8 PIN CERAMIC DIP MICROSEMI Search Results
8 PIN CERAMIC DIP MICROSEMI Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
DE6B3KJ101KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KB4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6E3KJ102MN4A | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6E3KJ472MA4B | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive | |||
DE6B3KJ331KA4BE01J | Murata Manufacturing Co Ltd | Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive |
8 PIN CERAMIC DIP MICROSEMI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
1N6101Contextual Info: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 16-PIN Ceramic DIP WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes |
Original |
1N6101 16-PIN 1N6101 | |
6101A DATA SHEETContextual Info: 6101A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes |
Original |
16-PIN 6101A DATA SHEET | |
1N6101
Abstract: 1N6101 JAN
|
Original |
1N6101 16-PIN 1N6101 1N6101 JAN | |
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range |
Original |
WMS512K8-XXX 512Kx8 MIL-STD-883 MIL-PRF-38534 | |
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range |
Original |
WMS512K8-XXX 512Kx8 MIL-STD-883 MIL-PRF-38534 | |
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range |
Original |
WMS512K8-XXX 512Kx8 MIL-STD-883 | |
Contextual Info: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range |
Original |
WMS512K8-XXX 512Kx8 MIL-STD-883 | |
Contextual Info: WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Revolutionary, Center Power/Ground Pinout JEDEC Approved MIL-STD-883 Compliant Devices Available |
Original |
WMS128K8-XXX 128Kx8 MIL-STD-883 | |
Contextual Info: WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Revolutionary, Center Power/Ground Pinout JEDEC Approved MIL-STD-883 Compliant Devices Available |
Original |
WMS128K8-XXX 128Kx8 MIL-STD-883 | |
Contextual Info: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard |
Original |
EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883 | |
Contextual Info: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard |
Original |
EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 | |
8 pin ceramic dip microsemi
Abstract: CERAMIC FLATPACK
|
Original |
EDI88512CA 512Kx8 512Kx8 8 pin ceramic dip microsemi CERAMIC FLATPACK | |
Contextual Info: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) |
Original |
WMF128K8-XXX5 128Kx8 150ns 128Kx8 MIL-STD-883 MIL-PRF-38534 | |
Contextual Info: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101) |
Original |
WMF128K8-XXX5 128Kx8 150ns 128Kx8 | |
|
|||
Contextual Info: WMS512K8-XXX 512Kx8, MONOLITHIC SRAM, SMD 5962-95613 FEATURES Access Times 70, 85, 100, 120ns MIL-STD-883 Compliant Devices Available Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP Package 300 • 32 lead Ceramic SOJ (Package 101) |
Original |
WMS512K8-XXX 512Kx8, 120ns MIL-STD-883 A0-18 | |
Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby |
Original |
EDI88128CS 128Kx8 EDI88128LPS) MIL-PRF-38535. MIL-STD-883 | |
Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby |
Original |
EDI88128CS 128Kx8 EDI88128LPS) 128Kx8 EDI88128CS | |
Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby |
Original |
EDI88128CS 128Kx8 EDI88128LPS) MIL-PRF-38535. | |
Contextual Info: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple |
Original |
EDI88130CS 128Kx8 EDI88130LPS) EDI88130CS 128Kx8 | |
Contextual Info: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple |
Original |
EDI88130CS 128Kx8 EDI88130LPS) 128Kx8 EDI88130CS | |
5962-96692
Abstract: "NOR Flash" 1996 protect NOR Flash 1996 sector protect "case FF" microsemi
|
Original |
WMF512K8-XXX5 512Kx8 150ns 512Kx8 5962-96692 "NOR Flash" 1996 protect NOR Flash 1996 sector protect "case FF" microsemi | |
Contextual Info: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM FEATURES Access Times 15, 17, 20ns Low Power CMOS Revolutionary, Center Power/Ground Pinout JEDEC Approved Low Voltage Operation • 3.3V ± 10% Power Supply • 36 lead Ceramic SOJ Package 100 |
Original |
WMS512K8V-XXX 512Kx8 | |
WMF512K8-xxx5Contextual Info: WMF512K8-XXX5 512Kx8 MONOLITHIC NOR FLASH SMD 5962-96692* FEATURES Access Times of 60, 70, 90, 120, 150ns Organized as 512Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 pin, Hermetic Ceramic, 0.600" DIP |
Original |
WMF512K8-XXX5 512Kx8 150ns 512Kx8 ILOx32 MIL-STD-883 WMF512K8-xxx5 | |
Contextual Info: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM FEATURES Access Times 15, 17, 20ns Low Power CMOS Revolutionary, Center Power/Ground Pinout JEDEC Approved Low Voltage Operation • 3.3V ± 10% Power Supply • 36 lead Ceramic SOJ Package 100 |
Original |
WMS512K8V-XXX 512Kx8 |