7Y 6 Search Results

Contextual Info: 3 4 2 2 6 1 8 EXAR CORP XR-400 I2L Master-Chip Chip Size: 119 * 149 mils 5-Output l2L Gates: 256 Bonding Pads: 40 Max. Operating Voltage: 7Y NPN Transistors: 45 4-Collector PNP Transistors: 12 Schottky-Blpolar I/O Interfaces: 18 910 04771 7"* ~ / .3 ' - V

Contextual Info: CENTRONIC LTD 45E D • IWlfl? T ■ CENT 7Y/-y'S* TECHNICAL DATA SHEET Centronic Silicon Photodetectors Opto Hybrid Series O SI 5-50M/2k The OSI 5-50M/2K range of products provide higher gain than our other standard T05 packaged, hybrid detectors. These devices are

Contextual Info: 10 ;± e CONFIDENTIAL NO TES MATERIAL /'A Tv A ij&6# LOP ] U L92V -0 ( * ] HOUSINC:LIQUID C RYSTA L POLYMER UL9AV-0 (COLOR:BLACK 7 - y ±/l TERMINAL COPPER ALLOY FITTING NAIL COPPER ALLOY 2 7y PLATING A - $ i ^ TERMINAL . y>T #7 • EE GOLD (PITCH) UNDER PLATING : NICKEL

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15

Contextual Info: H E » • i ' W G " D 03j ^ ; 7y ^ " ANA □ A N ALO G Internally Trimmed D E V IC E S _Integrated Circuit Multiplier AD532 F EA T U R E S Pretrimmed to ±1.0% A0532K No External Components Required Guaranteed ±1.0% max 4-Quadrant Error (AD532K)

transistor ECG123a

Abstract: ECG123A ECG755 033FF
Contextual Info: PHILIPS E C G INC 17E D Lit.sa'isa 0GD3MH1 i m ~7z ~7y-o5’'-0i ECG755 CLASS “A” AUDIO DRIVER semiconductors 0.025 03535 E C Q 755 ij designed for driving Class "A " PNP power output- transistor stage applica­ tions. • Drives to 4 Watts of Output Power

Contextual Info: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`

Contextual Info: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`

Contextual Info: D1RFRD006 REV ECD *1 6 .8 9 ± 0 ,2 0 7R+n REVISION RECDRD DESCRIPTION DRFT CHKD pfi GREEN OR ORANGE LED Ni_V • \l_y • -i J std std y 7y 8t I—1 - MECHANICAL: 1. SHIELD MATERIAL : CARTRIDGE t=0.25mm. PLATED Nickel 50u &OPTION PLATED Sn 100u Tinned grounding tab,H=2.00mm Min ,W=2.1 Om

Contextual Info: 864/ @B2;9<91AB?5 49> ?5:1F 6KGVWTKU ] ] ] ] ] Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib ] Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`

51T10

Abstract: 65KZ 2SC4018K 2SC4128 T106 T107 T146 T147
Contextual Info: h ~7y y 7. £ /Transistors 2SC4018K/2SC4128 x hi $ * y t NPN v U □ > h ÿ > y X $ Epitaxial Planar NPN Silicon Transistor 2 S C 4 0 1 8 K • ^-ffÎ^Æ ia/Dimensions Unit : mm 1) 2 SC4 1 2 8 2 SC4 0 1 8 K C0b=1.8pF(Typ.) 2) l. 3 ± 0 0 .6 5 ( i) ] • Features

TA7359P

Abstract: TA7359 TA7727P 4558 pre amplifier circuit 7359P 1720S IC D 4558 TA7797P 4558 audio operational f 4558 m
Contextual Info: TOSHIBA-. ELECTRONIC 02 » ^ ^0^7247 0D17S0S 7 J ” 9ÜS/'Í4 ? TOS HI BA . E L E C T R O N ÏC 02E 17205 TA7359P TA7727P D r - 7y-o5-oi AUDIO DUAL PREAMPLIFIER. Unit in mm The TA7359P and TA7727P are dual low noise pre 2&0 MAX amplifier improved on operational amplifier

anzac frequency

Abstract: anzac AT-200
Contextual Info: M / A - C Ô M INC/ AN ZA C DIV 14E D MMICABSORPTIVEVVA' MODEEAT-20Qg « i f f i B S L 4 2 1 7 7 GG032Et> fl î f '7 * - '7y ~/3 Low Insertion Loss, 1.2 dB Typical -o Fast Switching Speed, 4 ns Typical Ultra Low DC Power Consumption Outstanding Flatness Guaranteed Specifications*

Contextual Info: 6 A X M ontageloch-M ittelIinie mounting hole center-line a l l e Löcher all holes Lochbild 0 0 ,0 5 (board d r illin g s ) 3,85:0-2 0 ,0 5 01 ±0,1 P o s i t i on position 16 I JZ -t-t T f f f T ' T f f f f ? J —a 15x 2,54 46 ,9 •b / / 7y. / / / /

ELLS 110

Abstract: FR 151 diode 30S3 ERD75 lftb
Contextual Info: ERD75 2 oa —K : Outline Drawings FAST RECO VERY DIODE i Features Planer chip • V 7Y l) i J ' <1) — • z.9"A'Tfc Soft recovery type Stud mounted • E JiS s : Applications • Switching power supplies • ^^i)V • W t i& S i& S / lE « ; Free-wheel diode

74LS268

Abstract: 74468 L1327 74LS367 81LS98 A4016 IC-JJ
Contextual Info: — 238 — 7 4 4 6 8 8 1 LS98 VCC 5 2 8A Octal 3-State Bus BY 7 A 7Y 6A 6Y 5A 5Y IqJ IjjJ H> 'fh 1*1 fh fh LiinininiMtinininiMJ G1 1A 1Y 2A 2Y 3A 3Y 4A 4Y GND 81 L S 98 O 74LS367, 74LS268«8bit«fe o 74798 ¿ M b ms K-h IN OUT H ALSK F S AS AC ACT HC HCU

Contextual Info: 7 8 THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT - R E LEA S ED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC A L L RIGHTS R E S ER V ED . D IS T AG REVISIONS LTR L 85 OWN APVD REVISED PER EC OS12 - 0 5 5 0 - 0 4 12APR05 RR MY I! 168 7Y I m 84 St

Contextual Info: NOTE*. '/ £ r L i /\*7y - 7" 2. ^ ^ 3. % /4 ^ 'ilr r n /} -5. - it ij i! n 3. THE MATINGi / 7 Z/?Z 2. A P PLIE D /702& 0. COUNTERPART CONTACT . % PART NUMBER I /?Z/?2 8 190280 3« TO BE MATE \a/ItH CAP HGUSiMiK^ ! t72f 9l' 3 MOO THLY ^ T O BE MEASURED .BETWEEN R a 3 ] /4N P 2

fu20

Abstract: FU200 4a2d H-17 H-18 H-19 2-108a2a
Contextual Info: - 129 = í > U tiít 6A TO-220 T . = 25'C r,C ?- 7y= 125“C , I drm DTM 6C N D TM 6E-N D T M 6 G -N 200 400 600 # fi Vos.« I n RMS) I 2 -t 18 ( 1 = 1 ~ 1 0m s) A 2S Â l = 20Q iGAf (\0/„\ u u ij= n r/ yi 4 Ih A / /is di/dt °c -40-125 T,i* dv/dliO

PN544

Abstract: zd 859 c8hh FXP pj ba 9759
Contextual Info: =;92 EG7@>A>6FGD: 9>C D:?6K ;PL[\YPZ b b b b b Kdbc n`indodq`A 8<7hY O\o^cdib no\i_\m_8= kdi LF nj^f`o Kdbc nrdo^cdib ^\k\^dotA 89<XD 6 @7Y Edapm^\o`_ ^jio\^on Hkjst n`\g`_ ajm \pojh\od^ r\q` njg_`mdib \i_ ^g`\idib b Udibg` nd_` no\]g` \i_ g\o^cdib otk` \q\dg\]g`

HD 1077 O

Abstract: S453DE S453DH S453FE S453FH S453GE S453GH S453HE S453IE S453IH
Contextual Info: R S H ELECTRON/SENSITRON IflE D • 7 S 0 3 b 5 0 00000=17 7 - " P 2.3-07 ▼&£/VS/7y?Q/V_ C SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 FAX 516 242 9798 T E C H N IC A L S P E C IF IC A T IO N S

Contextual Info: 10 3 .7 (3.7) F F C f f iA J K F F csA gsa INSERTION DEPTH OF FFC (1.025) (1 .7) ' LENGT H TO CONTACT POINT • CKT. NO. I SIDE (CHAMFERING TO INDICATE CKT.NO. I) If w - 11 1 1 1 T SECT.Y-Y (EVEN CKT.) (ODD CKT.) U 7Y J V 'J 'J HOUSING ! h ^ f y ^ f

H-17

Abstract: H-18 H-19 TM1020M TM1040M 1040M
Contextual Info: T M 10 2 0 M , T M 10 4 0 M - •W &0#-S ]-' ■T O -220tfiiJ&#39;A ■ M Ä W W tt ge ^ I drm Vtm líd, v TM1020M TM1040M 200 400 V'fjs.v Vii RM /riHMS l 2-t : # 1Í V 1 il Æ 7'j= 125‘C, Vc=Vbfi.w 7y = 25’C, Ï t m = 14A T ) = 25‘C Vgt £ h ') A 5 3 1

Contextual Info: n/A-COM ADV S E M I C O N D U C T O R 27E D sm aiaa oDooast. t T>7Y‘/3' 0[ MA4GM321T-500 GaAs MMIC DC -1 8 GHz Features • DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ SMALL SIZE ■ ATTENUATION FLATNESS DC-18 GHz ± .2 dB FOR 7 dB ATTENUATION ■ LOW CONTROL CURRENT