8-12 GHZ POWER AMPLIFIER MMIC 40 DBM Search Results

H590

Abstract: HMC590LP5 HMC590LP5E 109001
Contextual Info: HMC590LP5 / 590LP5E v01.0107 AMPLIFIERS - SMT 5 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features The HMC590LP5 / HMC590LP5E is ideal for use as a power amplifier for: Saturated Output Power: +31.5 dBm @ 23% PAE • Point-to-Point Radios

MLA-01122B-H6

Abstract: mmic mmic 6 GHz
Contextual Info: MLA-01122B-H6 1 - 12 GHz Low Noise MMIC Amplifier in Hermetic Package May, 2011 Features: • • • • • • • • • • Wide Frequency Range: 1.0 to 12 GHz Excellent NF : 1.6 dB @ 6.0 GHz High Gain: 17 dB @ 6 GHz P-1dB: 16 dBm @ 6 GHz OIP3: 27 dBm @ 6 GHz

H591

Abstract: HMC591LP5 HMC591LP5E
Contextual Info: HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz AMPLIFIERS - SMT 5 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: Saturated Output Power: +33 dBm @ 20% PAE • Point-to-Point Radios

HMC441LP3

Abstract: GaAs
Contextual Info: HMC441LP3 v00.1202 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC441LP3 is a medium PA for: Gain: 14 dB • Point-to-Point Radios Saturated Power: +20 dBm @ 20% PAE • Point-to-Multi-Point Radios

HMC592

Contextual Info: HMC592 v01.0107 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Typical Applications Features The HMC592 is ideal for use as a power amplifier for: Saturated Output Power: +31 dBm @ 21% PAE • Point-to-Point Radios Output IP3: +38 dBm

HMC591

Contextual Info: HMC591 v01.0107 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz Typical Applications Features The HMC591 is ideal for use as a power amplifier for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm

HMC464LP5

Contextual Info: HMC464LP5 v00.0304 MICROWAVE CORPORATION GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC464LP5 wideband driver is ideal for: +26 dBm P1dB Output Power • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT

HMC223MS8

Abstract: HMC224MS8 HMC280MS8G HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz 5.5 GHz power amplifier
Contextual Info: HMC280MS8G v03.0703 MICROWAVE CORPORATION GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC280MS8G is ideal for: Psat Output Power: +24 dBm • UNII & HiperLAN Output IP3: +38 dBm High Gain: 18 dB • ISM Single Supply: +3.6V

Contextual Info: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin/Zout = 50ohm •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION

5.1 amplifier schematic

Abstract: 5.1 power amplifier circuit diagram amplifier 5.1 5.1 transistor amplifier circuit diagram 5.1 amplifier circuit diagram HMC408LP3 HMC408 5.8 ghz amplifier power 15 watt power supply circuit diagram application notes Microwave
Contextual Info: MICROWAVE CORPORATION HMC408LP3 v02.0604 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC408LP3 is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Pt-Pt / Multi-Pt. Radios

HMC562

Contextual Info: HMC562 v01.0406 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz Typical Applications Features The HMC562 wideband driver is ideal for: P1dB Output Power: +12 dBm • Military & Space Gain: 12.5 dB • Test Instrumentation Output IP3: +19 dBm

HMC469MS8G

Contextual Info: v00.0504 MICROWAVE CORPORATION HMC469MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC469MS8G is a dual RF/IF gain block & LO or PA driver: +18 dBm P1dB Output Power • Cellular / PCS / 3G

HMC499

Contextual Info: HMC499 v00.0903 MICROWAVE CORPORATION GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC499 is ideal for use as a power amplifier for: +33 dBm Output IP3 • Point-to-Point Radios Gain: 16 dB • Point-to-Multi-Point Radios

capacitor 0604

Abstract: HMC356LP3 HMC372LP3 16 pins qfn 3x3 amplifier gsm gsm power amplifiers 10 w
Contextual Info: HMC372LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 8 Typical Applications Features The HMC372LP3 is ideal for basestation receivers: Noise Figure: <1.0 dB +34 dBm Output IP3 AMPLIFIERS - SMT • GSM, GPRS & EDGE Gain: 15 dB

HMC451

Contextual Info: HMC451 v00.0305 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 5.0 - 20.0 GHz Typical Applications Features The HMC451 is ideal for use as a driver amplifier for: Gain: 22 dB • Point-to-Point Radios Saturated Output Power: +22 dBm @ 24% PAE

hmc383

Contextual Info: HMC383 v01.0606 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Applications Features The HMC383 is ideal for use as a driver amplifier for: Gain: 16 dB • Point-to-Point Radios Saturated Output Power: +18 dBm • Point-to-Multi-Point Radios & VSAT

0703 transistor

Abstract: HMC313 amplifier TRANSISTOR 12 GHZ
Contextual Info: HMC313 v02.0703 MICROWAVE CORPORATION GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features Ideal as a Driver & Amplifier for: P1dB Output Power: +14 dBm • 2.2 - 2.7 GHz MMDS Output IP3: +27 dBm

XD9001

Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

capacitor 0604

Abstract: HMC388LP4
Contextual Info: HMC388LP4 v01.0604 MICROWAVE CORPORATION MMIC VCO w/ BUFFER AMPLIFIER, 3.15 - 3.4 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.9 dBm • Wireless Local Loop WLL Phase Noise: -113 dBc/Hz @100 KHz • VSAT & Microwave Radio

B1009

Abstract: XB1009-QT XB1009-QT-0G00 XB1009-QT-EV1 XP1022-QF XU1002 XU1002-QD XB1004-QC
Contextual Info: 12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN B1009-QT February 2007 - Rev 08-Feb-07 Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package

HMC390

Abstract: HMC390LP4 VCO 24 GHz
Contextual Info: HMC390LP4 v01.0604 MICROWAVE CORPORATION MMIC VCO w/ BUFFER AMPLIFIER, 3.55 - 3.9 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +4.7 dBm • Wireless Local Loop WLL Phase Noise: -112 dBc/Hz @100 KHz • VSAT & Microwave Radio

HMC311ST89

Contextual Info: HMC311ST89 v00.0204 MICROWAVE CORPORATION InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC311ST89 is an ideal RF/IF gain block or LO buffer amplifier for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G

Contextual Info: HMC462LP5 / 462LP5E v05.0213 AMPLIFIERS - LOW NOISE - SMT GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462LP5 / HMC462LP5E Wideband LNA is ideal for: Noise Figure: 2.5 dB @ 10 GHz • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz

Contextual Info: EMM5074X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 32.5 dBm Typ. •High Linear Gain: GL = 28 dB(Typ.) •Broad Band: 5.8 - 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5074X is a wide band power amplifier MMIC that