2SK2147-01
Contextual Info: 2SK2147-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-n SERIES I Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary breakd ow n • Low driving p o w er
|
OCR Scan
|
2sk2147-01032io200d31b0 |
PDF
|
2SK2147-01
Abstract: H150
Contextual Info: 2SK2147-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-n SERIES Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High vo ltag e • V G5= ± 3 0 V Guarantee
|
OCR Scan
|
2sk2147-0120ki200d31fca2-304+1h150
|
PDF
|
2SK2147-01
Abstract: H150
Contextual Info: 2SK2147-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET A _ _ . — - FAP-n SERIES Outline Drawings • Features • • • • • • • High speed switching Low on-resistance No secondary breakdown
|
OCR Scan
|
2sk2147-0120ki200d31fca2-304+1h150
|
PDF
|
STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
|
Original
|
stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
|
PDF
|
2SK2147
Abstract: 2SK2147-01R A2414
Contextual Info: 2 S K 2 1 4 7 - 0 1 FUJI POWER MOS-FET R N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GS= ± 30 V Guarantee
|
OCR Scan
|
2sk2147-01r20kiibhts30s32sk2147+1a2414
|
PDF
|
ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
|
OCR Scan
|
2sb15322sc38212sc38222sc3865+162sc38862sc43832sc45072sc45082sd17262sd1740et4122sk12172sk2850esab92m-02n2sk28792sk27652sk26452sk19162sk2645 mosfet2sk1082
|
PDF
|
2SK1101-01M
Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
2sk1006-01mt0220f152sk1007-01t0220+62sk1009-012sk1386-012sk1011-012sk1101-01m2sk1013-012sk1015-01
|
PDF
|
2SK1014-01
Abstract: 2SK151
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
2sk1006-01m2sk1007-012sk1009-012sk1386-01+82sk1011-012sk1101-01m2sk1013-012sk1015-012sk1916-012sk1017-012sk1014-012sk151
|
PDF
|
2sk1507
Abstract: 2SK956 2SK1011 2SK1011-01 2SK1012 2SK1016 2SK1082 2SK1217 2SK1916 2SK962
Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01
|
OCR Scan
|
2sk1006-01mt0220f152sk1007-01t0220+132sk1009-012sk1386-012sk1011-012sk1101-01m2sk15072sk9562sk10112sk10122sk10162sk10822sk12172sk19162sk962
|
PDF
|
2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
|
Original
|
2sk1358o-2472sk13592sk1362+122sk25632sk25682sk14112sk15352sk14102sk15382sk1358 datasheet2sk20822sk2397-01mr2sk24752sk23702sk2225
|
PDF
|