7S00 Search Results

Contextual Info: DOUGLAS RANDALL, INC 40 High Voltage Relays HV Series 1A or 1B Top View 2A Top View OPTION: • Relays available in form B up to 7S00V. NOTES: To Order, specify as follows: 6HV1A 35 is a 6HV1A relay w ith 3500VDC switch. I The peak pow er rating (Holdoff Voltage Times Load Current) must not exceed SOW peak.

MA05B

Abstract: MO-178 NC7S00 NC7S00M5 NC7S00M5X NC7S00P5 NC7S00P5X
Contextual Info: Revised June 2000 7S00 TinyLogic HS 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard

Contextual Info: R 0 ASSOCIA TES INC fl?]> 7S0DSQD □□□□2b4 .2 D B -IS -U DC“DC CONVERTERS ROASSOCIATES 4-6 WATTS LOW PROFILE .375" SERIES CX DESCRIPTION The RO CX Series DC-DC converters use a 100 KHz switching frequency to provide an extremely low profile package. The DC-DC converters are

MA05B

Abstract: NC7S00 NC7S00M5 NC7S00M5X
Contextual Info: 7S00 TinyLogic 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard both inputs and output with respect to the

MA05B

Abstract: NC7S00 NC7S00M5 NC7S00M5X NC7S00P5 NC7S00P5X SC70-5
Contextual Info: 7S00 TinyLogic HS 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard

NC7S00

Abstract: mark a7 sot23 national semiconductor cmos databook SOT 23 A7 diode C1996 MA05B NC7S00M5 NC7S00M5X MARK AB 5PIN
Contextual Info: 7S00 Tiny 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate in National’s TinyPakTM package Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range ESD protection diodes inherently guard both inputs and output with

MA05B

Abstract: MO-178 NC7S00 NC7S00L6X NC7S00M5X NC7S00P5X
Contextual Info: Revised April 2002 7S00 TinyLogic HS 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard

il032

Contextual Info: SIEMENS ILD32 QUAD CHANNEL ILQ32 DUAL CHANNEL PHOTODARLINGTON OPTOCOUPLER FEATURES » • • • • • • Very High Current Transfer Ratio, 500% Min. Withstand Teat Voltage, 7500 V High Insulation Resistance, 10” Cl Typical Low Coupling Capacitance Standard Plastic DIP Package

Contextual Info: 750D5DD 0GGG352 bSS WA H aNoVeRTER W o rld 's M o s t A d va n ce d Ultra H igh Density DC-DC Converters DC-DC Converters, 100-120 Watt Family Evaluation Boards Available Up to I 2 0 W atts 4 8 and 3 0 0 V D C Input DESCRIPTION NanoVerter modules are high density DCDC converters designed for use in tele­

mark 7S00

Contextual Info: Revised March 1999 EMICQNDUCTGR tm 7S00 TinyLogic HS 2-Input NAND Gate Features • S pace saving SO T23 or SC70 5-lead package ■ High speed: tpp 3.5 ns typ ■ Low Q uiescent Power: Iqq < 1 j^A both inputs and output with respect to th e V qq and GND

1H0132

Abstract: 8S02 7H9749 9J0003 9H4501 0H1055-1 2E0215 49F8192 7J0202 7-H-97
Contextual Info: PAGE 1 OF 8 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-49F8192A FLASH MEMORY RELIABILITY DATA - 150°C RETENTION BAKE (PLASTIC) - 125°C DYNAMIC LIFE TEST (PLASTIC) - 15 PSIG PRESSURE POT - EXTENDED TEMPERATURE CYCLING - 131°C/85% RELATIVE HUMIDITY HAST TEST

LQ coil

Abstract: 7s00 LQG11A2N7S00
Contextual Info: CHIP INDUCTORS SURFACE MOUNT CHIP INDUCTORS LQG11A SERIES .«<1 m u fía tn ^ //M onitor in F/cctw /tics The LQG11A Series is designed to have stable characteristics in high frequency range by applying cin integrated multilayer process. FEATURES APPLICATIONS

Contextual Info: SEM ICONDUCTO R ru 7S00 TinyLogic 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes in­

Contextual Info: 6 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 5 2 3 4 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIO NAL RIGHTS DI ST LOC 19 REV I 5 I0N 5 00 GP RESERVED. ZONE RELEA5EB A REV PER REV RER REVISED REV PER

HY5116400A

Contextual Info: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Contextual Info: Insert Configuration 20 AWG 300V-1A AC/DC* 3 Contact Shell Size 8 6 Contact Shell Size 10 UNGND A503 UNGND A506 10 Contact Shell Size 12 19 Contact Shell Size 14 UNGND A510 UNGND A519 26 Contact Shell Size 16 32 Contact Shell Size 18 UNGND A526 UNGND A532

PD78P014CW

Abstract: QFN-64 socket ANDO AF-9704 EPROM PROGRAMMER minato Model 1890A 78063GF HPD78011BCW af-9703
Contextual Info: THIRD-PARTY DEVELOPMENT TOOLS 14. THtRD-PARTY DEVELOPMENT TOOLS T h e 78K /0 S e rie s a re sup p orted by the following third party developm ent tools in addition to the N E C d evelop m en t tools. F o r d e ta ils of host m a ch in e s to w hich e a ch developm ent tool is applicable, contact the followings:

Contextual Info: H Y 5 1 4 4 1 0 B » H Y U N D A I S e r ie s 1 M x 4-bit C M O S D R A M with Wrlte-Per-BK PRELIMINARY DESCRIPTION The HY514410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

J-Squared Technologies

Contextual Info: S a l e s re p r e s e n t a t i v e s S a k s re p r e s e n t a t i v e s DOMESTIC REPS ALABAMA Concord Component Reps, Inc. 190 Lime Quarry, Suite # 102 Madison, AL 3 5758 205 772-8383 ARKANSAS Southern Sutes Marketing, Inc. 1702 N Collins Blvd., Suite # 2 5 0

t54 sot-23

Abstract: 7s00 NC7S00 4011 CMOS NAND GATE MA05B NC7S00M5
Contextual Info: ß February 1996 7S00 Tiny 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate in National’s TinyPak package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad V ex range. ESD pro­

7812 TO-3

Abstract: 7805UC 7805KC TRANSISTOR 7812 DIAGRAM 7812UC 7812 TO3 PACKAGE 7815KC T0220 7805uc a7800 7824KC
Contextual Info: Fairchild Sem iconductors 7800 Series Positive Voltage Regulators G E N E R A L D E S C R IP T IO N T h e fiA7800 s e rie s o f th re e -te rm in a l p o s itiv e v o lta g e re g u la to rs a re c o n s tru c te d u s in g th e F a irc h ild P la n a r e p ita xia l p ro c e s s . T h e s e re g u la to rs

Contextual Info: S E M IC O N D U C T O R tm 7S00 TinyLogic HS 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication as­ sures high speed and low power circuit operation over a

CS 1001-25

Abstract: 130232 thyristor cs 1702-38 CS thyristor ACS 53 cs 1104-55 CS 110 thyristor CS 370 thyristor 130238 CS 5800
Contextual Info: R PI C LTDi "fl3 POWER SEMICOND Je T Typ/type Vdrm Vrrm •trms V A T A V i^c •tavm Tc = 85°C A/°C CS 601-18 Io 1 CS 601-20 io 1 CS 601-2310 1 CS 601-24 Io 1 CS 601-25 io 1 1800 2000 2000 2300 2400 2500 BOO/65 CS 661-27 k 1 CS 661-30 Io 1 CS 661-32 Io 1

NC7S00L6X

Abstract: MA05B MO-178 NC7S00 NC7S00M5X NC7S00P5X
Contextual Info: Revised May 2003 7S00 TinyLogic HS 2-Input NAND Gate General Description Features The 7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard