7TST537 Search Results

Contextual Info: _ , M S G S-THOMSON 07C D | 7TST537 0 0 m a 3 2 0 I 67C 14596 D 7^55.- J 3 - J S P a g e d M em ory riV rr^ ^ T " " M a n a g e m e n t k • ^S z 8015pmiviü Unit Features • PMMU architecture supports multiprogramming systems and virtual memory implementations.

pj 3059

Abstract: LS161
Contextual Info: S G S-THOnSON D7E D • 7TST537 DDlhlia 0 I MS160/161/162/163 H T54LS160A/161A/162A/163A] T74IS1B0/161/162/163 ; -1 LOW POWER SCHOTTKY INTEGRATED CIRCUITS 67C 15241 LS16 0 /1 60A /16 2 /1 62A: BCD DECADE COUNTERS LS161/161 A /16 3 /1 63A: 4-B IT BINARY COUNTERS

Contextual Info: TTiTEB? 0D4D225 3T1 • S 6 T H SbE » T - £ 2 -0 *1 M54HC540/541 M74HC540/541 S G S -T H O M S O N ■ IL IÊ in S O R O O Ê i HC540 OCTAL BUS BUFFER INVERTING 3-STATE HC541 OCTAL BUS BUFFER (3-STATE) S G S-THOMSON ■ HIGH SPEED tpD = 11 ns (TYP.) at V c c = 5V

ST 7915

Abstract: LF247 LF247AN LF347AD CDIP-14
Contextual Info: 7T5T237 S G S -T H O M E H GGESTMf l S LF147/A/B LF247/A/B LF347/A/B S O N SLC S G 3GE S-THOMSON » J-FET INPUT QUAD OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION

Contextual Info: SGS-THOMSON TEA5705 m ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR For com plete specifications refer to "AUDIO POWER & PROCESSING ICs" PLAY-BACK MODE • LOW NOISE AND WIDE BAND AMPLIFIERS FOR 4 HEADS ■ AUTOMATIC OFFSET CANCELLATION BE­ TWEEN THE 2 SELECTED HEADS

A/M54/74HC597

Contextual Info: 5bE D • 7*^537 DDHOabM QM1 M SGTH _ / S T SGS-TffOMSON A 7f T -V L -o l-a M54HC597 M74HC597 S G S-TH0HS0N 8-BIT LATCH/SHIFT REGISTER ■ LOW POWER DISSIPATION lCC = 4 MAX. at TA = 25°C ■ HIGH NOISE IMMUNITY V NIH = V NIL = 2 8 % V CC (M in .) ■ OUTPUT DRIVE CAPABILITY

TSG8514

Abstract: sf.c thomson TB 1237 AN 8th order lowpass butterworth filter
Contextual Info: SbE £ Z T “ 7# ]> • 7^2^537 003^305 S G S -T H O M S O N TT5 ■ S 6 T H s 6 s - thohson TS G 8514 T - 4 V - 0 5 * SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ BUTTERWORTH TYPE ■ 8TH ORDER ■ STOPBAND ATTENUATION : 74dB typ AT 3.6 x Fc ■ PASSBAND RIPPLE : MAXIMALLY FLAT

tda1111

Abstract: TDA1111 sp
Contextual Info: 7fiC D I 7 ci5liE37 □□D7S73 □ S G S-THOMSON C ASE / BOITIER C B -1 7 3 The T D A 1 111 is a pow er a m p lifie r, specially intended fo r use aud io high fid e lity a m p lifie r. it îs supp lie d in special case fe a tu rin g v e ry lo w th e rm a l resistance.

Contextual Info: S G S -1 H 0 M S 0 N * 7 /. TD A 7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY PRODUCT PREVIEW • VERY HIGH OPERATING VOLTAGE RANGE ±40V ■ DMOSPOWER STAGE ■ HIGH OUTPUT POWER (UP TO 80W MUSIC POWER) ■ MUTING/STAND-BY FUNCTIONS ■ NO SWITCH ON/OFF NOISE

Contextual Info: r= 7 S G S -T H O M S O N TS7514 K fflD © [H L[i© Ü ,[ M ! l D g § PROGRAMMABLE V.23 MODEM WITH DTMF • PROGRAMMABLE MODES : - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection

Contextual Info: BTA08 B/C BTB08 B/C / = ? SGS’THOMSON liiltlDöOEiLiiOTaaDgi STANDARD TRIACS FEATURES • HIGH SURGE CURRENT CAPABILITY . COMMUTATION : dV/dt c> 5 V^is ■ BTA Family: INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED: E81734) Q DESCRIPTION A The BTA/BTB08 B/C triae family are high perform­

transistor 5cw

Abstract: 4069B 5CW 71 hcf4555b transistor 5cw 13
Contextual Info: r z Ä 7 7 # S G S -T H O M S O N H C C / H C F 4 5 5 5 B M H C C / H C F 4 5 5 6 B œ m iO T û IQ G i DUAL BINARY TO 1 OF 4 DECODER/DEMULTIPLEXERS 4555B O UTPUTS HIG H ON SELECT 4556B O UTPUTS LOW ON SELECT . EXPANDABLE WITH MULTIPLE PACKA3ES . STANDARD, SYMMETRICAL OUTPUT CHAR­

2N3930

Contextual Info: * T i S C S -T H O M S O N ¡[LKgTTIfMDÙt - s £ S TH0MS0N 2N3930 2N3931 HIGH-VOLTAGE AMPLIFIERS DESCRIPTIO N The 2N3930 and 2N3931 are silicon planar epitaxial PNP transistors in Jedec TO-18 2N3930 and Jedec TO-39 (2N3931) métal cases. Both devices feature high voltage, high gain, low

2114D

Abstract: ET2147H-1
Contextual Info: G fl7I S-THOMSON The E T 214 7H is a 409 6-w o rd by 1 -bit static random access memory fabricated usin g N-channel silicon-gate technology X -M O S . All internal circuits are fully static and therefore require no clocks or refreshing for operation. The data is read out non destructively and