800A DC DIODE Search Results

AC INRUSH CURRENT 1000A LIMITER

Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
Contextual Info: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)

phmb800b12

Contextual Info: IGBT MODULE PHMB800B12 Single 800A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range

Mitsubishi transistor

Contextual Info: MITSUBISHI TRANSÌSTOR MODULES ! QM800HA-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE ! QM800HA-2HB • lc Collector cu rre n t. 800A • V cex Collector-em itter • hFE DC current g am . 750 . v o lta g e 1000V

DIODE 24B

Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750

IGBT module FZ 1200

Abstract: KF6C FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

eupec igbt

Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

diode 1700v

Abstract: FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

Hitachi DSA002700

Contextual Info: Spec.No.IGBT-SP-06011 R1 P1/5 IGBT MODULE MBL800E33C Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles) diode – ultra soft fast recovery diode(USFD). ∗ low noise due to built-in free-wheeling

Contextual Info: C o n d itio n s 1> Viso, 4 AC, 1min Operating Q S ym bol —I o Ü —I /> SKiiP 802 GB 061 - 259 CTV Absolute Maximum Ratings / Values stor. temperature Units 2500 V -25.+85 °C 600 400 800 -40.+150 800 1600 8000 320 V V A °C A A A kAs2 IGBT and Inverse Diode

S4 89 DIODE

Contextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

S4 Diode

Abstract: diode 474 a
Contextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT

Contextual Info: An IXYS Company Provisional Data Data Sheet Issue:- 1  WESTCODE Date:- 2 Feb, 2004   Extra Fast Recovery Diode Type F0800LC180 Old Type No.: F0400LC180 Absolute Maximum Ratings VOLTAGE RATINGS Repetitive peak reverse voltage, note 1 VRSM Non-repetitive peak reverse voltage, (note 1)

FD1000FX-90

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .800A

FD1000FV-90

Abstract: full wave rectifier diodes S10-27
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .800A

DFM800NXM33-F000

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating

Fast Recovery Diode Module 1800v

Abstract: DFM800NXM33-A000 UC 3845
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V

UC 3845

Abstract: Fast Recovery Diode Module 1800v DFM800NXM33-A000
Contextual Info: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V 2.5V 800A 1600A ■ Isolated Base

Contextual Info: WESTCODE An Date:- 23 Jun, 2004 Data Sheet Issue:- 1 IXYS Company Soft Recovery Diode Type M0859LC140 to M0859LC160 Old Type No.: SM02-16CXC220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, (note 1) 1400-1600

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. MBRTA8001 50 R T H R U MBRTA800200(R) SCHOTTKY DIODE MODULE TYPES 800A Features 800Am p Rectifier 150-200 Volts High surge Capability Types Up to 200V V r r m Isolation Type Package Electrically Isolation baseplate HEAVYTHREE TOWER

Contextual Info: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

RM400DY-66S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S ● IDC . 400A ● VRRM . 3300V

RM400HV-34S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM400HV-34S HIGH SPEED SWITCHING USE INSULATED TYPE RM400HV-34S • IDC • VRRM DC current . 400A Repetitive peak reverse voltage . 1700V • trr Reverse recovery time . 0.5µs

Contextual Info: ISL9R1560PF2 15A, 600V Stealth Diode Features General Description The ISL9R1560PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft

TRANSISTOR TC 100

Abstract: IGBT FZ 800
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997