8 TB 08 Search Results

TB840

Abstract: TB834 TB820 TB810 TB 810 MDB115 TB826 TB-823-HA TB850 TB-834-HA
Contextual Info: BROADBAND SERIES TB-8/TB-8-HA SP8T SWITCH HKjH ISOLATION-REFLECTlVE ABSOflPTIVE 0.02-18 GHz GENERAL INFORMATION: Series TB-8 and TB-8-HA switches are medium power devices that oper­ ate over relatively wide frequency ranges. Carefully selected diodes placed

BU-2032-1

Abstract: IN60
Contextual Info: 7/08/06 A 8/11/07 B 6/06/08 C Added "ROHS COMPLIANT" UPDATED SPECIFICATIONS Temperature ragnge was -40°C to +315°C TB BS TB BS T.B. B.S. BU-2032-1 + + PCB LAYOUT SPECIFICATIONS: * Holder material- White, 30% glass reinforced Liquid Crystal Polymer resin, UL File No. E123598, UL94V-0

AN7812R

Abstract: AN7805R AN78M05R AN78M12R T500mA AN7800R RY25 251C AN78M00R AN78XXR
Contextual Info: —— 140 AN78M O O R, A N 7 8 0 0 R > U — X w JEMj], > '] - - * • a n 78 moor v u — x u m 500mA, AN7800R > 'J - X ìiff iM K H t 1A 'C* ò . tb ;j*fK (± 5V, 8V (A N 7 8 M 0 8 R <0 A . 9 V *5 £ X f 1 2V <n 4 S S t , 'J -fc -, !- M f t- V itt * tB E E

TL872

Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840
Contextual Info: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.

AM9864

Abstract: AM9864-2 AM9864-20 AM9864-25 AM9864-3 b00053
Contextual Info: ADV MICRO -CHEflORY} Tb Am9864 Am9864 8 1 9 2 x 8 -B it Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS Fast Read Access Time Am9864-2/-20 : 200 ns Am9864 /-25 : 250 ns Am9864-30 : 300 ns Am9864-3/-35 : 350 ns Minimum endurance of 10,000 write cycles per byte with

Contextual Info: ¿ tb 7/92 - _ VpO D U O H H ' t CO M PO NENTS _ Q mm - 'H - o s - o l 2225-K Martin Avenue, Santa Clara, CA 95050 ^ ji^ - 0 9 ~ S ] _ f a x 408 492-1400 (4 0 8 > 10 to 500 MHz TO-8 Cascadable Amplifiers AC543

Contextual Info: 7 8 6 2 ►— ro <£> 2.05±0.l ro lo +o.o5 0 0 .8 0 0o.8‘0-05 c k u ; ltX DRILLED HOLE) CIRCUIT NO. I (PUNCHED HOLE) S*£W7v3fS!\taj ( t = 1. 6) RECOMMENDED P.C. BOARD HOLE DIM. ( t = 1 . 6 ) 4.55 V (0.5) ( 0 . 8) 1.7 > - 0 a tB > NOTES 1. : 5 l0 9 0 - * * 0 0 , 5 2 4 8 4 - * * 10

1NS818

Contextual Info: SCHOTTKY RECTIFIER DIODES, AXIAL, GLASS Peak Forward Peak Surge Current Inverse $ 9 3ms Voltage Superimposed I . . £ -B - 3 *> M -1 — Maximum Average Rectified •> <A T„ *C) PtV |V) 1N5711 C 8 5 t0 C8St1 SD101A SDtO tB SD101C I. (Amps)

Contextual Info: SAMSUNG ELECTRONICS INC bME D • VSbMlME QDlB^Tb 733 KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 ~ S.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: 120ns (Max.)

Contextual Info: ADV NICRO {MEHORY} Tb D eT| 0 2 S 7 52 Ô 002SÖ71 Q J " T - % - l5 : 2 5 Am10P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with Increasing tempera­

Contextual Info: ADV MICRO -CNENORY} Tb DE^j 0SS7S5A DDSbSMS 5 | ~j5 Am99C60 T -46-23-Û 8 4096x4 CMOS Static Random-Access Memory with Reset "V ; '' 3" i „ADVANCE INFORMATION " " ’ •" 09366UIV DISTINCTIVE CHARACTERISTICS 4096 x 4 organization High Speed :t ! - 25 ns tAA Maximum Commercial

Contextual Info: 10 3.2 8 ON Sj Section l-l Section C-C P/N CONTACT AREA GOLD PLATING 67581-0000 GOLD FLASH 67581-0001 0.76 MICRON GOLD PLATING 67581-0002 67581-0010 67581-0011 67581-0012 'tb .fra m e .A B .P .A M .T Rev. D 2 0 0 4 / 0 6 / 2 8 TYPE QUALITY SYMBOLS ▼ =o

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E N TB DE] 4 4 ^ 2 0 3 92D HD74HC590 0D1D543 b D T ~ tl5 -Z 3 - 7 10543 0 8-bit Binary Counter/Register with 3-state outputs) This device each contains an 8-bit binary counter that feeds | an 8*bit storage register. The storage register has parallel

TBA560

Abstract: TAA630S TBA510 TBA520 TBA970 tba990
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A 3 0 6 5 Video Amplifier T B A 970 Chroma Processing N T S C AiA746, n A 7 8 0 , M 7 8 1 , /uA787, M 7 8 8 Chroma Processing PA L T A A 6 30 S , T B A 510, T B A 5 20 , T B A 540, TB A 560C , T B A 990

Contextual Info: 10 3 |g tB U £ [q ] PULL OUT DIRECTION -uuuuuuuuuuuuu o 00 •a 2.5 O D a / i a) NOTES * ^ □ # ^ 5 43 6 3 - * * 8 i 'ir ia u IN THE PACKAGE PART NUMBER 54363- wy81 DETAILED DIMENSIONS, SEE SALES DRAWING ROR CONNECTOR. 2 50010/ UHL NUMBER OF C0NNECT0RS:2500 PCS/REEL.

Contextual Info: r> -> f -T a <rv_ ADV flICRO {flEHORY} Tb D e | D^SVS^fl □ □ 5 b h c13 b f Am27C512 OTP 5 25 65,536 x 8-Bit CMOS One-Time Programmable ROM OTPROM Am27C512 OTP * ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • • • • • Fast access time — 200 ns

DIN 6924

Contextual Info: Max. 5 5 , 6 3 *0,9 6,5 17 £ M fTi t» ti tb ii nm l fti it nt 1t 1t iTt t imt t t Ti iiPn^ ii ITT Max. 2,54 2,54 7 ,9 19 = 4 8, 2 61 X 66,04 LO CO - ill rights reserved PCB . 1 - - =*= - L U J - - - - - - - - - i . -4 —

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM HD74HCT137 TB DE 4 4 ^ 2 0 3 # 3-to-8-line Decoder/Dem ultiplexer with Address Latch | PIN ARRANGEMENT r-J-a T - , T ¡ ] Vcc B[T - B c^ - C Yi u jy. GL Yi ÏÏ]V i G L^ - A Yfl - C¡ Yi ¡ 2] Yi G i^ - Gi

mb88201

Abstract: MB88202 MB-88201 mb88200 MB88201-P B2115 PULSE 88201-P MB8851 MB8851M MB882
Contextual Info: f tB i 6 19» March 1992 Edition 2 .1A DATA SHEET FUJITSU MB88200 SERIES CMOS Low-end Single-chip 4-bit Microprocessor DESCRIPTION The Fujitsu M B 8 82 00 series C M O S single-chip 4-bit microcomputer family is an economical low-end version of the conventional M B 8850 series. It is

2D1150D-050

Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Contextual Info: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—

EPROM AM27256

Abstract: EPROM 27256 DC amd Am27128A Am27128A EPROM
Contextual Info: ADV I MICRO A m 2 7 6 4 A , A m A m 2 7 5 1 2 8 -B it E P R O M {MEMORY} 2 7 1 2 8 A , A m Tb D E B DES7S2fi DOSbbSS 2 7 2 5 6 F a m ily 7 % * /3 - 7 ? DATA S H E E T A M E N D M E N T In c re a s e d l-_ fo r th e A m 2 7 5 1 2 D C Characteristics table, page 8

PL-255

Abstract: pdmi DF782 R04350B pl255 98PL255
Contextual Info: THIRD ANGLE PROJECTION 4 REV OR A REVISIONS DESCRIPTION ECN No. M 108433 M l2 4 8 0 3 DATE DR AUTH 1 1 /1 4 /0 6 PW NEW RELEASE "04AM03” VAS ”mz”, MODIFIED TB IN TITLE 1 0 /2 3 /0 9 MMG IG DJ SUGGESTED MOUNTING CONFIGURATION FOR D F 7 82 CASE STYLE. ” 0 4 A M 0 5 ”

kb 778 o g 5

Abstract: 3e tRANSISTOR kb 778 UA61
Contextual Info: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t

Contextual Info: D D 2/0 SO LID 2/0 STRANDED SOD ID í . L is te d V tb '/R ID E AWG OR J C WIRE RANGE E 1 3 2 8 8 AWG OR LR7 189 C e rtifie d 2/0 STRANDED SO D ID AWG OR STRANDED STAMP AMP 2 /O W * 125 LOCATE A P P R O X AS SHOWN 2 M A T E R IA L THK: TIN P L 0 . 0 0 2 5 4