785 SPICE Search Results
785 SPICE Datasheets Context Search
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Si4214DY
Abstract: 785 spice
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si4214dy18-jul-08785 spice | |
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Contextual Info: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F=2.1dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! |
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900mhzbfp180wq62702-f1500ot-343 | |
CTXIL671
Abstract: Video sync splitter lm lmh0387 xilinx HDMI verilog code hd-SDI splitter SOT23-5 i2c based pwm generator Mini DisplayPort cable hdmi SDI SP601 ml605 bom
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16-channelctxil671video sync splitter lmlmh0387 xilinx+7 | |
HDMI to SDI converter chip
Abstract: hd-SDI splitter HDMI verilog VHDL code for ADC and DAC SPI with FPGA hdmi CONVERTER SDI IC DVI VHDL sdi to hdmi converter ic Video sync splitter lm VHDL code for ADC and DAC SPI with FPGA spartan 3 CLC730146
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hdmi to sdi converter chiphd-sdi splitterhdmi verilogvhdl code for adc and dac spi with fpga+6 | |
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Contextual Info: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f j = 7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! |
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900mhzq62702-f1500bfp180wot-343+3 | |
BF295
Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
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start45019dbm42ghzot343+8 | |
BF 295
Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
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start45019dbm42ghzot343+9 | |
C785 transistor
Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
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start45019dbm42ghzot343+7 | |
ic 2648Contextual Info: BFP 180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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vps05605ot-343oct-12-1999ic 2648 | |
Q62702-F1500Contextual Info: BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type |
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900mhzot-343q62702-f1500dec-12-1996 | |
TRANSISTOR C 2577
Abstract: C 2577 transistor UHF transistor GHz B 1566 Transistor MBC964 transistor equivalent 1047 9016 transistor Transistor B 1566 TRANSISTOR C 3198 marking 28 SOT323 uhf
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prf957ot323mam062jul23+10 | |
BF 295
Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
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start45019dbm42ghzot343+10 | |
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Contextual Info: 2 CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features Description • Gain-Bandwidth Product fT) .>3GHz The CA3227 and CA3246 consist of five general purpose sil |
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ca3227ca3246100kh | |
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Contextual Info: BFP180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems pager at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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bfp180wvps05605ot343 | |
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IRL7YS1404CMContextual Info: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing |
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o-257aairl7ys1404cmhig925m-1994 | |
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Contextual Info: PD - 94676 HEXFET POWER MOSFET THRU-HOLE Low-ohmic TO-257AA IRL7YS1404CM 40V, N-CHANNEL Product Summary Part Number IRL7YS1404CM RDS(on) 0.007Ω BVDSS 40V ID 20A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing |
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o-257aairl7ys1404cm5m-1994 | |
lm 7804
Abstract: VdS 2093 2009 LM 1709 cn TA 7698 AP 1470 LM CLC730146 lm 7404 LM2670 SMD 6613 Rayson
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lmh0303/07lmh0384lmh0356lmh0307+15 | |
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Contextual Info: F-204 DIFFERENTIAL RESULTS ,- Impedance^ C o n n e c to r / 3.56E-08 3.56E-08 3.57E-08 T im e s | Diff Z (FullBW) Signal Rise Time Z Max Z Min H Diff Z (1 OOps) Diff Z (500ps) 30 ps 100 ps 500 ps 113.2 52 100.0 Q 102.3 Q 100.0 Q 100.7 Q |
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f-20456e-0857e-08500ps | |
oIR 503
Abstract: Tektronix schematic schottky transistor spice
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oir 503tektronix schematicschottky transistor spice | |
121bd
Abstract: SC 1139 DG 391ED400 152FP500 ALC10
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alc10121bdsc 1139 dg391ed400+1 | |
SC 1139 DG
Abstract: 121bd 391DF400 bc 407 lead info 561EH450 223ED040 101CC500 562CD063
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alc10sc 1139 dg121bd391df400+5 | |
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Contextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, +85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very |
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alc10 | |
121bdContextual Info: Snap-In Aluminum Electrolytic Capacitors ALC10 Series, 85ºC Overview Applications KEMET's ALC10 Series of snap-in capacitors covers a wide range of case sizes and voltage ratings. The ALC10 Series features high ripple current, surge voltage capability and very |
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alc10121bd | |
adc matlab code
Abstract: LMH7220 LMV243 ADC14155 DAC14135 DS90LV018A LMH6552 LMH6574 LMK02000 LMK03000C
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lmk03xxxadc matlab codelmh7220lmv243+7 | |