7TTI4145 Search Results

TL555

Abstract: TL 555 KM44C256 KM44C258 IC 555 pin DIAGRAM samsung 256Kx4 static RAM
Contextual Info: SAMSUNG SEMICONDUCTOR INC Tfl DEj| 7Tti4145 0 0 0 5 5 0 7 Í XT ^^ 4 " 5 'Z 7 ,-t'l /r f V U -'Z . ' ' ' ' PRELIMINARY SPECIFICATION KM44C256/KM44C258 CMOS DRAM 256KX4 Bit CMOS Dynamic RAM FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C256/8 Is a CMOS high speed

Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KS556D

Contextual Info: SAMSUNG SEM IC ON DUCT OR INC =16 DE | 7 ^ 4 1 4 2 KS556 0004571 T | i871„ , P C M O S INTEGRATED CIRCUIT C M O S TIMER The KS556 is monolithic integrated circuit fabricated using C-MOS process. Due to high impedance inputs Trigger, Threshold, Reset , itis capable of producing accurate time delay using less expensive,

IRF130

Abstract: irf131 142SA
Contextual Info: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure