8075B Search Results

Contextual Info: A P T 8075B V R ADVANCED W 7Æ P o w e r Te c h n o l o g y soov i2 a 0.7500 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

8075bn

Abstract: apt8075bn 8090BN APT8090BN
Contextual Info: D TO-247 G S POWER MOS IV 8075BN 800V 13.0A 0.75Ω APT8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage

R113183

Abstract: 9228-N-140 R125705 8156-a-0440
Contextual Info: Cross Reference AEP 1-104 1-109 1-110 1-113 1-118/063 1-119 1-122 1-125 1-142 1-301/188 1-301/196 1-302/188 1-302/196 1-303/188 1-303/196 1-305/188 1-305/196 1001-1541-010 1001-1571-002 1001-1571-003 1001-7541-010 1001-7571-002 1001-7571-003 1002-1541-010

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

8075bn

Abstract: 090Q SML8075BN sml7575bn
Contextual Info: SEM ELAB bOE ]> PLC 0133107 QDOOtibM fl5S lili ISMLB MOS POWER iFFi à -ie> 8075BN SML7575BN SML8090BN SML7590BN SEME LAB 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

8075bn

Abstract: 8075b APT7575BN APT7590BN APT8075BN APT8090BN 090Q 7575b
Contextual Info: O D Ô s ADVANCED P ow er T e c h n o lo g y 9 8075BN APT7575BN APT8090BN APT7590BN POWER MOS IVfi 800V 750V 8Q0V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q Q.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

IC HS 8108

Abstract: IC HS 8109 8216-B-0632 B1566 1032 9738a H772 8212-B-0440 bl57 h834
Contextual Info: Electronic Hardware £ EFJohnson ^ COMPONENTS Part Number Cross Reference H.S. Smith E.F.J. H.S. Smith E.F.J. H.S. Smith E.F.J. 100 101 108-0753-001 456-101 456-102 108-0301-001 1499-102 108-0740-102 108-0302-001 102 108-0750-001 108-0771-001 456-103 456-104

9738a

Abstract: TJ-102
Contextual Info: J lo h N S O N AEP Com petitor Cross Reference Components JC I 1-104. . 131-6701-401 1-109. . 131-6701-201 1-110. . 131-6701-301 1-113. . 131-6901-801 1-118/063 . . 131-6701-801

090Q

Abstract: t8075 t80-75 8075bn APT6076
Contextual Info: O A D d v a n c e d P o w er T e c h n o lo g y 9 8075BN APT7575BN APT8090BN APT7590BN Ô S POWER MOS IV 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATING S All Ratings: T c = 25°C unless otherwise specified

090Q

Abstract: 8075BN
Contextual Info: O A dvanced R ow er Te c h n o lo g y D 8075BN APT7575BN APT8090BN APT7590BN ô s 5 5 w e r m o s rm 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Í2 0.75Í1 0.90n 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

8075b

Contextual Info: D TO-247 G S POWER MOS IV 8075BN 800V 13.0A 0.75Ω Ω APT8090BN 800V 12.0A 0.90Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

Contextual Info: A dvanced P o w er Te c h n o l o g y OD OS POWER MOS IV® 8075BN 800V 13.0A 0.75Í1 APT8090BN 800V 12.0A 0.90Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: A dvanced P ow er Te c h n o lo g y O D 8075BN APT7575BN APT8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.