7A TSSOP8 Search Results

Mosfet

Abstract: SSF2816E SSF2816
Contextual Info: SSF2816E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 16.5mohm(typ.) ID 7A TSSOP-8 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

VSSOP8

Abstract: 74HC 74HC3G34 74HC3G34DC 74HC3G34DP 74HCT3G34 74HCT3G34DC 74HCT3G34DP
Contextual Info: 74HC3G34; 74HCT3G34 Triple buffer gate Rev. 04 — 9 March 2006 Product data sheet 1. General description The 74HC3G34; 74HCT3G34 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL. Specified in compliance with JEDEC standard no. 7A.

SSF2816E

Abstract: SSF2816 S-SF2816 2816E
Contextual Info: SSF2816E DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Mosfet

Abstract: SSF2816EBK
Contextual Info: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V

Mosfet

Abstract: SSF2816EB
Contextual Info: SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V

Contextual Info: GDSSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Contextual Info: GDSSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Contextual Info: GDSSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Contextual Info: Advanced Power Electronics Corp. AP9923GEO-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Support 1.8V Gate Drive D1 G1 D2 G2 Low On-resistance RoHS-compliant, halogen-free S1 S2 BVDSS -12V R DS ON 25mΩ ID -7A Description

Contextual Info: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)

Contextual Info: SEMICONDUCTOR KMC7D0CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain to Source On Resistance.

9923GEO

Abstract: AP9923GEO
Contextual Info: AP9923GEO RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance G2 S2 ▼ Small & Thin Package D2 ▼ Capable of 1.8V gate drive S2 TSSOP-8 S1 D1 BVDSS -12V RDS ON 25mΩ ID G1 S1 -7A D1 Description

CN20CA

Abstract: KMC7 KMC7D0CN20CA
Contextual Info: SEMICONDUCTOR KMC7D0CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain to Source On Resistance.

S2G14

Abstract: S2S13
Contextual Info: SEMICONDUCTOR KMC7D0CN20C TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain-Source ON Resistance.

SSG4435

Contextual Info: SSG4435A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 27 @VGS = - 10V - 7A - 30V 42 @VGS = - 5V 1 2 3 50 @VGS = - 4.5V 4 D (1,5,8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.

Contextual Info: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)

Mosfet

Abstract: SSF2814E
Contextual Info: SSF2814E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

smd transistor g1

Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

MOSFET TSSOP-8 dual n-channel

Contextual Info: SSG6968N Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 20 @VGS = 4.5V 28 @VGS = 2.5V 7A 20V 1 45 @VGS = 1.8V 2 3 4 D1 (1) D2 (8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.

Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

ssg8

Abstract: SSG8206A 7A TSSOP-8
Contextual Info: SSG8206A Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 16V 7A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 20 @VGS = 4.0V 1 35 @VGS = 2.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TSSOP-8 package.

MOSFET TSSOP-8 dual n-channel

Contextual Info: SSG8810A Common Drain Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V TSSOP-8 8 RDS(ON) (mΩ) Max ID (A) 7 6 5 20 @VGS = 4.5V 7A 20V 1 24 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

SSG8822

Abstract: MOSFET TSSOP-8 MOSFET TSSOP-8 dual n-channel ssg8
Contextual Info: SSG8822 Common Drain Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V TSSOP-8 8 RDS(ON) (mΩ) Typ ID (A) 7 6 5 18 @VGS = 4.5V 7A 20V 1 24 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

MOSFET TSSOP-8 dual n-channel

Contextual Info: SSG4918 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 8 RDS(ON) (m ) Max 7 6 5 23 @VGS = 10V 7A 30V TSSOP-8 1 43 @VGS = 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G (4) G (5)