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    808W Search Results

    808W Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    54601-808WPLF
    Amphenol Communications Solutions RJ45 Modular Jack Connector, Input Output Connectors, CAT 3, Low Profile, 8P8C, Right Angle, Through Hole, without Shield, 1 Port. PDF
    SF Impression Pixel

    808W Price and Stock

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    Altech Corporation FTI1808WM

    WIRECONNECTOR 2X18AWG/0.75
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    Master Electronics FTI1808WM
    • 1 -
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    • 100 $8.94
    • 1000 $8.10
    • 10000 $8.10
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    RS FTI1808WM Package 13 3 Weeks 1
    • 1 $4.99
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    • 100 $4.99
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    Powell Electronics FTI1808WM 5 100
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    • 100 $10.28
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    • 10000 $10.28
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    Carling Technologies 62112918-0-8-W

    611/621-SERIES ROCKER SWIT
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    Master Electronics 62112918-0-8-W
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    Sager 62112918-0-8-W 1
    • 1 $3.94
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    • 100 $3.61
    • 1000 $2.20
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics ADIFD0808WHI24
    • 1 $4103.99
    • 10 $3946.15
    • 100 $3946.15
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    Signal Transformer Inc F1C2-080808W-4R7M

    FIXED IND 4.7uH 10.5A 9.8 MOHM
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    Master Electronics F1C2-080808W-4R7M
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    Sager F1C2-080808W-4R7M 450
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    • 10000 $2.91
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    Altech Corporation FII1808W

    Altech FII1808W Wire Connector Ferrule Insulated 18 /0.75 sq mm White 8mm RU CSA CE UL
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    Master Electronics FII1808W
    • 1 $21.71
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    Powell Electronics FII1808W 319 500
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    808W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VSO05561

    Abstract: 818-25W
    Contextual Info: BC 817W, BC 818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC 807W, BC 808W PNP 1 Pin Configuration VSO05561 Type


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    vso0556117-16wot-32317-25w+417-40w18-16w18-25w818-25w PDF

    C2320

    Abstract: BC 170 transistor Q62702-C2320 transistor 6cs TRANSISTOR c2324 BC817W transistor bc icbo nA npn transistor marking A02 c2278 C2324
    Contextual Info: BC 817W,BC 818W NPN Silicon AF Transistor l For general AF applications l High collector current l High current gain l Low collector-emitter saturation voltage l Complementary types: BC 807W, BC 808W PNP Type Marking BC 817-16W BC 817-25W BC 817-40W BC 818-16W


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    17-16w17-25w17-40w18-16w+1518-25w18-40wq62702-c2320q62702-c2278q62702-c2321q62702-c2322c2320bc 170 transistortransistor 6cstransistor c2324bc817wtransistor bc icbo na npntransistor marking a02c2278c2324 PDF

    5Cs transistor

    Abstract: BC 170 transistor TRANSISTOR BC 807w Q62702-C2328
    Contextual Info: PNP Silicon AF Transistor ● ● ● ● ● BC 807W BC 808W For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817W, BC 808W NPN 2 3 1 Type BC 807-16W BC 807-25W BC 807-40W


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    07-16w07-25w07-40w08-16w+1008-25w08-40wq62702-c2325q62702-c2326q62702-c2327q62702-c23285cs transistorbc 170 transistortransistor bc807w PDF

    BC807W

    Abstract: BC808W hFE Group
    Contextual Info: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


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    ot-323ul94v-007-16w07-25w+707-40w08-25w08-40w08-16wbc807wbc808whfe group PDF

    Contextual Info: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW


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    ot-323ul94v-007-16w08-16w+408-25w07-25w07-40w08-40w PDF

    5Cs transistor

    Abstract: transistor 5bs 5BS transistor
    Contextual Info: SIEMENS BC 807W BC 808W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W NPN Type Marking Ordering Code Pin Configuration


    OCR Scan
    bc817wbc818w07-16w07-25w+907-40w08-16w08-25w08-40wq62702-c2325q62702-c23265cs transistortransistor 5bs5bs transistor PDF

    VSO05561

    Abstract: 807W
    Contextual Info: BC 807W, BC 808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC 817W, BC 818W NPN 1 Pin Configuration VSO05561 Type Marking Package


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    vso0556107-16wot-32307-25w+407-40w08-16w08-25w807w PDF

    8086 minimum mode and maximum mode

    Abstract: timing diagram of 8086 maximum mode 8086 microprocessor architecture diagram timing diagram of 8086 minimum mode max and min mode 8086 8086 microprocessor APPLICATIONS block and pin diagram of 8086 addressing modes 8086 8086 minimum mode 8086 microprocessor pin diagram
    Contextual Info: 8086 16-Bit Microprocessor ¡APX86 Family MILITARY INFORMATION 8086 DISTINCTIVE CHARACTERISTICS • • • • • Directly addresses up to 1 Mbyte of memory 24 operand addressing modes Efficient implementation of high-level languages Instruction set compatible with 8080 software


    OCR Scan
    16-bitapx868086 minimum mode and maximum modetiming diagram of 8086 maximum mode+88086 microprocessor architecture diagramtiming diagram of 8086 minimum modemax and min mode 80868086 microprocessor applicationsblock and pin diagram of 8086addressing modes 80868086 minimum mode8086 microprocessor pin diagram PDF

    DELL UL94V0

    Abstract: A103W
    Contextual Info: 3 £5 Is A §! 1.27 TYP _ .050 ss > 4 5 6 X - J DIM "A” DIM "A" \ SEE NOTE 3 DIM "B" •Sb 2° 5 2 a*25 ,p •wo !s s 2 1.27 TYP h is - »ld“ s^s | I| 1 p :i DIM ”C" 2.0 REF , u * ? 0S I Elc L- _ O 1 o TO 1 £ 2.54TYP si .100 i? 3.18 *| o• *■£


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    54typd8/05/9t70195-013w+8/018w/513w/518w/713w/718w013b/0186/5136/5188/713b/7188dell ul94v0a103w PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-rf-bipolar-transistors45-rf-bipolar-transistorsot-23ot-143+10s4 78a diode schottkydiode s6 78abc 148 transistor datasheettransistors bc 543transistor bc 158bc 158 is npn or pnp68w npntransistor bcs6 78abaw 92 PDF

    pd600-230-48

    Abstract: pd800a-230-48 ac 187 heatsink Densei-Lambda PD800A PD800A 0/PD800A-230-48 Nomex countersunk screw countersunk screw for pcb PD800A-SERIES
    Contextual Info: PD800A-SERIES AC-DC Front end power module DENSEI LAMBDA • Features • • • • • • • Wide Range Input 88 ~ 265VAC High efficiency 90% typ Conducted EMC : EN55022-A Power Factor Correction : EN61000-3-2 Susceptibility : EN61000-4-2,-3,-4,-5,-6


    OCR Scan
    pd800aseries265vacen55022-aen61000-3-2+14en61000-4-2ul1950csa950en60950pd600-230-48pd800a-230-48ac 187 heatsinkdensei-lambda pd800apd800a0/pd800a-230-48nomexcountersunk screwcountersunk screw for pcbpd800a-series PDF

    marking 5bs

    Abstract: BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W
    Contextual Info: BC807W, 808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package


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    bc807wbc808wbc817wbc818w+9vso05561bc807-16wot323bc807-25wbc807-40wmarking 5bsbc808-16wbc808-25wbc808-40w PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan
    o-92tlo-92ddiode s6 78atransistor pnp ba rt sot 89+8mmic cea sot36332n45transistor 6bwtransistor bc 545bf1012s6bw sot-23up 6103 s86bw 12 transistor PDF

    Contextual Info: BC 817W / BC 818W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 225 mW


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    ot-323ul94v-017-16w18-16w+418-25w17-25w17-40w18-40w PDF

    MCX6251

    Contextual Info: R E V ISIO N S D E S C R IP T IO N \P E R IS S ZO NE B A— 1 N0.1 B1 D— 4 CANCELLED R E Q U E S T \D A T E WAS C H A N G E D \R D — D M 8 9 0 9 1 3 0 1 1 \0 9 — 1 3 — 0 0 ’ PCB MOUNTING H O LE A N D A D D ED O i o 12 \N / A 1 - 2 0 - 0 2 ’


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    8-08wasx6251b4--3--75--bmcx6251+2mcx6251b4--3gt30g--75086251aae02ge7f PDF

    PD800A-230-48

    Abstract: pd600-230-48 ac 187 heatsink PD800A 808W ac to dc 12v 200watt 200watt IR 23048 1.50 MKT ac to dc 12v 200watt convertor
    Contextual Info: IAMBDAA An Invensys company With the PD Series, LAMBDA is presenting a revolutionary new concept of AC/DC converters. Through its extreme compactness, an efficiency of 90% and the mechanical construction, these modules offer the maximum in design flexibility.


    OCR Scan
    88-265vacen55022en61000-3-2en61000-4+14vde0160pd800aen55022bel\l61000-3-2en61000-4-2pd800a-230-48pd600-230-48ac 187 heatsink808wac to dc 12v 200watt200wattir 230481.50 mktac to dc 12v 200watt convertor PDF

    Contextual Info: 5& 1.27 TYP _ \ ± _ .050 Z *. i- 3 £• X— DIM "A" ^ r 1 DIM "A" SEE NOTE 3 DIM "B" Is A n i i * t! i (T2 Jp « C 1.27 TYP IE i £•yfy Ou DIM ” C ? oZ0 0,9 REF !|i S ^s lifi • I* = 11.S3 « O-J i^ i B It] 05 @3 .100 3 -ia l .125 s si -^)e o.3 8 (. 015)1


    OCR Scan
    t60298278wn/813wn/818vai PDF

    Contextual Info: BC807W, 808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking


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    bc807wbc808wbc817wbc818w+5vso05561bc807-16wot323bc807-25wbc807-40w PDF

    BC817W

    Abstract: BC818W
    Contextual Info: BC 817W / BC 818W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 225 mW


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    ot-323ul94v-017-16w17-25w+617-40w18-25w18-40w18-16wbc817wbc818w PDF

    2907A PNP bipolar transistors

    Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
    Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    ot-23ot-1432907a pnp bipolar transistorsdiode s6 78a+8mmic sot 363s1140diode ta 70/042907a pnp bipolar transistors datasheetdiode baw 62transistor bc 158baw 9268w sot PDF

    M28840/16AE1S1

    Abstract: M28840/16AF1S1 M28840/16AG1S1 DATA SHEET M28840/16AB1S1
    Contextual Info: Qwik Connect G L E N A I R n A P R I L 2010 n V O L U M E 14 n N U M B E R 2 QwikConnect M ega Rust is an annual event that began in June 2005 and rotates among several locations to reach a broader audience and to best meet the needs of the U.S. Navy. Mega


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    m28840/16ae1s1m28840/16af1s1m28840/16ag1s1 data sheetm28840/16ab1s1 PDF

    DELL UL94V0

    Abstract: RI57 D8059 513w BERG 8 pin dr 611545 Dell L dell 4550
    Contextual Info: 3 4 5 6 2Ì PRODUCT NO. 61154— * * * * DIM”B POSITION S SEE NOTE 02.44 .096 POSITION T (SEE NOTE 5 SOCKET PC BOARD LAYOUT (COMPONENT SIDE) 18! NOTE: 5 0| (S 32 si ii If c 1.MATERIAL HOUSING: LIQUID CRYSTAL POLYMER GLASS FILLED U L 9 4 V -0 RATED, COLOR BLACK OR NATURAL


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    t60298d8/05/9t70088t70195+14d5/22/9c/0080/50b/708wd-013w/018w/513w/518w/713w/718w03w/108w/603w/608w/803w/808wdell ul94v0ri57d8059513wberg 8 pin dr611545dell ldell 4550 PDF

    nhg p-5

    Abstract: tt 95 n 12 818B 80EW NYLON-46 sii 021 p727 613mj 603W
    Contextual Info: 1.27 TYP ^ L L .0 5 0 X— DIM "A" ^ ^ 1 DtM "A" SEE NOTE 3 DIM ” B" 1.27 TYP DIM ” C 0 .9 REF u a L .125 - f r ¡ g Q .3 8 ( .0 Í5 ) l TYP 0 1 .4 0 055 œW tolerance unless otherwise specified m a t I cod e dote T6029Ö 36/05/96 linear .0 ± .00 ± 0.06


    OCR Scan
    nylon-46ul94v-150/i-in715/im+1454/imunderplat03vlhg/loawhg/603whg/608hg/803whg/80ewhg/108w/603w/608w/803w/808w113whg/118whg/613whg/618whg/813whg/818whcnhg p-5tt 95 n 12818b80ewsii 021p727613mj603w PDF

    Contextual Info: BC807W, 808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package


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    bc807wbc808wbc817wbc818w+6vso05561bc807-16wbc807-25wbc807-40wbc808-16wbc808-25w PDF