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    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		rh011h2007-10b120fismp2a5100ya868c12+8ya868c152sk4004yg865c10f5049diode 3a05diode smd sj 24diode smd sj 09diode smd sj 28 PDF

    7MBP75RU2A120

    Abstract: 7MBP75RU2A 7mbp75ru AC2500 H04-004 P611 300W HI FI AMPLIFIER 7mbp75ru2a-120 diode marking code 7-7-7-7
    Contextual Info: q¿0-fr0 M70H This m aterial and the inform ation herein is the p ro p e rty o f Fuji E le ctric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, o r disclosed in any w ay whatsoever fo r the use o f any third party nor used fo r the m anufacturing purposes w ithou t the express w ritte n consent o f


    OCR Scan     		7mbp75ru2a120h04-004-07bh04-004-03a7mbp75ru2a+77mbp75ruac2500h04-004p611300w hi fi amplifier7mbp75ru2a-120diode marking code 7-7-7-7 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max1752mbi600tn-060v2mbi450un-120v2mbp600un-120v+102mbi450u4e-1202mbi400u4h-1202mbi300u4h-120thyristor tc1226mbp75ru2a1202mbi75u4a-1207mbp75ru2a1202mbi75u4a1207mbr25sa120 052mbi200u4h-120 PDF