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    80JUS Search Results

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    80JUS Price and Stock

    KEMET Corporation

    KEMET Corporation CGP1C680JUSDAAWL35

    CER DISC 68PF 4000 SL 5%
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    DigiKey CGP1C680JUSDAAWL35 Bag 20,000
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    KEMET Corporation CGP2C180JUSDCAWL35

    CER DISC 18PF 4000 SL 5%
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    DigiKey CGP2C180JUSDCAWL35 Bag 20,000
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    KEMET Corporation CGP5C180JUSDCAWL25

    CER DISC 18PF 4000 SL 5%
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    DigiKey CGP5C180JUSDCAWL25 Bag 12,000
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    KEMET Corporation CGP5C680JUSDBAWL50

    CER DISC 68PF 4000 SL 5%
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    KEMET Corporation CGP7C180JUSDBAWL35

    CER DISC 18PF 4000 SL 5%
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    DigiKey CGP7C180JUSDBAWL35 Bag 20,000
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    80JUS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TO SH IBA TC9327AF TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327AF DTS MICROCONTROLLER DTS-21 The TC9327AF is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.


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    TC9327AF DTS-21) TC9327AF 230-MHz 80-pin, LQFP80-P-1212-0 PDF

    t2d02

    Abstract: 100011
    Contextual Info: TOSHIBA TC9327AF TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327AF DTS MICROCONTROLLER DTS-21 The TC9327AF is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.


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    TC9327AF DTS-21) TC9327AF 230-MHz 80-pin, t2d02 100011 PDF

    A2415

    Contextual Info: 2 S K 2 1 4 7 - 1 FUJI P O W E R M O S - F E T R N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V cs= ± 3 0V Guarantee


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    20Kf2) A2415 PDF

    A2103

    Contextual Info: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee


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    2SK1017-01 ES7H30 A2103 PDF

    f11u

    Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
    Contextual Info: SK1916-01R FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F - I I I Features S E R I E S Outline Drawings ►High speed switching ►Low on-resistance ►Mo secondary breakdown ►Low driving power ►High voltage 'V Ge; = ±30V Guarantee •Avalanche-proof


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    2SK1916-01R f11u 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267 PDF

    2SJ73

    Abstract: 2SJ473-01L JEDEC-TO-252
    Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. I DWG. NO. DATE 1//3 Y 0 2 57-R -004 a 1 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


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    2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 80/is 0257-R-003a 2SJ73 JEDEC-TO-252 PDF

    2SK2026-01

    Abstract: 2SK2026 SC-65 T151 a2361
    Contextual Info: 2SK2026-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - IIA I Features S E R I E S Outline Drawings 'High speed switching ' Low on-resistance 'No secondary breakdown Low driving power ' High voltage •Vos“ ± 3 0 V Guarantee 'Avalanche-proof


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    2SK2026-01 SC-65 2SK2026-01 2SK2026 SC-65 T151 a2361 PDF

    003A

    Abstract: 2SK2759 2SK2759-01R
    Contextual Info: S P E C I F I C A T I O N T E N T A T I V E DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 7 5 9 - 0 1R SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJLid


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    2SK2759-01R 0257-R-004a Dpu191 150-003a 0257-R-003a 003A 2SK2759 2SK2759-01R PDF

    CQ 419

    Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
    Contextual Info: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof


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    2SK2165-01 SC-65 CQ 419 oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165 PDF

    2SJ474-01L

    Abstract: 2SJ474-01S
    Contextual Info: SPECIFICATION D E V IC E N A M E : P o w er M O S F E T T Y P E N AM E : 2 S J 4 7 4 -0 1 L .S S P E C . NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED . 2 Y 0257-R-004a


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    2SJ474-01L 2SJ474-01S 0257-R-004a 0257-R-003a 2SJ474-01S PDF

    2SK2147

    Abstract: 2SK2147-01R A2414
    Contextual Info: 2 S K 2 1 4 7 - 0 1 FUJI POWER MOS-FET R N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GS= ± 30 V Guarantee


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    2SK2147-01R 20Kii) bhts30s3# 2SK2147 2SK2147-01R A2414 PDF

    K2022

    Abstract: T151 A2349 2SK2022-01
    Contextual Info: 2SK2022-01 MR FUJI P O W E R M O S-F ET N-CHANNEL SILICON POWER MOS-FET F A P - IIA • Features S E R IE S Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V cs= ±30V Guarantee


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    2SK2022-01 Tc-25Â SC-67 K2022 T151 A2349 PDF

    K2003

    Abstract: A2329
    Contextual Info: 2SK2003-01MR FU JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g; = ± 3 0 V Guarantee


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    2SK2003-01MR K2003 A2329 PDF

    A2293

    Contextual Info: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


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    2SK1943-01 20Kfi) zgTi30 A2293 PDF

    Contextual Info: SPECIFICATION DEVICE NAME : Power M OSFET TYPE NAME : 2SJ476-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED 3 ËÎ V flO R T -P - A fL l-a 1.Scope This specifies Fuji Power M OSFET 2SJ476-01L.S


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    2SJ476-01L 0257-R-003a PDF

    L295V

    Abstract: KSD1 110 p1403 equivalent
    Contextual Info: TOSHIBA TC9317F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 9 317 F DTS MICROCONTROLLER DTS-21 The TC9317F is a 4bit CMOS microcontroller for digital tuning systems. It is capable of functioning at a low voltage of 3V and features a built-in PLL and LCD drivers.


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    TC9317F DTS-21) TC9317F LQFP80-P-1212-0 L295V KSD1 110 p1403 equivalent PDF

    003A

    Abstract: 2SJ473-01L
    Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


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    2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 003A PDF

    12V lead acid battery

    Contextual Info: e r urm _ LTC1042 Window Comparator TECHNOLOGY FCflTU M S DCSCRIPTIOfl • Micropower 1 .5/tW 1 Sample/Second Th e LT C 10 4 2 is a monolithic C M O S window com parator ■ W ide Supply Range— + 2.8V to + 16V manufactured ■ High Accuracy Center Error ± 1 m V M ax


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    LTC1042 LTC1042 12V lead acid battery PDF

    diode in40

    Abstract: 2SJ474-01L 2SJ474-01S
    Contextual Info: SPECIFICATION D E V IC E N A M E : Power M O S F E T TYPE NAME : 2 SJ474-01L.S S P E C . NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED . 2 Y 0257-R-004a 1 1.Scope


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    2SJ474-01 0257-R-004a 2SJ474-01L 0257-R-003a 80jWs 0257-R-003a diode in40 2SJ474-01S PDF

    12V lead acid battery

    Abstract: LTC1042 "wind powered" 6V charger diagram LEAD ACID CHARGER 8 amp 12V SOLAR 12v wind powered battery charger "lead acid" battery monitor solar panel 6v to 12v LM334 LT1004-2 LTC1042C
    Contextual Info: r r u v m ^ • / TECHNOLOGY _LTC1042 Window Comparator FCATURCS DCSCftlPTIOil ■ Micropower 1 .5/tW 1 Sample/Second Th e LT C 10 4 2 is a monolithic C M O S window com parator ■ W ide Supply Range— + 2.8V to + 16V manufactured ■ High Accuracy


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    LTC1042 LTC1042 12V lead acid battery "wind powered" 6V charger diagram LEAD ACID CHARGER 8 amp 12V SOLAR 12v wind powered battery charger "lead acid" battery monitor solar panel 6v to 12v LM334 LT1004-2 LTC1042C PDF

    diode A7A

    Abstract: 003A 2SJ473-01L MOSFET 2302 EIAJ-SC-64
    Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S


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    2SJ473-01L 0257-R-004a 2SJ473-01 0257-R-003a 0257-R-003a diode A7A 003A MOSFET 2302 EIAJ-SC-64 PDF

    oms 450

    Abstract: 2SK2166-01
    Contextual Info: 2SK2166-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ - _ _ _ _ _ _ _ _ _ FAP-IIIA SERIES Outline Drawings • Features • High current • Low o n-resistance • No secondary b reakdow n • Low driving p o w e r


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    2SK2166-01 20Kf2) A2-310 oms 450 PDF

    SM6G14

    Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A
    Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42


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    000221b SF0R1B42 SF0R1G42 SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42 SF1B12 SF1D12 SF1G12 SM6G14 triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A PDF

    8355 8755 intel microprocessor block diagram

    Abstract: MCS-48 8755 intel microprocessor block diagram MCS48 instruction set intel 8755 USART 8251 expanded block diagram MCS-48 Manual The Expanded MCS-48 System mcs48 internal architecture of 8251 USART
    Contextual Info: in t e i # ° r <p r?> > V 9 Intel C o rp o ra tio n , 1977 98-413B Price S1 .OO Related Intel Publications “MCS-48 Microcomputer User's Manual" "Using the 8251 Universal Synchronous/Asynchronous “8255 Programmable Peripheral Interface Applications"


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    98-413B MCS-48TM NL-10Q6 8355 8755 intel microprocessor block diagram MCS-48 8755 intel microprocessor block diagram MCS48 instruction set intel 8755 USART 8251 expanded block diagram MCS-48 Manual The Expanded MCS-48 System mcs48 internal architecture of 8251 USART PDF