7A SOIC8 Search Results

Contextual Info: P07M03LV N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Preliminary PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 39mΩ -7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2804HVG

Contextual Info: P2804HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 40 28mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

p07n03lv

Abstract: Field Effect Transistor niko-sem "Field Effect Transistor" p07n03
Contextual Info: P07N03LV N-Channel Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30 20mΩ 7A SOP-8 D G : GATE D : DRAIN S : SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P07D03LV

Abstract: NIKO-SEM
Contextual Info: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS

P2503HVG

Abstract: P2503 niko-sem
Contextual Info: NIKO-SEM P2503HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 25mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P07D03LVG

Abstract: Niko Semiconductor nikos niko-sem
Contextual Info: P07D03LVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

niko-sem

Contextual Info: P-Channel Logic Level Enhancement NIKO-SEM P07P03LV Mode Field Effect Transistor Preliminary SOP-8 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30 37mΩ -7A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2103HVG

Abstract: 21m7a transistor j 127 niko-sem
Contextual Info: NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 21mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

SEM 2004

Abstract: NIKO-SEM Niko Semiconductor P2804 P2804NV
Contextual Info: P2804NV N- & P-Channel Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOP-8 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2103NVG

Abstract: P2103NV p2103n P-Channel Enhancement Mode Field Effect Transistor
Contextual Info: NIKO-SEM P2103NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2103NV

Abstract: nikos p2103n niko-sem
Contextual Info: NIKO-SEM P2103NV N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P2804NVG

Contextual Info: P2804NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 40 28mΩ 7A P-Channel -40 65mΩ -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

P2803NVG

Abstract: SEM 2005 niko-sem p2803nvg NIKO-SEM P2803 "Field Effect Transistor" Field Effect Transistor p2803n DSA0025594 P-CHANNEL
Contextual Info: NIKO-SEM P2803NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 27.5mΩ 7A P-Channel -30 34mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

SEM 2004

Abstract: P3503QVG NIKO-SEM p3503 Field Effect Transistor Niko Semiconductor nikos
Contextual Info: NIKO-SEM P3503QVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 25mΩ 7A P-Channel -30 35mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

AO4450

Contextual Info: AO4450 40V N-Channel MOSFET General Description Product Summary The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS

Contextual Info: AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V)

AO4449

Contextual Info: AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)

AO4449

Contextual Info: AO4449 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4449 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product

AO4449

Contextual Info: AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)

Contextual Info: AO4449 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4449 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product

AO4449L

Abstract: AO4449
Contextual Info: AO4449L P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4449L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO4616

Abstract: 20V P-Channel Power MOSFET 500A
Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.