7B166 Search Results

Contextual Info: — =Z1- CY7B164 7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs

Contextual Info: CY7B164 7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a­ nized as 16,384 x 4 bits. Easy m em ory ex­

CY7B166

Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45
Contextual Info: CY7B164 7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)

Contextual Info: CY7B164 7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed T h e CY 7B164 and CY 7B166 are highperfo rm an ce B iC M O S static R A M s orga­ nized as 16,384 x 4 bits. Easy m em ory ex­ pansion is provided by an active LO W

Contextual Info: = - CY7B164 7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)

7B164-15

Abstract: 910U
Contextual Info: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and 7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­

C461B

Abstract: D1162 B11B6
Contextual Info: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 1212111 21345164789AB1C9DABE1F112111 1 1!31"1 21F3FE1111 F1!"#8$1 2 12A#1C$$%&1%' % 1D%*%1

i6612

Contextual Info: CY7B164 7B166 r v p p r q q SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power T h e CY7B164 and 7B166 are high-per­ form ance BiCM O S static R A M s organized as 16,384 x 4 bits. Easy m em ory expansion

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A