7Z TRANSISTOR Search Results

transistor ECG123a

Abstract: ECG123A ECG755 033FF
Contextual Info: PHILIPS E C G INC 17E D Lit.sa'isa 0GD3MH1 i m ~7z ~7y-o5’'-0i ECG755 CLASS “A” AUDIO DRIVER semiconductors 0.025 03535 E C Q 755 ij designed for driving Class "A " PNP power output- transistor stage applica­ tions. • Drives to 4 Watts of Output Power

A 3121 IC

Abstract: bu2042 BU2040F BA634 BU2042F of ic 3121 A6251
Contextual Info: ROHM CO LTD 7 0 2 0 ^ MDE D 0003245 .'- l— rm iii - *CTWIJ p i;:n i . a IC T ESRHM J 7z- '/ 3 ~/sr T - 'K . - C ñ - O S ' • ICs for Industrial Equipment r -V 4 -û 7 -/S - • Drivers Function Type Package Configuration No. of pins Features Reference

HCF4512BE

Abstract: 4512B
Contextual Info: S cos/mos S S-THONSON 37C D | O O m ia i 7 | K' iS hcc/hcf « i 2B INTEGRATED CIRCUIT 7929225 r ifin ii i? i S G S S E M IC O N D U C T O R CORP * '7zàr?~/hS"f 8 -C H A N N E L DA TA SELECTOR • • • • • • • 3-STATE OUTPUT ST A N D A R D IZED SY M M ET R IC A L O UTPUT C H A RA C TER ISTIC S

4512B

Abstract: bd 426 4512 HCF4512 phl 7 s 715 HCC4512BK 4512BD
Contextual Info: S cos/mos S S-T H O NSON 37C D | INTEGRATED CIRCUIT 7929225 S rifinii i? O O m ia i 7 | K' iS hcc/hcf « i2B i G S SEMICONDUCTOR CORP '7zàr?~/hS"f * 8 -C H A N N E L D A TA SELECTOR • 3 -STA T E O U T P U T • S T A N D A R D IZ E D S Y M M E T R IC A L O U T P U T C H A R A C T E R IS T IC S

Contextual Info: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1

BDX67

Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66 darlington power transistor 10a BDX66A BDX66B BDX66C
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bt.53^31 D G l T n ? 7 ■ BDX67; 67A BDX67B; 67C T-33-H7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for aûdio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,

D 1991 AR

Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
Contextual Info: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.

LTE42012R

Abstract: 5j12 transistor 307A
Contextual Info: N AMER PHILIPS/DI SCRETE GbE D ^ 5 3 ^ 3 1 D 0 m *177 LTE42012R T-ZZ-OÉr M ICROW AVE LINEAR POWER T RA N SISTO R N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to a frequency of 4,2 G H z in c.w. conditions in military and professional applications.

Philips BGY36 VHF Power amplifier Module

Abstract: BGY36 BGY33 Philips bgy32 BGY35 BGV33 BGY32 12p capacitor VB212
Contextual Info: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband amplifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The deviceswill produce 18 W output into a 50 Î2 load. The modules consist of a two stage RF amplifier using npn transistor chips, together with lumpedelement matching components.

BGY36

Abstract: BGY33 BGY32 BGY35 77209 vHF amplifier module
Contextual Info: BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range of broadband am plifier modules designed for mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 f i load. The modules consist of a tw o stage RF amplifier using npn transistor chips, together w ith lumpedelement matching components.

ferrite 4312

Abstract: SL 100 NPN Transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.

7z transistor

Abstract: J401 PH2226-50M
Contextual Info: ,s= 7-z E -= 2= .- = = FE an AMP company * Radar Pulsed Power Transistor, 5OW, loops Pulse, 10% Duty 2.2 - 2.6 GHz PH2226-50M Features l l l l l l l ,900 22.85 NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

BLV97

Abstract: IEC134
Contextual Info: PHILIPS INTERNATIONAL MIE D m 711002b Q0S73ÔÔ ö ‘' L IPHIN BLV97 r - 3 3 - // UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor in SOT171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.

ferrite 4312

Abstract: ferrite beat philips rf choke ferrite CF-800 lb533
Contextual Info: N AMER PHILIPS/DISCRETE tTE J> ^53=131 DDEÔ761 71S M A P X WÊ BLT92/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

transistor ft 960

Abstract: blt90 DB8900
Contextual Info: D N AMER PHILIPS/DISCRETE • bbS3^31 0Q2ô7b7 34S H A P X B LT90/SL A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 90 0 M H z communications band. This device has been designed specifically for class-B operation.

BFQ42

Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Contextual Info: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is

bry39

Abstract: BRY39 circuit
Contextual Info: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate

Contextual Info: Provisional Data Sheet No. PD - 9.1708 International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHNA7Z60 IRHNA8Z60 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD 30 Vo It, 0.009ft, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y

BLX69A

Abstract: BLX69 7Z66 TRANSISTOR D 1978
Contextual Info: PH I L IP S I N T E R N A T I O N A L MAINTENANCE TYPE 41E D • 711002b, D0E7Ö1S 1 I PHIN BLX69A r - 3 3 - n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and Is

BLV11

Contextual Info: N AMER PHILIPS/DISCRETE bbsa^ai □QañiD'i sqs BLV11 b^E IAPX JL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

951F

Contextual Info: BD949F; BD951F ^BD953F; BD955F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors each in a SO T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 950F, BD 952F, BD 9 5 4 F and BD 956F. Q U IC K R E F E R E N C E D A T A

IT1701

Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Contextual Info: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss

transistor 2n3053

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA

BSV64

Abstract: 593221
Contextual Info: BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA Collector-base voltage open emitter v CBO max.