8 W BALLAST Search Results

HC1-5504DLC-5

Abstract: HC1-5504DLC-9 HC3-5504DLC-5 HC3-5504DLC-9 HC4P5504DLC-5 HC4P5504DLC-9 HC-5504 HC-5504DLC HC9P5504DLC-5 HC9P5504DLC-9
Contextual Info: NS DESIG W E N R ED F O 4B1 MEND HC550rt Center at M O d n C a E R B o 4 T p 55 NO S up m/tsc See HCr Technical rsil.co te n u .i o t w tac or w w or c on TERSIL N -I 8 8 1-8 May 1997 HC-5504DLC SLIC Subscriber Line Interface Circuit Features Description

TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Contextual Info: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors

TP5002

Abstract: TP5002S TPS002 TP500 1N4148 BD136
Contextual Info: MOT OROL A SC XSTRS/R F 4bE b3b7ES4 D 001524*1 3 «nO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5002' TP5002S The RF Line UHF Linear Power Transistors 1.5 W — 3 8 0 t o 5 1 2 M H z U H F LIN E A R P O W E R T R A N S IS T O R S N P N S IU C O N The TP5002/S are NPN gold metallized transistors using diffused ballast resistors for

IR2113 APPLICATION NOTE

Abstract: IR2113 IN FULL BRIDGE IR2113 h bridge ir2113 IR2113 FULL BRIDGE AN9010 circuit to ir2113 IR2113 battery charger IR2113 DC AC Power Inverters IR2110 h bridge application notes
Contextual Info: E LE T BSO O SS , O C E IR 2 1 1 0 R P , E N E t S RAW IGNS, 13 ter a D n e H S C T 1 I E /t s c TW , IR2 port WD PAR NO NE IR2112 cal Sup rsil.com i c hn .inte r Te r w w w u o o ct RSIL onta or c 8-INTE Description 1- 88 July 1998 Features • Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . 500V

ERL 35 transformer

Abstract: SWITCHING TRANSFORMER ERL 39 digital relay 12v 3a datasheet "ground Key detection" TRANSFORMER ERL 35 rtd tec controller
Contextual Info: HC-5509A1 S IGN DES W E N t OR er a ED F 1R3060 rt Cent c D N s E /t po 9A 550 l Sup OMM .com REC See HCchnica .intersil T O w N Te r ww our tact RSIL o n o or c 8-INTE 1- 88 PRELIMINARY May 1997 Features SLIC Subscriber Line Interface Circuit Description

MJ10200

Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102
Contextual Info: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.

STM915-14

Contextual Info: S G S - 1 H 0 M S 0 N r •UO T «! 5 7 . S T M 9 1 5 -1 4 RF POWER MODULE GSM MOBILE APPLICATIONS . LINEAR PO W ER AM PLIFIER ■ 8 9 0 - 9 1 5 MHz . 12.5 VOLTS . IN PU T/O U TPU T 50 OHM S . P out = 14 W MIN. ■ G A IN = 4 1.5 dB MIN. ORDER CODE BRANDING

BPT20B8

Contextual Info: BIPOLARICS, INC Part Number BPT20B08 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 8 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 800 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz

Contextual Info: /=7 S G S -TH O M S O N 7 ^ #. Ran g^@ lllLigTO(M D(gl_ A M 8 1 214-060 RF & M I C R O W A V E T R A N S I S T O R S L-BA ND RADAR A P P L I C A T I O N S > R E F R A C T O R Y /G O L D M E TA LLIZA TIO N • E M IT T E R S ITE BALLASTED ■ R U G G E D IZ E D V S W R

Contextual Info: SGS-THOMSON S D 1 8 9 3 -0 3 It L I C T G » RF & MICROW AVE TR AN SISTO RS 1.6 GHZ SATCOM APPLIC ATIO N S . 1.65 GHz • 28 VOLTS . OVERLAY DIE GEOMETRY . GOLD METALLIZATION * HIGH RELIABILITY AND RUGGEDNESS ■ P o u t = 10 W MIN. WITH 11.0 dB GAIN . COMMON BASE

S0151

Contextual Info: am im m R F P ro du cts M ic m s e m m 140 Commerce Drive Montgomeryviile. PA 18936-1013 Tel: {215 631-9840 i pfO§f8£s> S D 1 5 1 1-8 RF & MICROWAVE TRANSISTORS UHF PULSE POWER COMMON EMITTER 12W T Y P IC A L C W 15W TYPICAL PULSED GOLD METALLIZATION m

Contextual Info: S G S -T H O M S O N ;[L[i gra ifl i S D 12 2 4 -1 0 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 5 7 . • . . . . 30 MHz 28 VOLTS IMD -2 8 dB COMMON EMITTER GOLD METALLIZATION ■ P o u t = 30 W MIN. WITH 18 dB GAIN PIN CONNECTION 1 4 /\ © DESCRIPTION

2SC2932

Abstract: RF POWER TRANSISTOR NPN R27 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T YP E DESCRIPTION 2 S C 2 9 3 2 is a s ilic o n NPN e p ita x ia l p la n a r ty p e tra n s is to r spe­ OUTLINE DRAWING D im e n s io n s in m m c if ic a lly designed fo r p o w e r a m p lifie rs a p p lic a tio n s in 8 0 0 —9 4 0

b0135

Abstract: TP3015 MOTOROLA POWER TRANSISTOR 14 3B2S 1N4148 motorola rf Power Transistor mobile rf power amplifier transistor TRANSISTOR B0135 NPN 0/TRANSISTOR NPN B0135
Contextual Info: MOTOROLA SC XSTRS/R F 4bE J> m b3b7254 DGTSEGM 3 MOTOROLA ” 33" 07 SEMICONDUCTOR TECHNICAL DATA TP3015 The RF Line UHF P o w er T ran sisto r The TP3015 is designed fo r 900 MHz m obile stations in both analog and digital appli­ cations. It incorporates high value em itter ballast resistors, gold metallizations and offers

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

NPN Silicon Epitaxial Planar Transistor

Abstract: Zv-z 21 MX0912B350Y
Contextual Info: Data sheet sta tu s Preliminary specification date o t Issue July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION D ESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

2N6390

Abstract: microstripline RCA2003
Contextual Info: File No. 626 RF P o w e r T ra n s is to rs Solid State Division RCA2003 2N 6390 2.5- and 3-W, 2-G Hz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in Microwave Power Am plifiers, Fundam ental-Frequency Oscillators, and Frequency Multipliers

SD4590

Abstract: atcb M208 20AWG R45X 2x200
Contextual Info: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION ν ν ν ν ν ν ν ν GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT,

Contextual Info: UM10486 UBA2015P reference design 120 V AC Rev. 1.1 — 8 September 2011 User manual Document information Info Content Keywords UBA2015P, 2x TL5HE35W ballast Abstract This document describes the UBA2015P reference design for 120 V (AC). UM10486 NXP Semiconductors

transistor RCA 274

Abstract: rca 628 2N6393 2N6392 TA8751 ta8746 RCA2010 HF-46 TA8752 rca transistor
Contextual Info: File No. 628 RF Power T ran sisto rs Solid State Division RCA2010 2N 6392 2N 6393 10-W, 2-GHz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in M icro w ave Pow er A m p lifie rs , F u n d am e n ta l-F re q u en cy O scillators, and Freq u en cy M u ltip liers

NPN Silicon Epitaxial Planar Transistor

Abstract: IEC134 MZ0912B100Y transistor Common Base amplifier NNN1
Contextual Info: blue binder, tab 12 Data sheet status Preliminary specification dats o f Issus July 1990 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting

marking EAAT

Abstract: 100ma telecom line fuses 600v glass fuse diameter 6mm 250vac 1000X 100-R diode Sr 206
Contextual Info: bel Type RJS Telecom RJSD0808 Pow er Cross Protection & Ballast Protection - Anpere Rating Catalog Naaibar Voltage Retleg Typical CaM Ratiftance • H Volt-drop •100% h (Voi max. Mahfag i n < lOaiSac e io / n Padt S u g a Currant (Amp) 50 Pulsai 1,000V

LBE2003S

Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n

BLU98

Abstract: L9 transistor transistor 4312 International Power Sources Planar choke SOT-103 transistor SOT103 l4 tam philips capacitor cross reference sot103
Contextual Info: PHILIPS INTERN A T I O N A L bSE T> m 711DÖSL GOtSTÖD 732 BLU98 IPHIN X U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M Hz band. Features: • emitter-ballasting resistors fo r an optim um temperature profile