co Ltd | Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11 V RMS to 1000 V RMS, fast response time under 25 ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection. | Original | ||||
JJV10D180LJ
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Jiangsu JieJie Microelectronics Co Ltd | Disk varistor with operating voltages from 11V to 680V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11V to 680V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11V to 680V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection in electronic circuits.Disc varistor with operating voltages from 11V RMS to 680V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection.Disc varistors with operating voltages from 11V RMS to 680V RMS, fast response time under 25ns, high surge current and energy absorption capability, low clamping voltage, and low capacitance for transient overvoltage protection. | Original |
80LJ Price and Stock
Nexperia BUK9Q45-80LJBUK9Q45-80L/SOT8002/MLPAK33 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BUK9Q45-80LJ | Digi-Reel | 3,000 |
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| BUK9Q45-80LJ | Cut Tape | 3,000 |
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| BUK9Q45-80LJ | Tape & Reel | 3,000 | 3,000 |
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BUK9Q45-80LJ | 480 |
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BUK9Q45-80LJ | Cut Tape | 5 |
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| BUK9Q45-80LJ | Tape & Reel | 100 |
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Nexperia BUK9Q28-80LJBUK9Q28-80L/SOT8002/MLPAK33 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BUK9Q28-80LJ | Tape & Reel | 3,000 |
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Buy Now | ||||||
| BUK9Q28-80LJ | Digi-Reel | 1 |
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| BUK9Q28-80LJ | Cut Tape | 1 |
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BUK9Q28-80LJ |
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Get Quote | ||||||||
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BUK9Q28-80LJ | Cut Tape | 1 |
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| BUK9Q28-80LJ | Tape & Reel | 100 |
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Nexperia BUK9Q17-80LJBUK9Q17-80L/SOT8002/MLPAK33 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BUK9Q17-80LJ | Cut Tape | 1 |
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Buy Now | ||||||
| BUK9Q17-80LJ | Tape & Reel | 3,000 |
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Buy Now | |||||||
| BUK9Q17-80LJ | Digi-Reel | 1 |
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Buy Now | |||||||
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BUK9Q17-80LJ |
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Get Quote | ||||||||
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BUK9Q17-80LJ | Tape & Reel | 100 |
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Buy Now | ||||||
| BUK9Q17-80LJ | Cut Tape | 1 |
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Lattice Semiconductor Corporation ISPLSI 1016E-80LJIIC CPLD 64MC 15NS 44PLCC |
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ISPLSI 1016E-80LJI | Tube |
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Lattice Semiconductor Corporation ISPLSI 2064A-80LJ84IC CPLD 64MC 15NS 84PLCC |
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ISPLSI 2064A-80LJ84 | Box |
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80LJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Lattice ispLSr 1032 H I Semiconductor •■■ Corporation In-System Programmable High Density PLD Functional Block Diagram Features • HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs |
OCR Scan |
Military/883 84-Pin 1032-60LJ 1Q32-6GLT 100-Pin 1032-60LJI 1032-60LTI | |
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Contextual Info: Latticc ispLSI and pLSI 2032 ; ; ; Semiconductor •■■ Corporation High Density Programmable Logic Functional Block Diagram Features • HIGH DENSITY PROGRAMMABLE LOGIC — — — — — 1000 PLD Gates 32 I/O Pins, Two Dedicated Inputs 32 Registers High Speed Global Interconnect |
OCR Scan |
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plsi1016
Abstract: 1016j ispLSI1016 1016E
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OCR Scan |
1016E 44-Pin QDD53A5 plsi1016 1016j ispLSI1016 1016E | |
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Contextual Info: Lattice* ispLSI andpLSI 1016E “ ; Semiconductor •■■Corporation High-Density Programmable Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 2000 PLD Gates — 32 I/O Pins, Four Dedicated Inputs — 96 Registers — High-Speed Global Interconnect |
OCR Scan |
1016E 1016E -100LJ -80LJ -80LT | |
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Contextual Info: International IOR Rectifier PD - 9 .1461C IRG4PC30U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter |
OCR Scan |
1461C IRG4PC30U O-247AC O-247AC | |
plsi1016Contextual Info: Lattice ; " Semiconductor •■■Corporation ispLSI and pLSI 1016E High-Density Programmable Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — 2000 PLD Gates 32 I/O Pins, Four Dedicated Inputs 96 Registers High-Speed Global Interconnect |
OCR Scan |
1016E plsi1016 | |
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Contextual Info: Lattice \ ispLSr and pLSr 1016E C orporation10'' High-Density Program m able Logic Functional Block Diagram Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 2000 PLD Gates — 32 I/O Pins, Four Dedicated Inputs — 96 Registers — High-Speed Global Interconnect |
OCR Scan |
1016E orporation10' 1016E -100LJ -80LJ -80LT | |
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Contextual Info: Lattice* ispLSI andpLSI 1016E “ ; Semiconductor •■■Corporation High-Density Programmable Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 2000 PLD Gates — 32 I/O Pins, Four Dedicated Inputs — 96 Registers — High-Speed Global Interconnect |
OCR Scan |
1016E 44-Pin |